Theoretical Study on the Structural and Optoelectronic Properties of the Linear Perfluorooctane Sulfonate （PFOS）

The perfluoroalkyl substances(PFS) have attracted considerable attention in recent years as a persistent global pollutant to be able to bioaccumulate in higher organisms.In this paper,theoretical analysis on electronic structures,optoelectronic properties and absorption spectra properties of the perflurooctane sulfonate(PFOS) in gas phase have been investigated by using the DFT/TD-DFT method.The geometric structures,electrostatic potentials,energy gaps,ionization potentials,electron affinities,frontier molecular orbital,excitation energies and absorption spectra for the ground state of PFOS were calculated.The result indicates that the ability of accepting electron of neutral PFOS is larger than that of anionic PFOS,while the electron excited by UV irradiation from HOMO to LUMO in the anionic PFOS is easier than that in the neutral PFOS.     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

Extremely low surface recombination in 1 Ω cm n‐type monocrystalline silicon

A key requirement in the recent development of highly efficient silicon solar cells is the outstanding passivation of their surfaces. In this work, plasma enhanced chemical vapour deposition of a triple layer dielectric consisting of amorphous silicon, silicon oxide and silicon nitride, charged extrinsically using corona, has been used to demonstrate extremely low surface recombination. Assuming Richter's parametrisation for bulk lifetime, an effective surface recombination velocity S_eff = 0.1 cm/s at Δn = 10¹⁵ cm^–3 has been obtained for planar, float zone, n ‐type, 1 Ω cm silicon. This equates to a saturation current density J_0s = 0.3 fA/cm², and a 1‐sun implied open‐circuit voltage of 738 mV. These surface recombination parameters are among the lowest reported for 1 Ω cm c‐Si. A combination of impedance spectroscopy and corona‐lifetime measurements shows that the outstanding chemical passivation is due to the small hole capture cross section for states at the interface between the Si and a‐Si layer which are hydrogenated during nitride deposition. (© 2016 The Authors. Phys. Status Solidi RRL published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

The influence of the width of a lattice-matched Al_0.82In_0.18N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrödinger and Poisson equations self-consistently. The wavelength of 1—2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 μm to 3.59 μm. The absorption coefficients of 1—2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1—3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 μm to near 2.11 μm. The absorption coefficients of 1—3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the Al_0.82In_0.18N/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.     

光电侦察与跟瞄装备测试技术

在现代信息化战争中,光电侦察与跟瞄装备的研制试验和使用维护都离不开其测试技术的保障。从4方面简述了国内外光电侦察与跟瞄装备测试技术的发展现状,目前,可见光及微光成像性能参数已实现数字化的综合测量,其中,像面均匀性和畸变检校的测量不确定度分别达到1%和0.2%,最小可分辨温差(MRTD)等红外热成像系统性能参数已出现客观的评测方法,最大测程等激光测距系统性能参数的测量允许误差极限达到1%以内,多光轴一致性的检校测量不确定度达到2。未来,我国在该领域的研究热点将集中在发展各种现场快速精准的检校手段,以及继续提升红外、紫外、微光和白光成像测试技术等方面,并建立和完善其相应的测试标准和保障系统。     

有机张力半导体及其光电特性

分子张力作为空间设计的重要组成部分正成为调控有机半导体的重要手段。由于分子内产生的拉伸张力、扭曲/弯曲张力以及空间张力而导致p轨道排布重组和构型构象结构发生变化,最近各种几何与拓扑结构的高张力有机半导体材料相继被报道,这使得高张力有机半导体材料成为有机电子领域研究的焦点。为了进一步梳理分子张力在有机半导体材料中扮演的角色与价值,该综述从分子张力的类型、实验与理论量化以及可视化出发,总结了高张力共轭芳烃的分子设计策略、与其光电性能分子张力之间的关系,以及这类新兴材料在光电领域的应用。最后,对高张力共轭芳烃的研究前景进行了展望,阐述了该类材料所面临的机遇与挑战。     

二维半导体材料与器件——从传统二维光电材料到石墨炔

近年来,二维半导体材料由于其独特的材料结构和电子输运特性得到了科学界的广泛关注,被应用于光电器件、催化和生物传感器等领域。本文系统概述了传统二维材料以及新兴二维材料石墨炔的发现和发展历程。重点聚焦在二维材料在光探测器领域中的应用,探讨了不同二维材料体系及器件结构对光探测器性能的影响;并详细介绍了新兴二维材料——石墨炔,及其合成和应用。展望了传统二维材料及石墨炔在光电转换器件的应用中所面临的机遇和挑战。     

Multifunctional Sulfur-Hyperdoped Silicon Nanoparticles with Engineered Mid-Infrared Sulfur-Impurity and Free-Carrier Absorption

Si nanoparticles (NPs), which are innovative promising light-harvesting components of thin-film solar cells and key-enabling biocompatible theranostic elements of infrared-laser and radiofrequency hyperthermia-based therapies of cancer cells in tumors and metastases, are significantly advanced in their near/mid-infrared band-to-band and free-carrier absorption via donor sulfur-hyperdoping during high-throughput facile femtosecond-laser ablative production in liquid carbon disulfide. High-resolution transmission electron microscopy and Raman microscopy reveal their mixed nanocrystalline/amorphous structure, enabling the extraordinary sulfur content of a few atomic percents and very minor surface oxidation/carbonization characterized by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. A 200-nm thick layer of the nanoparticles exhibits near−mid-infrared absorbance, comparable to that of the initial 380-micron thick n-doped Si wafer (phosphor-dopant concentration ≈10¹⁵ cm⁻³), with the corresponding extinction coefficient for the hyperdoped NPs being 4–7 orders higher over the broadband spectral range of 1–25 micrometers. Such ultimate, but potentially tunable mid-IR structured, multi-band absorption of various sulfur-impurity clusters and smooth free-carrier absorption are break through advances in mid-infrared (mid-IR) laser and radiofrequency (RF) hyperthermia-based therapies, as envisioned in the RF-heating tests, and in fabrication of higher-efficiency thin-film and bulk photovoltaic devices with ultra-broad (UV−mid-IR) spectral response.     

Optoelectronic Thresholder for Pattern Recognition with Double Feedback Module

The present paper proposes a modification of a simple optoelectronic architecture (A. Bergeron et al.: Appl. Opt. 33 (1994) 1463) for carrying out optical thresholding operations. The threshold operation is achieved by means of a feedback loop. The setup is modified by inserting an attenuator adapted in each iteration to the total incident energy measured by an intensity detector. The proposed architecture does not need an additional light source, assures translation invariance and does not break the beam propagation path. The adaptive attenuator permits working under different lighting conditions (illumination, partially occluded objects, etc.). This kind of architecture is suitable for an optical pattern recognition task, optical neural network or optical associative memory. Application of the modified thresholder to the recognition task based on an optical correlator is reported.     

Optoelectronic Butterfly Interconnection Implementation of an n-bit Parallel Full Addition and Subtraction

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