Modulation of curved graphene nanoribbon optical absorption spectra by an electric field

The optical absorption spectra of curved graphene nanoribbons exhibit rich dependence on the magnitude and direction of the electric field. The wave functions have spatial symmetry originating from the equivalence of the two sublattices. There exists an optical selection rule caused by the special structure of the Hamiltonian matrix and the wave function spatial symmetry. An electric field may or may not disrupt such spatial symmetry depending on its direction and magnitude. Therefore, the optical selection rule can be controlled. In addition, the two-fold degeneracy of the optical absorption peaks is lifted by the electric field, and the variations of the absorption peak energies with the field are explored.     

Field-induced spin-polarized electronic and optical properties of armchair stanene nanoribbons

Electronic and optical properties of armchair stanene nanoribbons are studied within the $s{p}^3$ tight-binding model including spin-orbit coupling in the presence of in-plane electric field. Electric field strongly modulates energy dispersions leading to a zero-gap transition, shift in edge-states, and exhibition of spin-splitting states. Then, the complex dielectric functions in the long wavelength limit is calculated from the gradient approximation. More field-induced transition channels exhibit richer optical spectra which further reveal spin-polarized feature at low frequency. Prominent plasmons in loss spectra come from π–σ mixing orbital. The plasmon peak frequency and height are tuned by field strength. Also, the threshold plasmon frequency linearly decreases as electric field increases and it vanishes at critical field. The reflectance exhibits oscillatory behaviors and shows dip structures with sharp plasmon edge, undergoing a red-shift with increasing field. The calculated results fully show that field-modulations of electronic and optical properties strongly depend on nanoribbon's geometry.     

The electronic properties and electron transport of sawtooth penta-graphene nanoribbon under uniaxial strain: ab-initio study

ABSTRACT

The electronic properties and electron transport of a sawtooth penta-graphene nanoribbon (SSPGNR) under uniaxial strains are theoretically studied by density-functional theory (DFT) in combination with the non-equilibrium Green's function formalism. We investigated the electronic structures and the current–voltage (I–V) characteristics of the SSPGNRs under a sequence of uniaxial strains in range from 10% compression to 10% stretch. In this strained range, carbon atoms still keep a pentagon network, but with the changing bond lengths. The C–C bond lengths change almost linearly with the tolerable strain. The value of the band gap of SSPGNRs can be depicted as a parabola under uniaxial strain. Our calculations show that the current is monotonous increase with compressive strain at the same applied bias voltage. In case of tensile strain, the variable rule of the current is different that it increases at first and decrease later. The fundamental physical properties (band structure, I–V characteristic) of SSPGNRs seem to be more sensitive to compressive strain than the stretch strain. The current intensity of the compressive-SSPGNR is by 2 orders of magnitude compared to that of the tensile-SSPGNR at the same strain in range from 6% to 10%. The results obtained from our calculations are beneficial to practical applications of these strained structures in SSPGNRs-based electromechanical devices.     

First-principles study on the electronic transport properties of M/SiC Schottky junctions (M=Ag,Au and Pd)

In this work, we investigate the electronic transport properties of M/SiC Schottky junctions (M=Ag, Au and Pd). The results show that the band structures of hydrogenated zigzag SiC nanoribbons (ZSiCNRs) and hydrogenated armchair SiC nanoribbons (ASiCNRs) are almost unaffected by their width changes. When the hydrogenated 7-ASiCNR is directly connected to the Ag, Au and Pd electrode, the transmission spectra of three metal-semiconductor junctions show that the Fermi level of metal is pinned to a fixed position in the semiconductor band gap of hydrogenated 7-ASiCNR. The nearly same rectifying current-voltage characteristics are found in three metal-semiconductor junctions. The average rectification ratios of three M/SiC Schottky junctions are all in the neighborhood of 10⁶. In other word, the M/SiC Schottky junction has remarkable application prospect as the candidate for Schottky Diode.     

Andreev reflection in a patterned graphene nanoribbon superconducting heterojunction

In the study, an improved superconducting heterojunction is made up of a zigzag graphene nanoribbon, which is patterned by a triangle and supports localized edge mode. Since all the localized edge modes stem from a pattern operation, the structure features of the pattern exert an enormous function on the coherent quantum transport. Especially, the patterned modes can enhance the Andreev reflection largely both in the ferromagnetic nanoribbon edge and the antiferromagnetic nanoribbon edge. The spin resolved zero bias conductances, in sharp contrast to its counterpart in the infinite width superconducting heterojunction, exhibit the different dependence on the patterned ferromagnetic interaction.     

三维氮掺杂碳纳米带的制备及其在锂硫电池中的应用

锂硫电池凭借其高的理论能量密度（2600 W·h·kg^-1）、丰富廉价的材料来源、且对环境友好等优势,而引起了人们的广泛关注.然而,锂硫电池活性物质导电性差、多硫化物易溶于有机电解液等问题所导致的硫正极倍率性能和循环稳定性差,仍然是困扰锂硫电池发展的挑战性难题.我们设计并以廉价易得的小分子化合物对苯二酚和甲醛为原料,通过缩聚反应、与氧化石墨烯原位复合、高温氮化制备了一类新型氮掺杂的碳纳米带固硫载体材料（NCNB-NG）.通过NCNB-NG复合纳米硫进一步得到的碳-硫复合正极材料（S@NCNB-NG）表现出更优异的倍率性能和循环稳定性,这主要得益于该碳质载体独特的微结构以及改善的导电性.     

B与N掺杂对单层石墨纳米带自旋极化输运的影响

通过第一性原理计算研究了具有锯齿状边沿并且具有反铁磁构型的单层石墨纳米带的自旋极化输运.研究发现,在中心散射区同一位置掺入单个B和N原子,尽管对整个体系磁矩的影响完全相同,但对两个自旋分量电流的影响却完全相反.掺B时,自旋向上的电流显著大于自旋向下的电流;而掺N时,自旋向下的电流显著大于自旋向上的电流.这是由于不管掺B还是掺N都将打破自旋简并,使得导带和价带中自旋向上的能级比自旋向下的能级更高.掺B引入空穴,使完全占据的价带变为部分占据,从而自旋向上的能级正好处于费米能级,使得电子透射能力更强、电流更大,而自旋向下的能级则离费米能级较远使电子透射的能力较弱.掺N则引入电子,使得原来全空的导带变为部分占据,从而费米能级穿过导带中自旋向下的能级,使得自旋向下的电子比自旋向上的电子透射能力更强. 关键词： 自旋极化输运 单层石墨纳米带 第一性原理 非平衡格林函数     

A biosensor based on graphene nanoribbon with nanopores: a first-principles devices-design

A biosensor device,built from graphene nanoribbons(GNRs) with nanopores,was designed and studied by firstprinciples quantum transport simulation.We have demonstrated the intrinsic transport properties of the device and the effect of different nucleobases on device properties when they are located in the nanopores of GNRs.It was found that the device’s current changes remarkably with the species of nucleobases,which originates from their different chemical compositions and coupling strengths with GNRs.In addition,our first-principles results clearly reveal that the distinguished ability of a device’s current depends on the position of the pore to some extent.These results may present a new way to read off the nucleobases sequence of a single-stranded DNA(ssDNA) molecule by such GNRs-based device with designed nanopores