2-D Simulation and New Structures of Heterojunction Phototransistor for Higher Optical Amplification in Optoelectronic Integrated Devices

The improvement of optical gain is an important priority for performance design in most of optoelectronic integrated devices (OEIDS). A two-dimensional simulator is developed for the rigorous analysis and optimum design of devices. With it, we analyze the characteristics of heterojunction phototransistor (HPT) which acts as a light-detector in OEID, and we propose new structures of HPT to increase the conversion gain without much increase in dark current. Then, the simulation of an OEID composed of an HPT integrated over a light-emitting diode (LED) is implemented, and it is shown that the new structures significantly improve the optical amplification for low input light power over the conventional structure.Presented at the International Commission for Optics Topical Meeting, Kyoto, 1994.     

数字平面检测系统误差和精度评价方法的研究

通过对光学平面玻璃样品表面检测结果的分析，对激光数字平面检测系统中，应用泽尼克多项式进行平面分析的系统理论误差以及被测表面形状类型的判别方法进行了深入的研究，并应用误差分析理论，提出了一个在“泽尼克像差空间”确定激光数字平面检测系统精度的理论和方法。     

Simple theoretical analysis of the Fowler-Nordheim field emission from microstructures and quantum wires of optoelectronic materials

We present a simplified theoretical formulation of the Fowler-Nordheim field emission (FNFE) under magnetic quantization and also in quantum wires of optoelectronic materials on the basis of a newly formulated electron dispersion law in the presence of strong electric field within the framework of k.p formalism taking InAs, InSb, GaAs, Hg_1−xCd_xTe and In_1−xGa_x As_yP_1−y lattice matched to InP as examples. The FNFE exhibits oscillations with inverse quantizing magnetic field and electron concentration due to SdH effect and increases with increasing electric field. For quantum wires the FNFE increases with increasing film thickness due to the existence van-Hove singularity and the magnitude of the quantum jumps are not of same height indicating the signature of the band structure of the material concerned. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the field current varies in various manners with all the variables in all the limiting cases as evident from all the curves, the rates of variations are totally band-structure dependent. Under certain limiting conditions, all the results as derived in this paper get transformed in to well known Fowler-Nordheim formula.     

负电子亲和势GaN真空面电子源研究进展

结合国内和国外的最新研究成果,论述了目前在NEA GaN真空面电子源研究方面的现状. 从光电发射理论、表面净化方法、阴极激活工艺、光谱响应测试以及材料本身特性等方面针对GaN真空电子源的研究取得了一定成绩:初步研究了NEA GaN电子源的光电发射机理;给出了可获得原子级清洁表面的净化方法;采用Cs或Cs/O对GaN材料进行了有效激活;测试了GaN真空电子源材料的光谱响应;探讨了影响电子源量子效率的材料特性. 指出了下一步研究需要关注的内容. 关键词： NEA GaN 电子源 光谱响应     

柔性光电器件发光层用ZnO微纳阵列/聚合物复合材料

采用简单的低温(温度未超过100 °C)溶液法在具有较好柔韧度的基于聚对苯二甲酸乙二醇酯(PET)衬底的铟锡氧化物(ITO)导电膜(PET/ITO)上成功制备了聚丙烯酰胺(PAM)修饰的ZnO微纳阵列. 用X射线衍射(XRD)仪和扫描电子显微镜(SEM)对ZnO微纳阵列的晶体结构和表面形貌进行了表征, 结果表明ZnO阵列的平均直径为150 nm, 长度为3 μm, 端面具有六边形结构, 沿[0001]方向择优生长, 较好地垂直在PET/ITO上; 探讨了ZnO微纳阵列在PAM存在下的形成机理以及所制备的ZnO阵列在柔性光电器件方面的应用; ZnO微纳阵列的光致发光(PL)性能表明, 在没有PAM的存在下, 具有蓝光(457 nm)和绿光(530 nm)缺陷发射峰, 这可能是电子分别从扩展态锌间隙(Zn_i)到价带和从导带到锌位氧(O_Zn)的跃迁引起的, 而在PAM存在下所制备的PAM/ZnO阵列仅仅在400 nm处有一个发射峰, 这是由于电子从Zn_i到价带的跃迁引起的. 基于PAM/ZnO的柔性器件具有较好的二极管特性, 表明其在柔性光电器件方面的应用极具潜力.     

