CuI/Al双层电极的有机场效应晶体管

制备了CuI/Al为源极和漏电极的并五苯基场效应晶体管.相对于纯金属(Al, Au)电极的晶体管,所研制的晶体管的迁移率、阈值电压VT、开关电流比I_on/I_off等参数都有明显改善.研究发现,在Al电极与并五苯半导体之间引入CuI作为空穴注入层,能够明显降低Al电极与并五苯之间的空穴注入势垒.紫外-可见光谱和X射线光电子能谱数据表明,这种空穴注入势垒的降低源自并五苯和Al向CuI的电子转移. 关键词： 有机场效应晶体管 CuI/Al双层源漏电极 电子转移     

Hysteresis suppression improvement of polycrystalline silicon thin-film transistors by two-step hydrogenation

The effect of two-step hydrogenation, consisting of plasma hydrogenation and annealing in hydrogen, on the hysteresis phenomenon of metal-induced unilaterally crystallized silicon thin-film transistors (MIUC-Si TFTs) was investigated. The large hysteresis level of the conventional MIUC-Si TFTs caused a wide variation of the drain current with the previous gate voltage. As the plasma exposure time increased, the plasma hydrogenation commonly used for stability in poly-Si TFTs was found to increase the hysteresis level of MIUC-Si TFTs after a minimum point. This is because plasma-induced damages correlated with unique defects of MIUC-Si such as metal-related weak bonds, are accompanied by passivation. The following annealing repaired the damages. Consequently the hysteresis level was lower, which resulted in a narrower variation of the drain current.     

The effect of modified layers on the performance of inverted ZnO nanorods/MEH-PPV solar cells

We fabricate inverted organic/inorganic hybrid solar cells based on vertically oriented ZnO nanorods and polymer MEH-PPV. The morphology of ZnO nanorods and ZnO nanorods/MEH-PPV hybrid structure is depicted by using scanning electron microscopy (SEM), X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It is observed that ZnO nanorods array grows primarily aligned along the perpendicular direction of the ITO substrate. The MEH-PPV molecule does not enter the interspace between ZnO nano...     

3-methyl-4-metroxy-4'-nitrostilbene (MMONS) Crystal Growth and Studies of It

３－ｍｅｔｈｙｌ－４－ｍｅｔｒｏｘｙ－４＇－ｎｉｔｒｏｓｔｉｌｂｅｎｅ（ＭＭＯＮＳ）ＣｒｙｓｔａｌＧｒｏｗｔｈａｎｄＳｔｕｄｉｅｓｏｆＩｔｓＳｅｃｏｎｄＮｏｎｌｉｎｅａｒＯｐｔｉｃａｌＰｒｏｐｅｒｔｉｅｓ￥ＣＡＯＹａｎｇ；ＺＨＵＺｈｉｄｏｎｇ；ＨＵＡ...     

有机层界面对双层有机发光二极管复合效率的影响

建立了双层有机发光二极管中载流子在有机层界面复合的无序跳跃理论模型.由于有机分子材料的空间及能带结构的无序性，采用刚体模型处理有机层界面问题是不恰当的，而采用无序跳跃模型比较合理.复合效率及复合电流由载流子跳跃距离、有机层界面的有效势垒高度及该界面处的电场强度分布所决定：在双层器件ITO/α-NPD/Alq₃/Al中，当所加电压小于19.5V时，复合效率随着载流子跳跃距离的增加而增加，而大于19.5V时，复合效率随着其距离的增加而减少；复合效率随着有机层界面有效势垒高度的增加而增加； 关键词： 有机层界面 双层有机发光二极管 复合效率 有效势垒高度 无序跳跃模型     

有机发光器件的磁电导效应

制备了基于三(8-羟基喹啉)铝(tris-(8-hydroxyquinoline) aluminum (III), Alq₃) 的有机发光二极管, 并在不同偏压下测量了器件的室温磁电导效应.在小偏压下, 发光器件展示出明显的负磁电导效应.偏压增加后, 磁电导由负值变为正值, 出现了正负转变的现象. N, N'-二苯基-N, N'-(1-萘基)-1, 1'-联苯-4, 4'-二胺(N, N′-Di(naphthalen-1-yl)-N, N′ diphenyl-benzidine, NPB) 与铜酞菁 (Copper phthalocyanine, CuPc) 单极器件磁电导的测量结果表明, 发光器件在小偏压下的负磁电导效应来源于器件中的CuPc层. 双极电流的磁电导效应可用电子-空穴对模型进行解释, 而单极电流的磁电导效应可归因于器件中的极化子-双极化子转变. 在注入电流的变化过程中, 发光器件的正负磁电导转变是两种机理共同作用的结果.     

Influence of polymer dielectric surface energy on thin‐film transistor performance of solution‐processed triethylsilylethynyl anthradithiophene (TES‐ADT)

This study investigates the correlation between surface energy of polymer dielectrics and the film morphology, microstructure, and thin‐film transistor performance of solution‐processed 5,11‐bis(triethylsilylethynyl) anthradithiophene (TES‐ADT) films. The low surface energy polyimide (PI) dielectric induced large grains with strong X‐ray reflections for spin‐cast TES‐ADT films in comparison to high surface en‐ ergy poly(4‐vinyl phenol) (PVP) dielectric. Furthermore, thin‐film transistors based on spin‐cast TES‐ADT films on PI dielectric exhibited enhanced electrical performance, small hysteresis, and high stability under bias stress with carrier mobility as high as 0.43 cm²/Vs and a current on/off ratio of 10⁷. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The solid–liquid interface energy of organic crystals

A simple thermodynamic model, originally developed for metals based on the Gibbs–Thomson equation and related considerations for homogeneous nucleation, has been extended to predict the solid–liquid interface energy γ_sl of organic crystals. The model predictions correspond to available experimental and other theoretical results for 38 organic crystals. Copyright © 2007 John Wiley & Sons, Ltd.     

The effect of ITO films thickness on the properties of flexible organic light emitting diode

Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.     

Dielectric properties of ferroelectric diisopropylammonium iodide

Temperature dependences of dielectric constant, amplitude of the third harmonic and heat capacity for the organic ferroelectric of diisopropylammonium iodide (C₆H₁₆NI) have been investigated. The measurements were carried out through heating and cooling cycles in the range of 300–400?K. It was found that upon the first heating, only one phase transition occurred without the presence of the ferroelectric phase. For samples preheated over 420?K, two phase transitions at 363 and 378?K appeared in the heating process, and the ferroelectric state was also observed between them. Upon cooling, the ferroelectric phase was detected in the range of lower 361?K and persisted up to room temperature.