用板式电势差计测量电池的电动势和内阻实验的改进

分析了在“用板式电势差计测量电池的电动势和内阻”实验中 ,由于待测干电池的电动势和内阻在实验过程中均不为恒定值而引起的误差 ,依据电化学理论和电阻构成解释了实验现象 ,并给出了实验改进方案 .     

The analysis of volatile trace compounds in landfill gases,compost heaps and forest air

Landfill gas, cryotrapped on a loop fashioned from a length of a capillary gas chromatography (GC) column, was examined for volatile organometallic compounds (VOMCs) and for volatile organic compounds (VOCs) by using GC–mass spectrometry (MS). A large number of organic components were present and many were identified, but the only VOMCs present in high enough concentrations to be detected were trimethylstibine and tetramethyltin. The use of inductively coupled plasma (ICP)‐MS as an element‐specific detector allowed the identification of a number of other organometallic species in the landfill gas, including trimethylarsine and trimethylbismuth, and, for the first time, butyltrimethyltin and dibutyldimethyltin. The presence of molybdenum hexacarbonyl was confirmed. Gas from a large‐scale compost heap and from compost incubated in the laboratory contained iodomethane but no common VOMCs (GC–ICP‐MS). Only VOCs were present in forest air (GC–MS). Copyright © 2003 John Wiley & Sons, Ltd.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

Laser spectroscopic investigation of a new precursor-type polyparaphenylenevinylene

Optical, structural and morphological properties of thin films of polyparaphenylenevinylene (PPV) formed by an alkyl sulfinyl precursor route have been studied. Thin films were fabricated on an optical glass and on quartz glass either by spin-coating of the precursor solution or by layer-by-layer deposition using Langmuir–Blodgett technique. PPV precursor films were also spin-coated on gold-coated glass in order to study thin-film optical parameters by surface plasmon spectroscopy. We have been successful in forming about 40 precursor mono layers on quartz glass by Langmuir–Blodgett technique using optimized surface pressure and dipping conditions. After thermal conversion of the precursor layers good quality fluorescent PPV films of yellow colour have been obtained. Optical characterization of the films was carried out by linear absorption and emission spectroscopy, ellipsometry, and surface plasmon spectroscopy. Structural and morphological studies on the thin films were carried out by using X-ray scattering and atomic force microscopy. Wave-guided travelling-wave laser action has been achieved in a PPV film on quartz glass. The sample was transversally pumped with picosecond laser pulses (wavelength 347.15 nm, duration 35 ps). Laser emission occurred at 550 nm for pump pulse energy densities above .     

FeCoB-SiO2磁性纳米颗粒膜的微波电磁特性

采用交替沉积磁控溅射工艺制备了超薄多层的FeCoB SiO2 磁性纳米颗粒膜 .利用x射线衍射仪、扫描探针显微镜、透射电子显微镜分析了薄膜的微结构和形貌特征 .采用振动样品磁强计、四探针法、微波矢量分析仪及谐振腔法测量薄膜试样的磁电性能和微波复磁导率 .重点对SiO2 介质相含量、薄膜微结构对电磁性能产生重要影响的机理做了分析和探讨 .结果表明 :这类FeCoB SiO2 磁性纳米颗粒膜具有良好的软磁性能和高频电磁性能 ,2GHz时的磁导率 μ′高于 70 ,可以应用于高频微磁器件或微波吸收材料的设计     

红光激发下掺Ho3+氟化物薄膜的上转换发光

利用激光脉冲沉淀法制备了稀土Ho~(3 )掺杂的氟化物薄膜。观测到处于薄膜中的Ho~(3 )离子在632.8nm红光激发下的上转换发射。这些上转换发射包括:~5S_2→~5I_7,~5F_4→~5I_7和~5S_2→~5I_8。     

热丝加热电流对CH薄膜沉积速率和表面形貌的影响

 热丝辅助裂解法是结合气相沉积制备聚对二甲苯薄膜和热丝化学气相沉积而形成的一种制-CH薄膜的新方法。热丝辅助裂解法的最大特点就是在保持低衬底温度情况下可以获得高沉积速率，而热丝加热电流对薄膜沉积速率和薄膜表面形貌具有重要影响。研究表明，热丝加热电流越大，薄膜沉积速率越高，在加热电流9A时，薄膜沉积速率可达0.002mm/min，同时薄膜表面粗糙度随之增加，薄膜表面也开始出现其它元素污染，因此，一般热丝加热电流选择为7A附近。     

短脉冲强激光在稀薄等离子体中传播时的电磁类孤立子

 采用二维粒子模拟方法，研究了短脉冲强激光在稀薄等离子体中传播时电磁类孤立子的产生和时空演化过程。通过分析电磁场与等离子体波的非线性能量交换和激光场的频率谱结构等，给出了电磁类孤立子形成的基本物理图像，讨论了等离子体参数对电磁类孤立子形成的影响。模拟结果表明：类孤立子的形成是由于局部电磁波振荡频率减小至等离子体频率引起的，初始等离子体密度越高越容易形成空间局域结构。     

FTIR measurements of CO2 line positions and intensities at high temperature in the 3700-3750 cm spectral region

Positions and intensities for 453 spectral lines in 12 rovibrational bands of ¹²C¹⁶O₂ have been determined between 3700 and 3750 cm⁻¹. At three temperatures (294, 500, and 698 K) eight spectra have been recorded at a pressure around 5 mbar and for an absorption path of about 190 cm⁻¹ using a Bomen DA3 Fourier transform spectrometer (4 × 10⁻³ cm⁻¹ resolution). Some of the measured positions and intensities can be compared with recent experimental results that validate the experimental set-up and the data analysis procedure. The results are also compared with the values listed in the HITRAN 2000 database. If the agreement is generally good, discrepancies are observed for three hot bands.