金属UV光敏薄膜的实验研究

介绍了金属Au和Al薄膜的制备方法，研究了其UV光电发射特性，并做了寿命实验。给出了在真空中以及放在大气中光电发射衰减的情况。指出了其在大气中达到一个稳定值之后，再反复多次暴露于干燥大气时仍存在一个稳定光电发射周期的特点，可长达数月。金属薄膜有一个最佳膜层厚度，这与光电发射逸出深度、膜层结构等密切相关。近年来光电子成像器件发展非常迅速，急需光电发射均匀的面电子源，因此在微通道板的特性测试和像管的动态模拟中，Au和Al金属薄膜成为被优选的对象。     

Cu-MgF2复合纳米金属陶瓷薄膜的电导特性研究

用射频磁控共溅射法制备了Cu体积分数分别为 10 % ,15 % ,2 0 %和 3 0 %的Cu MgF2 复合金属陶瓷薄膜 .用x射线衍射、x射线光电子能谱和变温四引线技术对薄膜的微结构、组分及电导特性进行了测试分析 .微结构分析表明 :制备的Cu MgF2 复合薄膜由fcc Cu晶态纳米微粒镶嵌于主要为非晶态的MgF2 陶瓷基体中构成 ,Cu晶粒的平均晶粒尺寸随组分增加从 11 9nm增至 17 8nm .5 0— 3 0 0K温度范围内的电导测试结果表明 :当Cu体积分数qM 由 15 %增加到 2 0 %时 ,Cu MgF2 复合薄膜的电阻减小了 8个量级 ,得出制备的复合薄膜渗透阈qCM 应处于 15 %和 2 0 %之间 .qM 在 10 %和 15 %之间的薄膜呈介质导电状态 ,而在 2 0 %和 3 0 %之间的薄膜则呈金属导电状态 .从理论上讨论了复合薄膜中杂质电导和本征电导的激活能及其对电导的贡献 ,并讨论了Cu MgF2 复合纳米金属陶瓷薄膜的渗透阈 ,得到了和实验一致的结果     

60keV质子辐照对TiNi记忆合金薄膜马氏体相变的影响

 利用磁控溅射的方法在氧化后的单晶Si基片上制备了TiNi形状记忆合金薄膜，利用示差扫描量热法和原位X射线衍射研究了薄膜的马氏体相变特征。通过60keV质子注入（辐照）薄膜样品研究了H+离子对合金薄膜马氏体相变特征的影响，结果表明氢离子注入后引起了马氏体相变开始Ms和结束点Mf以及逆马氏体相变开始As和结束温度Af的下降，而对R相变开始Rs和结束温度Rf影响不大。掠入射X射线衍射表明H+离子注入后有氢化物形成。H⁺离子注入形成的氢化物是引起相变点的变化的主要因素。     

超分子有机薄膜

利用超分子有机薄膜技术能制成新的传感分子电子器件、光学器件和生物分子器件等，受到跨学科高技术研究领域的重视。本文描述了超分子有机薄膜的制备方法以及在各应用领域的研究状况。重点介绍了我们研究组在近20年工作中，利用LB膜技术，在光电器件、气体传感技术和光学非线性，特别是在生物传感技术方面的研究成果。按照生物体系提供的信息，模拟合成功能分子，建造有组织的分子组装体，以便用来研究依赖于分子排列的生物物理化学效应。     

Micromechanisms and Mechanics of Damage and Fracture in Thin Film/Substrate Systems

The purpose of this paper is to review the mechanisms and available theoretical methods for modeling the strength and failure of thin film/substrate systems     

光电变色器件用纳米晶氧化钛薄膜的微结构与特性

纳米晶TiO2薄膜在光电变色器件中具有很重要的作用。它的微结构直接影响染料的吸附、光的散射以及电荷输运的特性。因此，探索TiO2薄膜的微结构(如粒径、表面形貌和厚度等)及光电性能是非常有意义的。采用电子束蒸发工艺制备了光电变色器件用纳晶TiO2薄膜，利用原子力显微镜、X射线衍射、俄歇电子能谱等手段对纳米晶TiO2薄膜的表面形貌、结晶状态及组分进行了分析。从理论上研究和讨论了纳米晶TiO2薄膜晶粒尺寸对光电性能的影响，并用量子限制效应解释了吸收光谱峰值波长随粒径减小而发生蓝移的现象。     

Novel optical film sensor design based on p-polarized reflectance

A new scheme of optical film sensor is presented. The sensor is based on p-polarized reflectance, consisting of a sensing coated substrate, is easily optimized for maximum sensitivity in different applications. The resolutions of refractive index n_f, extinction coefficient k_f and thickness h_f of the sensitive films are predicted to be 10⁻⁷, 10⁻⁵ and 10⁻³ nm, respectively. Experimentally, we selected the sol–gel derived SnO₂ films as gas-sensitive films and conducted preliminary gas-sensing test. The results indicate that novel optical film sensor scheme has higher sensitivity, and the detection sensitivity is available to 10⁻¹ ppm on the condition of optimum optical parameters and incident angle.     

Morphology and spectral properties of thin films of benzoxazole derivatives of biphenyl

We have studied the spectral properties and morphology of thin films (TVD films) formed by thermal vacuum deposition of 4,4′-bis[(E)-1-(1,3-benzoxazol-2-yl)-2-ethenyl]-1,1′-biphenyl and its substituted derivatives. We have shown that introducing bulky 2,2′-oxyhexyl substituents into the biphenyl units leads to a shift of the fluorescence maximum for the TVD films toward shorter wavelengths, a decrease in their photostability, and aggregation of the films during storage. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 3, pp. 300–303, May–June, 2007.     

Degradation process in organic thin film devices fabricated using P3HT

The stability of regioregular poly(3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes have been investigated under normal environmental conditions (25°C and RH∼45–50%). Electrical and optical properties of ITO/P3HT/Al devices have been studied over a period of 30 days. Mobility μ of the order of 10⁻⁴ cm²/V-s has been obtained from the V ² law in the as-deposited P3HT films. Scanning electron microscopy (SEM) investigations show blistering of Al contacts in devices with a poly(3,4-ethylenedioxythiophene) (PEDOT) interlayer on application of voltage whereas no blistering is seen in devices without PEDOT. The results have been explained in terms of trap generation and propagation and the moisture-absorbing nature of PEDOT.      

酞菁钴薄膜的折射率及吸收特性

通过真空镀法在单晶硅片上制备了酞菁钴薄膜，在波长扫描和入射角可变全自动椭圆偏振光谱仪上研究了ＣｏＰｃ薄膜的椭偏光谱并分析了其电子结构。