Thiolated cyclodextrin self-assembled monolayer-like characterized with secondary ion mass spectrometry

In the work the focus is on the preparation of self-assembled monolayer-like films consisting of thiolated cyclodextrin on gold substrate and a characterization by using secondary ion mass spectrometry. The short (1 min) and long (1 h) time preparations of self-assembled monolayer-like films, resulting in submonolayer and monolayer regimes, are investigated, respectively. The observed species of thiolated cyclodextrin (M as molecular ion) self-assembled monolayer-like films are assigned to three groups: Au_xH_yS_z clusters, fragments with origin in cyclodextrin molecule associated with Au, and molecular ions. The group of Au_xH_yS_z (x = 2-17, y = 0-2, z = 1-5) clusters have higher intensities than other species in the positive and even more in negative mass spectra. Interestingly, the dependence between the number of Au and S atoms shows that with the increasing size of Au_xH_yS_z clusters up to 11 Au atoms, the number of associated S atoms is also increasing and then decreasing. Molecular species as (M−S+H)Na⁺, (M+H)Na⁺, AuMNa⁺, (M₂−S)Na⁺, and M₂Na⁺ are determined, and also in cationized forms with K⁺. The intensities of thiolated cyclodextrin fragments at the long time preparation are approximately 10 times higher than the intensities of the same fragments observed at the short time. The largest observed ions in thiolated cyclodextrin self-assembled monolayer-like films are AuM₂ and Au₂M. The thiolated cyclodextrin molecular ions are compared with hexadecanethiol molecular ions in the form of Au_xM_w where the values of x and w are smaller for thiolated cyclodextrin than for hexadecanethiol. This result is supported with larger, more compact, and more stabile thiolated cyclodextrin molecule.     

Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

The effect of oxygen plasma treatment on the performance of GaN Schottky barrier diodes is studied. The GaN surface is intentionally exposed to oxygen plasma generated in an inductively coupled plasma etching system before Schottky metal deposition. The reverse leakage current of the treated diodes is suppressed in low bias range with enhanced diode ideality factor and series resistance. However, in high bias range the treated diodes exhibit higher reverse leakage current and corresponding lower breakdown voltage. The X-ray photoelectron spectroscopy analysis reveals the growth of a thin GaO_x layer on GaN surface during oxygen plasma treatment. Under sub-bandgap light illumination, the plasma-treated diodes show larger photovoltaic response compared with that of untreated diodes, suggesting that additional defect states at GaN surface are induced by the oxygen plasma treatment.     

Photocatalytic performance of ZnO:Fe array films under sunlight irradiation

ZnO:Fe array thin films were prepared by the hydrothermal method using the sol-gel grown film as a seed layer. The samples were characterized by X-ray diffraction (XRD), ultraviolet/visible absorption spectra (UV-vis) and scanning electron microscopy (SEM). The photocatalytic activities of the prepared samples were investigated for the photodegradation of methylene blue (MB) under sunlight irradiation. The results show that the lattice constant a and the cell volume of ZnO:Fe film increase due to the substitution of Fe for Zn. The absorption edge of Fe-doped ZnO displays a red shift with a significant absorption between 600 and 700 nm. The ZnO:Fe array film is composed of disk particles with uniformity and compactness. Doping Fe ions enhances the photodegradation rate of ZnO array film for MB. 1.5% Fe doped ZnO sample exhibits the highest activity under irradiation time of 4 h. Its degradation rate increases about 1.6 times compared to the undoped ZnO.     

可用于钕玻璃激光系统的自锁模飞秒激光器

描述了用激光二极管抽运的全固体Ｎｄ：ＬＭＡ自锁模飞秒激光振荡器,通过理论计算和分析,在其腔内加入－非线性系数较大的介质,同时对腔结构进行优化设计,实现了自锁模。它直接产生波长为１０５４ｎｍ的激光,输出激光脉冲的宽度达６１０ｆｓ,光谱宽度为２．１ｎｍ,输出功率达１５ｍＷ。     

