Effects of laser irradiation on optical properties of a-Se100−x Te x thin films

The effect of laser irradiation on the optical properties of thermally evaporated Se_100?x Te _x (x=8, 12, 16) chalcogenide thin films has been studied. The result shows that the irradiation causes a shift in the optical gap. The results have been analyzed on the basis of laser irradiation-induced defects in the film. The width of the tail of localized state in the band gap has been evaluated using the Urbach edge method. As the irradiation time increases, the values of the optical energy gap for all compositions decrease, while tail energy width increases. It is also observed that the optical energy gap decreases with increasing Te content in the alloy. These changes are a consequence of an increment in disorder produced by laser irradiation in the amorphous structure of thin film.     

Helium blistering of niobium: Large swelling measurements supporting the gas pressure model

Crystal potentials are usually obtained through a combination of theoretical calculation and the fitting of crystal properties. Because of thermal expansion of the crystal, the equilibrium condition is not satisfied at all temperatures unless the crystal potential is made temperature-dependent. A quasiharmonic potential that satisfies the equilibrium condition at all temperatures is derived from KC1 and used to calculate temperature-dependent defect energies (at constant volume). Other thermodynamic defect parameters are then derived by combining these results with the experimental Gibbs energies. The temperature-dependence of these parameters is displayed.     

北京自由电子激光最近进展──实现饱和振荡

北京自由电子激光(BFEL)装置于1993年底在10.68μm处实现了饱和振荡.输出激光能量为3mJ,饱和平顶宽度2μs.对应饱和振荡平均功率为210kW(宏脉冲),峰值功率约为20MW,比自发辐射高8个量级,单程小讯号净增益为24%,转换效率为0.45%,与理论预期结果相符.光束质量接近衍射极限.目前装置可工作于9-11μm.     

多环架光电稳定系统及分析

提出一种多环架高精度光电稳定系统方案。通过对其进行运动学分析，并结合伺服控制原理，证明该方案优于常规的二环架光电稳定系统。     

H^＋注入锗酸铋晶体表面层的性质

Ｈ＾＋注入锗酸铋（Ｂｉ４Ｇｅ３Ｏ１２或ＢＧＯ）晶体引起某些效应，如辐射损伤，光学吸收和近表层区域的晶体分解。经Ｈ＾＋注入后，ＢＧＯ晶体的颜色变成棕色，但实验中证实不了该变化是由色心的产生所引起。此外，实验中也示观察到Ｈ＾＋注入ＢＧＯ晶体中有离子束诱发的光学活性变化。可见在注入过程中，未发生从Ｂｉ４Ｇｅ３Ｏ１２转变到Ｂｉ１２ＧｅＯ２０的结构相变，由此预见，注入过程中可能发生离子束引起的晶体分解。Ｈ＾     

Hybrid Optical-Electronic Implementation of Morphological Edge Detection

ＨｙｂｒｉｄＯｐｔｉｃａｌ－ＥｌｅｃｔｒｏｎｉｃＩｍｐｌｅｍｅｎｔａｔｉｏｎｏｆＭｏｒｐｈｏｌｏｇｉｃａｌＥｄｇｅＤｅｔｅｃｔｉｏｎ￥ＹＵＡＮＳｈｉｆｕ；ＺＨＡＮＧＸｕｅｒｕ；ＺＨＡＯＳｈｉｊｉｅ；ＬＩＹａｎ；ＣＨＥＮＬｉｘｕｅ（Ｄｅｐａｒｔｍｅｎｔ...     

Mo掺杂4H-SiC的磁性和光学性能的第一性原理研究

基于第一性原理密度泛函理论（DFT）的广义梯度近似（GGA）的平面波赝势法（PBE）,计算了4H-SiC的本征体系、过渡金属元素Mo单掺杂4H-SiC体系的电子结构、磁性和光学特性。结果表明：Mo掺杂将导致4H-SiC由本征非磁性变为p型磁性半导体材料,其带隙值由2.88 eV 变为0.55 eV。当Mo掺杂浓度为1.359×1021 cm-3时,磁矩为0.98 ,这表明掺Mo后的4H-SiC材料可以作为自旋电子元器件的备选材料。此外,Mo掺杂4H-SiC体系在（100）和（001）方向的静态介电常数分别为3.780和3.969。介质函数虚部不为0的起始点发生红移,表明掺杂使电子更容易跃迁。     

远距离三原子量子纠缠特性与其应用

三原子分别被束缚在用光纤环形连接单侧泄漏微光学腔场中,在微腔中输入激光驱动场和施加局域激光场,利用输入-输出技术及绝热近似理论,推导出一维Ising链模型的有效哈密顿量,该哈密顿量表明该系统会诱导出三原子中的任意两原子纠缠及三原子纠缠,用伴随数(concurrence)度量两原子纠缠,用内禀纠缠度量三原子纠缠,通过数值计算,给出两原子和三原子纠缠随时间演化曲线,通过适当调控激光驱动场和局域激光场,在远距离三原子中任意两原子实现未知量子态的隐形传送。