Electrical resistivity studies of benzidine-TCNQ and its inclusion compound under high pressure

Electrical resistivity studies of the charge transfer complex benzidine—TCNQ and its inclusion compound, have been carried out up to pressures 8 GPa. Two types of behaviour were observed in these complexes under high pressure and this difference is interpreted and discussed.     

高电压脉冲功率调节系统的数值模拟

介绍高电压脉冲功率调节系统（储能电感／断路开关）的模拟计算方法．根据使用的初始能源种类不同，分别对电容器模型和简单的爆炸应压缩发生器（ＭＦＣＧ）模型作了初步计算．对于后者，分别考虑不带断路开关和带断路开关负载两种情况，从结果比较可知电流将变化２０％—３１％．在电容器模型中，分别考虑了负载、初始充电电压、储能电感等因素的影响．通过计算表明，要得到理想的输出结果，必须对系统运行参数进行优化．     

The influence of extended conjugation on electroactive properties of copper phthalocyanine macromolecules

A monomer and polymer of a copper(II) phthalocyanine have been synthesized in order to develop structure-property relationships. Various electroactive properties such as dielectric constant, resistivity and thermally stimulated depolarization effects were investigated in order to examine the influence of extended conjugation.     

测定金属电阻温度系数的方法研究

从金属电阻率与温度的线性关系出发,设计了测定金属电阻温度系数的实验方案。利用基本的电磁学仪器和热学仪器组合进行实验,以漆包铜线作为待测金属丝测定出铜的电阻温度系数,分析了导致系统误差产生的主要原因,并就待测金属丝的选取原则、温度控制的方法进行了讨论。     

AlNxOy thin films deposited by DC reactive magnetron sputtering

AlN_xO_y thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resistivity of the coatings are strongly correlated with discharge parameters. Varying the reactive gas mixture partial pressure, the film properties change gradually from metallic-like films, for low reactive gas partial pressures, to stoichiometric amorphous Al₂O₃ insulator films, at high pressures. For intermediate reactive gas pressures, sub-stoichiometric AlN_xO_y films were obtained, with the electrical resistivity of the films increasing with the non-metallic/metallic ratio.     

Characteristics of electron beam evaporated nanocrystalline SnO2 thin films annealed in air

Tin oxide (SnO₂) thin films (about 200 nm thick) have been deposited by electron beam evaporation followed by annealing in air at 350-550 °C for two hours. Optical, electrical and structural properties were studied as a function of annealing temperature. The as-deposited film is amorphous, while all other annealed films are crystalline (having tetragonal structure). XRD suggest that the films are composed of nanoparticles of 5-10 nm. Raman analysis and optical measurements suggest quantum confinement effects that are enhanced with annealing temperature. For instance, Raman peaks of the as-deposited films are blue-shifted as compared to those for bulk SnO₂. Blue shift becomes more pronounced with annealing temperature. Optical band gap energy of amorphous SnO₂ film is 3.61 eV, which increases to about 4.22 eV after crystallization. Two orders of magnitude decrease in resistivity is observed after annealing at 350-400 °C due to structural ordering and crystallization. The resistivity, however, increases slightly with annealing temperature above 400 °C, possibly due to improvement in stoichiometry and associated decrease in charge carrier density.     

On tuning the orientation of grains of spray pyrolysed ZnO thin films

Effect of varying spray rate on the structure and optoelectronic properties of spray pyrolysed ZnO film is analysed. ZnO films were characterised using different techniques such as X-ray diffraction (XRD), photoluminescence, electrical resistivity measurement, and optical absorption. The XRD analysis proved that, with the increase in spray rate, orientation of the grains changed from (1 0 1) plane to (0 0 2) plane. The films exhibited luminescence in two regions—one was the ‘near band-edge’ (NBE) (∼380 nm) emission and the other one was the ‘blue-green emission’ (∼503 nm). Intensity of the blue-green emission decreased after orientation of grains shifted to (0 0 2) plane. Scanning electron microscope (SEM) analysis of the films asserts that spray rate has major role in improving the crystallographic properties of the films. Moreover resistivity of the films could be lowered to 2.4 × 10⁻² Ω cm without any doping or post-deposition annealing.     

An investigation of structural phase transformation and electrical resistivity in Ta films

In this work, we report the effect of substrate, film thickness and sputter pressure on the phase transformation and electrical resistivity in tantalum (Ta) films. The films were grown on Si(1 0 0) substrates with native oxides in place and glass substrates by varying the film thickness (t) and pressure of the working gas (p_Ar). X-ray diffraction (XRD) analysis showed that the formation of α and β phases in Ta films strongly depend on the choice of substrate, film thickness t and sputter pressure p_Ar. A stable α-phase was observed on Si(1 0 0) substrates for t ≤ 200 nm. Both α and β phases were found to grow on glass substrates at all thicknesses except t = 100 nm. All the films grown on Si(1 0 0) substrates for p_Ar ≤ 6.5 mTorr had α-phase with strong (1 1 0) texture normal to the film plane. The glass substrates promoted the formation of β-phase in all p_Ar except p_Ar = 5.5 mTorr. The resistivity ρ was observed to decrease with t, whereas ρ was increased with p_Ar on Si(1 0 0) substrates. In all films, the measured resistivity ρ was greater than the bulk resistivity. The resistivity ρ was influenced by the effects of surface roughness and grain size.     

Global strong solution to the three dimensional nonhomogeneous incompressible magnetohydrodynamic equations with density‐dependent viscosity and resistivity

In this paper, we consider an initial boundary value problem for the 3‐dimensional nonhomogeneous incompressible magnetohydrodynamic equations with density‐dependent viscosity and resistivity coefficients over a bounded smooth domain. Global in time unique strong solution is proved to exist when the L² norms of initial vorticity and current density are both suitably small with arbitrary large initial density, and the vacuum of initial density is also allowed. Finally, we revisit the Navier‐Stokes model without electromagnetic effect. We find that this initial boundary problem also admits a unique global strong solution under other conditions. In particular, we prove small kinetic‐energy strong solution exists globally in time, which extends the recent result of Huang and Wang.     

Simulation of Electrical Resistivity of Carbon Black Filled Rubber under Elongation

It has been known that the carbon black (CB) network is responsible for the electrical and mechanical behaviors of filled rubber. Due to the complexity involved in the filled rubber in relation to the conductive mechanism of the CB network, there has been little work concerned with simulation of the electrical behavior at large strains. Based upon an infinite circuit model, the electrical resistivity of CB filled rubber under elongation is simulated. For CB (N330) filled natural rubber with volume fraction of 27.5%, the simulated electrical resistivity increases with elongation at small stains, corresponding to the breakup of the agglomerates. The reduction in resistivity at larger strains corresponds to the decrease of the junction width, which results in a decrease of the contact resistance. Good agreement is found between the simulations and the experimental data available in the literature. The simulated results confirm the effects of the breakdown of the CB network and the alignment of CB aggregates under strain on the electrical resistivity.