利用APPLEⅡ机实现谱板的自动化测量

采用APPLEⅡ微机控制9W测微光密度计,实现对谱板自动化测量。论述了该系统的工作原理、主要功能和特性。给出了使用该系统所测得的实际光谱谱图。     

Photoinduced non-linear optical diagnostic of SiNxOy/Si111 interfaces

Anisotropic (elliptically polarized) photoinduced second harmonic generation (PISHG) in SiN_xO_y/Si1 1 1 films was proposed for contact-less monitoring of specimens with different nitrogen to oxygen (N/O) ratios. As a source for the photoinducing light, we used a nitrogen Q-switched pulse laser at wavelengths of 315, 337 and 354 nm as well as doubled frequency YAG–Nd laser wavelength (λ=530 nm). The YAG : Nd pulse laser (λ=1.06 μm; W=30 MW; τ=10–50 ps) was used to measure the PISHG. All measurements were done in a reflected light regime. We found that the output PISHG signal was sensitive to the N/O ratio and the film thickness. Measurements of the PISHG versus pumping wavelengths, powers, incident angles as well as independent measurements of the DC-electric field induced second harmonic generation indicate the major role played in this process by axially symmetric photoexcited electron–phonon states. The SiN_xO_y films were synthesized using a technique of chemical evaporation at low pressures. Films with thickness varying between 10 and 30 nm and with an N/O ratio between 0 and 1 were obtained. Electrostatic potential distribution at the Si1 1 1–SiN_xO_y interfaces was calculated. Comparison of the experimentally obtained and quantum chemically calculated PISHG data are presented. High sensitivity of anisotropic PISHG to the N/O ratio and film thickness is revealed. The role of the electron–phonon interactions in the dependencies observed is discussed. We have shown that the PISHG method has higher sensitivity than the traditional extended X-ray absorption fine structure spectroscopic and linear optical method for films with the N/O ratio higher than 0.50.     

电子初始能量对双向流二极管空间电荷限制流密度的影响

从理论上研究了阴极发射电子初始能量对一维平面非相对论性双向流二极管内空间电荷限制电子、离子流密度的影响,并与阴极发射电子初始能量为0情况下的空间电荷限制电子、离子流密度进行了比较。     

Direct Monitoring of Thickness and Refractive Index of Optical Thin Film Deposited on Fiber End-face

We propose a system for depositing thin films on waveguides which enables low-temperature deposition and precise control of the refractive index and film thickness. It is composed of a conventional ion-beam sputtering (IBS) system and a new system for directly monitoring film characteristics during deposition. We controlled refractive indices over a wide range from 1.52 to 1.97 by moving the sputtering targets (SiO₂ and Si₃N₄) in the IBS system. The refractive index or film thickness was in-situ monitored by observing the optical power reflected from the end-face of a monitoring fiber set in the deposition chamber. Antireflection coating films were successfully deposited on a fiber end-face and a laser diode chip facet with low reflectivity from 0.05 to 0.07%. This deposition system is attractive for constructing highly functional optical devices for future photonic networks.     

Direct Fabrication Methods of Surface Relief Electro-Optic Gratings in Azo-Polymer Films

Two fabrication methods of surface relief electro-optic (EO) gratings in azo-polymer films are described: surface deformation by a continuous wave laser and laser ablation by a pulse laser. In the fabrication process, the periodic intensity modulation of laser beams is formed by an interference fringe or a phase mask. The surface relief EO grating is fabricated by poling the surface relief grating (SRG) after the SRG fabrication process. The linear dependence of an applied voltage in the modulation efficiency of the first-order diffraction beam is observed. The proposed methods are effective for highly-efficient surface relief EO grating fabrication.     

Monitoring of the process of formation of epitaxial films with the use of ultrasoft x-ray spectroscopy

The distinctive features of the atomic and electronic structure of thin surface layers of substances in the process of formation of epitaxial silicon films on silicon are studied using the procedures of reflection and scattering of ultrasoft x-ray radiation. The angular distribution of the scattered x-ray radiation (the scattering indicatrices) and the near fine structure of SiL_2,3 spectra of reflection are investigated. The assumption of the sensitivity of the observed peak of anomalous scattering (the Yoneda peak) of x-ray radiation to the presence, in the surface regions of the materials, of extended double-boundary defects, the defects of packing, grain boundaries, dislocations, etc. is made. It is shown that the experimental procedure used makes it possible to obtain information on the surface layers of substances. Translated from Zhurnal Priklaldnoi Spektroskopii, Vol. 67, No. 4, pp. 496–498, July–August, 2000.