Fluorinated Eu‐Doped SnO2 Nanostructures with Simultaneous Phase and Shape Control and Improved Photoluminescence

Fluorinated Eu‐doped SnO₂ nanostructures with tunable morphology (shuttle‐like and ring‐like) are prepared by a hydrothermal method, using NaF as the morphology controlling agent. X‐ray diffraction, field‐emission scanning electron microscopy, high‐resolution transmission electron microscopy, X‐ray photoelectron spectroscopy, and energy dispersive spectroscopy are used to characterize their phase, shape, lattice structure, composition, and element distribution. The data suggest that Eu³⁺ ions are uniformly embedded into SnO₂ nanocrystallites either through substitution of Sn⁴⁺ ions or through formation of Eu‐F bonds, allowing for high‐level Eu³⁺ doping. Photoluminescence features such as transition intensity ratios and Stark splitting indicate diverse localization of Eu³⁺ ions in the SnO₂ nanoparticles, either in the crystalline lattice or in the grain boundaries. Due to formation of Eu‐F and Sn‐F bonds, the fluorinated surface of SnO₂ nanocrystallites efficiently inhibits the hydroxyl quenching effect, which accounts for their improved photoluminescence intensity.     

Sb，In，P掺杂对SnO2薄膜透明导电性能的影响

采用溶胶凝胶（Sol-Gel）技术制备了SnO2：（Sb，In）透明导电薄膜，优化了制备工艺参数，获得了最佳制备条件．研究表明，4％的铟掺杂有效地改善了薄膜的内部结构，使得紫外-可见光的透过率显著增加；7％的锑掺杂释放出了更多的栽流子，使薄膜的方块电阻降低，2％的磷掺杂因准连续杂质能带的形成进一步提高了薄膜的电导率．Sb、In、P的掺入使得SnO2薄膜的紫外-可见光的透过率达83％，方块电阻达38Ω。     

Study of the Selectivity of SnO2 Supported Membranes Prepared by a Sol-Gel Route

In this work the sol-gel process was used to prepare SnO2 supported membranes with an average pore size of 2.5 nm. The effects of salt concentration (NaCl or CaCl2) and of the pH of the aqueous solutions used on the flux and selectivity through the SnO2 membrane were analyzed by permeation experiments and the results interpreted taking account of the zeta potential values determined from the electrophoretic mobility of the SnO2 powder aqueous dispersion. The results show that the ion flux (Na+, Ca2+ and Cl–) throughout the membrane is determined by the electrostatic repulsion among these species and the surface charge at the tin oxide-solution interface.     

一种新颖的涂层光纤传感器

作者提出一种新型的涂层光纤传感器,传感头是在裸光纤外周涂以SnO₂薄层。理论推知,它对还原性液体敏感。对甲醇溶液浓度进行测量的结果与理论预期相符。测量范围为0～90%体积浓度。分辨率为1.3%体积浓度。     

铝电解质中二氧化锡的光谱测定

本文探讨了发射光谱法测定铝电解质中二氧化锡。粉末试样不需溶样，人工合成标准系列，消除了组织结构对测定的影响，对缓冲剂、内标、电极形状及摄谱条件作了最佳选择，ＲＳＤ为５．９％，加标回收率为１００．９％，与国外ＸＲＦ结果十分吻合。     

B-N共掺杂改善p型ZnO的理论分析

采用基于密度泛函理论的第一性原理赝势法对B缺陷在ZnO中的存在形式进行了理论分析,对B-N共掺杂ZnO体系的晶格结构、杂质形成能、杂质态密度及电子结构进行了系统的研究.研究表明,B缺陷在掺杂体系中主要以BZn的形式存在,这种结构会引起相应的晶格收缩;研究发现与以往的N掺杂相比,共掺结构具有更低的杂质形成能和更高的化学稳定性,因此更加适合掺杂.此外,共掺能够形成更低的受主能级,因而减小了受主的杂质电离能,提高了受主态密度;研究显示共掺结构下的杂质N原子与体相Zn原子之间的键合能力提高,受主原子得电子的能力增强,因此B-N共掺有望成为一种更为有效的p型掺杂手段.     

