L2×L2中的一类无穷维Hamilton算子的剩余谱

该文得到了一类无穷维Hamilton算子的剩余谱和点谱存在的几个判别准则,从而给出 了求其剩余谱和点谱的方法．在此基础上构造了L2×L2中无穷维Hamilton算子的剩余谱 非空的具体例子,从而进一步验证了判别准则的有效性．     

基于LPC2210和SSD1339的PM-OLED驱动控制电路

为了避免早期无源矩阵有机电致发光器件驱动控制电路的一些缺陷,如:"串扰"和"交叉"效应以及电路连接比较复杂,用两种方法实现了基于飞利浦公司生产的LPC2210控制芯片和晶门科技公司的SSD1339驱动芯片的驱动控制电路。首先介绍了有机电致发光器件的结构和发光原理以及芯片SSD1339和LPC2210的主要的特点;分析和比较了SSD1339的8080系列并行口和LPC2210外部存储控制单元的读写时序;分别利用LPC2210的通用输入输出单元和外部存储控制单元,成功的控制SSD1339驱动128RGB×128点阵有机电致发光屏。实验结果表明:两种方法不仅可以有效地克服早期驱动控制电路的缺陷,而且可以使有机电致发光屏显示出高质量的图片;用外部存储控制单元实现的驱动控制电路,可以实现约80 Hz的驱动帧频;而使用通用输入输出单元实现的驱动控制电路,可以单步跟踪数据的传输,因此它具有方便查错的优势。本次实验为在不同的集成环境下无源矩阵有机电致发光器件驱动控制电路的设计奠定基础。     

Heavy quarkonia spectra and their decays in a relativistic quark model

Using the phenomenological relativistic harmonic model (RHM) for quarks, we have obtained the masses of S wave charmonium and bottomonium states. The full Hamiltonian used in the investigation has Lorentz scalar plus vector confinement potential, along with the confined one gluon exchange potential (COGEP). A good agreement with the experimental masses for the ground and the radially excited states is obtained both for the triplet and singlet S wave mesons. The decay properties of the ground state charmonium and bottomonium are investigated.     

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.     

Sub- and Super-Luminal Phenomena in a Doubly Driven Four-Level System

With the occurrence of an adding driving field, the properties of the dispersion and the absorption of a four-level system are changed greatly. The system can produce the normal and anomalous dispersion regions with proper parameters. Here, the driving fields can be seemed as knobs to manipulate the groupvelocity of a weak probe field between subluminal and superluminal.     

Hopping Transport and Stochastic Dynamics of Electrons in Plasma Layers

We investigate the stochastic dynamics and the hopping transfer of electrons embedded into two‐dimensional atomic layers. First we formulate the quantum statistics of general atom ‐ electron systems based on the tight‐binding approximation and express ‐ following linear response transport theory ‐ the quantum‐mechanical time correlation functions and the conductivity by means of equilibrium time correlation functions. Within the relaxation time approach an expression for the effective collision frequency is derived in Born approximation, which takes into account quantum effects and dynamic effects of the atom motion through the dynamic structure factor of the lattice and the quantum dynamics of the electrons. In the last part we derive Pauli equations for the stochastic electron dynamics including nonlinear excitations of the atomic subsystem. We carry out Monte Carlo simulations and show that mean square displacements of electrons and transport properties are in a moderate to high temperature regime strongly influenced by by soliton‐type excitations and demonstrate the existence of percolation effects (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The Role of Potential Structure in Excitation Functions of Synthesizing Superheavy Nuclei

The excitation functions of two very similar reaction channels, 58Fe＋ 208pb→ 265Hs ＋ 1n and 58Fe＋ 209Bi → 266Mt ＋1n are studied in the framework of the dinuclear system conception. The fusion probabilities are found to be strongly subject to the structure of the driving potential. Usually the fusion probability is hindered by a barrier from the injection channel towards the compound nuclear configuration. The barrier towards the mass symmetrical direction, however, also plays an important role for the fusion probability, because the barrier hinders the quasi-fission, and therefore helps fusion.     

高功率窄脉宽半导体激光激励器设计

为了获得高功率窄脉宽半导体激光,设计了半导体激光器相应的激励单元,论述MOSFET作为高速开关的工作机理,分析基于MOSFET作为高速开关产生窄的大电流脉冲的电路模型.为了使MOSFET开关速度尽可能快,根据前述分析,提出推挽式MOSFET栅极驱动方式并设计了触发窄脉冲的发生电路.当激光二极管接入放电回路时,实验表明:激光二极管输出光的峰值功率可达67.5 W,脉宽约为20 ns.最后,简要分析了影响光脉冲宽度的因素.