Hemin Modified SnO2 Films on ITO‐PET with Enhanced Activity for Electrochemical Sensing

We present a simple and efficient method for the preparation of hemin‐modified SnO₂ films on low cost, flexible, conducting ITO‐PET substrates to enable the development of a sensitive electrochemical sensor for the determination of H₂O₂. Using a hydrothermal processing method meant that the SnO₂ films can be prepared at low temperatures, compatible with the PET substrate. The properties of the electrodes enable a high hemin loading to be achieved in a stable and functional way, allowing the direct reduction and oxidation of the immobilized hemin and maintaining its high electrocatalytic activity in the reduction of H₂O₂ on the surface. The results showed a sensitive response linearly proportional to the concentration of H₂O₂ in the range 1.5 to 90 μM.     

通过交替生长气氛调控N掺杂ZnO薄膜电学特性

使用分子束外延方法在c面蓝宝石衬底上生长了系列氮掺杂ZnO薄膜样品。在连续的富锌气氛环境中生长的样品,由于存在大量的施主缺陷,呈现n型电导。为了抑制施主缺陷带来的补偿效应,在生长过程中,通过周期性补充氧气,形成周期性的富氧气氛,缓解了氮掺杂浓度和施主缺陷浓度之间的矛盾。光致发光测量表明,通过交替生长气氛,氧空位和锌间隙等缺陷在薄膜中得到了显著抑制。通过交替生长气氛生长的外延薄膜的结晶质量也有所提高。样品显示出重复性较高的p型电导,载流子浓度可达到10¹⁶ cm^-3。周期性补氧调节生长气氛的生长方式是一种有效实现p型掺杂ZnO的方法。     

Dispersing SnO2 nanocrystals in amorphous carbon as a cyclic durable anode material for lithium ion batteries

We demonstrate a facile route for the massive production of SnCb/carbon nanocomposite used as high-capacity anode materials of nextgeneration lithium-ion batteries.The nanocomposite had a unique structure of ultrafine SnO2 nanocrystals（5 nm,80 wt%） homogeneously dispersed in amorphous carbon matrix.This structure design can well accommodate the volume change of Li＋ insertion/desertion in SnO2,and prevent the aggregation of the nanosized active materials during cycling,leading to superior cycle performance with stable reversible capacity of 400 mAh/g at a high current rate of 3.3 A/g.     

光纤传感材料SnO2的气敏光反射特性研究

作者研究了二氧化锡的气敏光反射特性,测量了它在乙醇,氨,丙酮气体中的浓度与气敏反射光谱关系,发现它对氨气的气敏光谱波长灵敏范围最大,而且不同波长有不同的灵敏度。解释SnO₂气敏光反射机理。     

常压MOCVD法生长的p型ZnSe及其光电特性

本文通过常压MOCVD方法,利用NH₃气作为受主掺杂源,在(100)方向的GaAs衬底上生长了ZnSe:N膜。通过测量77K温度下光致发光光谱。观测到了由于掺氮引起的自由到束缚发射(FA)和深中心复合(SA).在低掺杂浓度下FA起主要作用,随着NH₃气浓度增加,FA和SA带的强度随之增强,在重掺杂下SA带成为主要,同时带的半宽度展宽。室温下霍尔测量的结果表明。低掺杂浓度下ZnSe:N膜呈高阻态,而在高掺杂浓度下外延膜呈现P型电导,载流子浓度P～1016cm³.利用p-ZnSe/n-GaAs构成异质pn结,观测到了二极管的整流特性,进一步证实p型ZnSe的实现。     

射频磁控溅射法制备SnO2:Sb薄膜的结构和光致发光性质研究

采用射频磁控溅射法在玻璃衬底上制备出锑掺杂的氧化锡（SnO2₂:Sb）薄膜.制 备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄，晶粒生长的择优取向为［110］.室温下光致发光测量结果表明，在392nm附近存在强的紫外-紫光发射.研究了不同氧分压对薄膜结构及发光性质的影响，并对SnO2₂:Sb的光致发光机制进行了探索性研究.     

透明导电Cd2SnO4薄膜的光学特性研究

报道了射频反应性溅射Cd-Sn合金靶沉积的Cd_2SnO_4(简称CTO)薄膜在0.2～6.0μm波长范围内的透射和反射谱及其光致发光谱的测量结果,并由此对CTO膜光学性质进行了较详细的理论分析和讨论.     

Influence of the Heating Rate on the Microstructure and on Macroscopic Properties of Sol-Gel SnO2 : Sb Coatings

Sol-gel dip-coated films of transparent conducting antimony-doped tin oxide (SnO2 : Sb) have been heat treated with heating rates varying from 0.2 to 4300 K/s using either a furnace or cw CO2 laser irradiation. The final sintering temperature of 540°C was maintained for up to 15 min. The sheet resistance of the coatings decreases with increasing heating rate. A decrease of the sheet resistance with the sintering time at constant temperature can be observed for low heating rates but the final values are higher than those obtained with higher heating rates. It is assumed that the densification of the coatings is determined by a competition between the nucleation at low temperatures and the growth of the crystallites at high temperatures. The microstructure of the coatings has been investigated by high resolution TEM cross-sections, X-ray diffraction, and Rutherford back scattering (RBS) and has been correlated to the resulting electrical properties measured by 4 point technique. Different mechanisms of heating arise with the furnace and the cw CO2 laser.