PECVDSiON薄膜的工艺控制,性质及其潜在应用

研究了等离子增强化学气相淀积氮氧化硅薄膜的工艺控制、性质以及薄膜波导在超大规模集成电路光互连中的潜在应用。     

利用光热偏转技术实施光学薄膜弱吸收的多波长测量

介绍了光热表面形变光束偏转技术用于测量光学薄膜弱吸收的基本原理,简述多波长吸收测量装置的建立和测试过程,最后给出简单的测量实例.     

A saxpy formulation for plane rotations

An algorithm for pre- or post-multiplication of a matrix by a plane rotation, using only three vector saxpy operations instead of the four vector operations usually considered necessary, is described. No auxiliary storage for overwriting is required. The method is shown to be numerically stable.     

调制不稳定性对级联放大光纤传输系统信噪比的影响

在考虑光纤损耗和级联放大器的情况下，推导了调制不稳定性的产生条件和增益的普适解析表达式，分析了调制不稳定性对信噪比的影响，给出了一个新的计算信噪比的表达式。     

正方分布的4×4单模光纤熔锥耦合器耦合特性分析

本文以线性耦合波方程为基础,采用散射矩阵的方法讨论了具有正方分布的4×4单模光纤熔锥形耦合器的耦合特性,并与实验作了比较,得到了比较一致的结果。     

非线性物理简介:8.光学孤子及其在光纤通讯中的应用

本文介绍了光学孤子的形成、特性及其在光纤通讯中的应用．     

采用级联原子滤光器的新型卫星激光链路系统研究

提出级联佛克脱型原子滤光器(Linked VADOF)的新构想。从理论上分析并计算了级联佛克脱型原子滤光器的透射谱。结果表明，级联佛克脱型原子滤光器将佛克脱型原子滤光器的多峰改造为单峰结构，具有比佛克脱型原子滤光器更窄的线宽和更高的噪声抑制比。将这种新型结构应用于激光信标锁频。该锁频方案提高了信标光频率的稳定性。在此基础上，给出了发射端采用级联佛克脱型原子滤光器锁频，接收端采用法拉第型原子滤光器(FADOF)滤光的新型卫星激光链路系统。外场初步联调实验表明了该系统的可行性。     

测定透镜厚度新法及其误差探讨

本文介绍利用景深短、高倍率、大口径的物镜，采用光学方法，对被测透镜上下表面调焦，从而测定其中心厚度的一种新方法，并对测量误差进行了探讨。     

荧光光纤温度传感器激励光源的选择

本文分析计算了荧光光纤温度传感器的温敏元件——GsAlAs/GaAs双异质结半导体材料的荧光辐射效率与激励光波长的关系。讨论了温度测量范围及温敏元件GaAlAs层铝含量对激励光源的限制,在0～200℃测温范围内,若采用LED作激励光源,其峰值波长应在0.70～0.76μm之间选择。     

InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

The first fully operational mid-IR (3–5 μm) 256×256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detecor chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 595707 (2005).