分级多孔结构ZnO微球的制备及其光电性能

采用简单的低温化学溶液沉积方法制备了分级多孔ZnO微球。利用X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电镜(TEM)、N2吸附脱附以及紫外-可见分光光度计(UV-Vis)等对样品进行了表征。结果显示产物为分级多孔结构的ZnO微球,由直径约10~20 nm ZnO颗粒组装而成,比表面积为40 m2.g-1。把多孔ZnO微球用作染料敏化太阳能电池(DSCs)光阳极,结果表明,该光阳极在增强对入射光的散射作用的同时,为染料分子的吸附提供了较大比表面积,从而提高了DSCs的光伏性能。     

Delineating poly(aniline) redox chemistry by using tailored oligo(aryleneamine)s: towards oligo(aniline)-based organic semiconductors with tunable optoelectronic properties

The simple and elegant Buchwald-Hartwig cross-coupling reaction has been used to synthesise a designed range of new aniline-based tetramers in one step, and without the need for protecting groups. Variation of the central aromatic ring has provided the opportunity to carefully tune the optoelectronic properties in this series, thus enabling a structure-activity relationship study by using a range of photophysical and electrochemical techniques. As a result, the long-proposed sequences of electron-electron (EE) and electron-chemical (EC) processes that support the complex redox and proton-transfer reactions involved in the well-known switching of redox states of poly- and oligo(aniline)s are revealed here for the first time. We also present the initial results from time-dependent DFT calculations to clarify the optoelectronic behaviour of these oligomers. The dc-conductivity measurements of conducting thin films of this series, doped with the prototypical poly(aniline) protonating agent D,L-camphor-10-sulfonic acid (CSA), externally plasticised with triphenyl phosphate (TPP), and processed from m-cresol (MC) solutions, are also presented.     

First-principles study of the properties of Pmn21-B1–xAlxN

Abstract

The structural, mechanical, elastic anisotropic, thermodynamic and optoelectronic properties of Pmn2₁-B_1–xAl_xN are investigated using density functional theory (DFT) calculations. For BN and AlN, the lattice parameters, elastic constants and elastic modulus are found to be in agreement with others’ theoretical data. The absence of any imaginary phonon frequencies in the entire Brillouin zone confirms that Pmn2₁-B_1–xAl_xN alloys are dynamically stable. The vibration modes transfer from high frequency to low frequency with the increase of the component Al. All of Pmn2₁-B_1–xAl_xN (x = 0, 0.25, 0.50, 0.75, 1) behave in a brittle manner. Ternary BAlN alloys are more anisotropic than BN and AlN. The Debye temperature decreases with the increase of the component Al. At temperatures below 2000 K, the heat capacity of Pmn2₁-B_1–xAl_xN increases with the increase of the component Al. For B_0.5Al_0.5N, below the Fermi level, B p contributes more than Al p, whereas above the Fermi level, Al p contributes more than B p. With the increase of composition Al, B–N interactions become weaker and Al–N interactions become stronger, and the dielectric function, absorption and Raman intensity drift from high-frequency to low-frequency.     

基于永磁同步电机的光电设备新型驱动研究

针对目前光电设备中直流电机的惯量大、成本高、需要维护等问题,提出了交流伺服控制系统,以适应新型光电设备的发展要求或替代目前的直流控制系统。以永磁同步电机为控制对象,分析了永磁同步电机的磁场定向矢量控制原理,以获得类似直流电动机的控制效果。通过复合式光电编码器确定永磁同步电动机转子的初始位置,设计了永磁同步电机伺服控制系统的硬件电路。以id-0的矢量控制方法实现了永磁同步电机位置闭环伺服控制,能够满足新型光电设备跟踪控制系统的快速与稳定性要求。