Li,N双受主共掺杂实现p型ZnO的第一性原理研究

基于密度泛函理论,采用第一性原理平面波超软赝势法,首先对六方纤锌矿结构的ZnO晶体和N,Li分别掺杂ZnO以及Li-N共掺杂ZnO晶体的几何结构分别进行了优化计算,在此基础上计算得到了未掺杂ZnO晶体和不同掺杂情况下ZnO晶体的能带结构、总体态密度、分波态密度和电荷布居数.利用计算的结果,从理论上分析了Li-N共掺杂ZnO更容易得到稳定的p型ZnO. 关键词： ZnO 电子结构 第一性原理 p型共掺杂     

Ag-N共掺p型ZnO的第一性原理研究

采用基于密度泛函理论的第一性原理赝势法对Ag-N共掺杂ZnO体 系以及间隙N和间隙H掺杂p型ZnO: (Ag, N)体系的缺陷形成能和离化能进行了研究. 结果表明, 在Ag_Zn和N_O所形成的众多受主复合体中, Ag_Zn-N_O受主对不仅具有较低的缺陷形成能同时其离化能也相对较小, 因此, Ag_Zn-N_O受主对的形成是Ag-N共掺ZnO体系实现p型导电的主要原因. 研究发现, 当ZnO: (Ag, N)体系有额外间隙N原子存在时, Ag_Zn-N_O受主对容易与N_i形成Ag_Zn-(N₂)_{m O}施主型缺陷, 该施主缺陷的形成降低了Ag-N共掺ZnO的掺杂效率因而不利于p型导电. 当间隙H引入到ZnO: (Ag, N)体系时, H_i易与Ag_Zn-N_O受主对形成 受主-施主-受主复合结构(Ag_Zn-H_i-N_O), 此复合体的形成不仅提高了Ag_Zn-N_O受主对在ZnO中的固溶度, 同时还能使其受主能级变得更浅而有利于p型导电. 因此, H辅助Ag-N共掺ZnO可能是一种有效的p型掺杂手段. 关键词： p型ZnO 缺陷形成能 受主离化能 第一性原理     

纳米SnO2高效催化烯烃与H2O2环氧化反应研究

构建了用于催化烯烃与过氧化氢环氧化反应的高效、 绿色催化反应体系. 首先, 通过水热合成法制备了纳米SnO₂, 并在320 ℃下煅烧. 随后, 对所有催化剂进行X射线衍射(XRD)、 紫外-可见漫反射光谱(UV-Vis)、 傅里叶变换红外光谱(FTIR)、 扫描电子显微镜(SEM)和透射电子显微镜(TEM)表征. 进一步将催化剂用于以H₂O₂水溶液为氧化剂环氧化各种官能化烯烃(包括环烯烃, 苯乙烯和直链烯烃)的反应, 以高转化率和高选择性得到了环氧化物. 在相似的反应条件下, 发现合成的纳米SnO₂-170催化剂在催化1-甲基环己烯与H₂O₂的环氧化反应中的活性最佳, 在2 h内1-甲基环己烯的转化率达到100%, 环氧化物选择性达到100%.     

Well Dispersed SnO2 Nanoclusters Preparation and Modulation of Metal-Insulator Transition Induced by Ionic Liquid

Tin dioxide (SnO₂) has attracted broad interest due to its particular gas-sensor property. Nano- or atom-scale SnO₂ material has always been the aim in order to ultimately improve the sensitivity. However, until now, it remains difficult to synthesize SnO₂ nanoclusters by using traditional methods. In the present work, we have achieved the preparation of SnO₂ nanoclusters by using the cluster beam deposition technique. The obtained nanoclusters were well characterized by high resolution transmission electron microscope HR-TEM. Results indicated the formation of the well-dispersed SnO₂ nanoclusters with uniform size distribution (5-7 nm). Furthermore, an obvious metal insulator transition was observed by gating with ionic liquid. Combined with theory calculation, the corresponding mechanism was systematically analyzed from oxygen vacancy induced electron doping.