Pulsed-laser-based methods have been applied for post-implant annealing of p-type Al-doped 4H-SiC wafers in order to restore the crystal structure and to electrically activate the doping species. The annealing was performed with the third harmonic (355 nm) of a Nd:YAG laser at 4 ns pulse duration. The epilayers were characterized by micro-Raman spectroscopy under surface and cross-sectional backscattering. Changes in the phonon mode-intensity were related to the laser annealing induced recrystallization of the implanted material. The results were compared with changes in the infrared reflectivity across the Reststrahlen band. Transmission electron microscopy analysis showed the formation of columnar polycrystalline structure after the laser annealing process. 相似文献
Until recently π‐conjugated organic materials are based mainly on linear systems. Recent years, however, have brought about increasing interest in molecules boasting a dendritic, branched, or star‐shaped architecture. This tendency is a direct result of the ongoing search for materials with progressively better properties. Such compounds, featuring novel, 3D architectures, exhibit a multitude of interesting qualities, making them stand out from well‐known materials. The direction of star‐shaped compound application is determined by whether they are able to form aggregates, π‐stacks. This feature is a source of some astounding properties, coveted in numerous applications. Among this class of compounds high charge mobility, high fluorescence efficiency, and good charge separation are all found. Depending on the structure of the core, the molecule may adopt various types of symmetry. Similarly, the conjugation of orbitals may extend over the whole structure or be interrupted at chosen segments. The number of papers pertaining to star‐shaped oligomers and polymers is ascending with each year, evidencing a growing interest in them. Consequently, this Review focuses particularly on the most recent reports concerning modification of the structure and properties of the aforementioned type of compounds, as well as on the development of devices based on them.
Two-dimensional (2D) materials are widely used in numerous optoelectronic devices due to their ultra-thin dimensions and versatile surfaces. However, less attention is paid to distinguishing the light-matter interactions along the vertical and horizontal paths within the same 2D lattice, as well as comparatively investigating the optoelectronic behaviors between the sensitive top and bottom surfaces. Here, a dual-crossbar configured architecture is designed and constructed based on Bi2O2Se semiconductor, featuring highly compact three-in-one assembly, namely bottom surface horizontal (BSH), middle sandwich vertical (MSV) and top surface horizontal (TSH) devices. The MSV with nanoscale channel possesses efficient separation and transportation of the photogenerated electrons and holes, responding faster to the light stimulation and compared favorably to the BSH and TSH devices. The optoelectric behaviors of the BSH device can be regulated by the characteristics of the substrate due to closer contact. Nevertheless, the performance of the TSH device is more sensitive to the environment, such as dopant absorption and heat dispersion, thus enabling the non-volatile photoresponse and can be employed as an artificial optoelectronic synapse. This work highlights the importance of designing the device architecture based on the intrinsic structural advantages of 2D materials, paving the way toward integrated optoelectronics. 相似文献