Pressure dependence electrical resistivity in DVT grown molybdenum dichalcogenides

Abstract

Single crystals of MoS _x Se_2?x (x=0, 1, 2) have been grown by direct vapour transport method. Pressure-dependent d.c. electrical resistivity measurements have been carried out on the grown crystals to check the possibility of phase transition up to 8 GPa. However, no such transition is observed in the present case but a decrease in resistivity is found with increase in pressure. The observed results have been analysed and discussed on the basis of band structure.     

Hydrostaticity and hidden order: effects of experimental conditions on the temperature–pressure phase diagram of URu2Si2

The pressure dependence of the hidden order phase transition of URu₂Si₂ is shown to depend sensitively upon the quality of hydrostatic pressure conditions during electrical resistivity measurements. Hysteresis in pressure is demonstrated for two choices of pressure medium: the commonly used mixture of 1:1 Fluorinert FC70/FC77 and pure FC75. In contrast, no hysteresis is observed when the pressure medium is a 1:1 mixture of n-pentane/isoamyl alcohol, as it remains hydrostatic over the entire studied pressure range. Possible ramifications for the interpretation of the temperature–pressure phase diagram of URu₂Si₂ are discussed.     

Electrical and mechanical behavior of filled rubber. III. Dynamic loading and the rate of recovery

Following the earlier articles in this series, the changes in the electrical resistivity and mechanical behavior as a result of static and dynamic deformation have been studied. Cyclic shear and tensile loading were used to follow the changes in stress and resistivity with strain, including the recovery with time from the effects of a large strain as monitored by the small‐strain behavior. The recovery of resistivity from a prestrain was not complete even after 7 days at room temperature or at 50 °C, but swelling with a solvent and subsequent drying produced rapid recovery. It appears from the detailed results that there are two strain regions. Below about 10% the resistance and the modulus are strongly dependent on the filler–filler structure, which can break down and reform fairly readily, but the changes at higher strains are probably influenced by changes in the elastomer matrix and also by slippage at the filler–rubber interface. © 2005 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 43: 1649–1661, 2005     

扩展幂律型脱钉和高温超导体及MgB2的电阻转变

近来，关于无序涡旋物质凝聚体的著名的涡旋玻璃理论受到了来自某些新实验的严重质疑．我们重新审查了高温超导体的临界标度，发现超导混合态的直流伏安特性具有扩展幂律的一般形式．由该扩展幂律型非线性方程模拟的等温线和Strachan等人得到的实验数据[Phys．Rev．Lett．87（2001），067007]符合得很好．文中还讨论了长期以来围绕纵向电阻率和霍尔电阻率的临界指数的某些争议．     

水和乙醇对纳米管结构聚苯胺电阻率的影响

研究了水和无水乙醇对萘磺酸掺杂的纳米管结构聚苯胺的电阻率-温度依赖关系的影响（测量温区为80—300K）.实验结果表明，水分子和乙醇分子的进入均使样品的电导率升高.利用电荷能量限制隧道模型结合纳米管粉末压片的结构特点，认为样品电阻主要来源于纳米管间接触电阻.水或乙醇分子在纳米管聚苯胺中通过与分子链的相互作用，增加了链间与链上非局域化载流子的数量，增大管间接触界面，降低了载流子的隧穿势垒，进而提高了导电能力.但水和乙醇对样品导电性质影响程度是不同的，主要是因为水分子和乙醇分子在结构和物理化学性质上的不同. 关键词： 聚苯胺 纳米管 电阻率     

电爆炸断路开关

 叙述了金属导体电爆炸的物理过程，分析了金属导体电爆炸时电阻率与比作用量、压力、能量、密度、爆炸产物膨胀速度、导体电流密度及周围介质等影响因素的关系，从而确定电爆炸断路开关的一般设计原则。     

纳米晶FeCuNbMSiB（M＝Nb，V，Mo）合金的微结构及其电阻率与压力的关系

 X射线衍射和透射电镜的结果表明：非晶FeCuNbMSiB（M＝Nb，V，Mo）合金在540 ℃退火20 min，表面析出的纳米晶是α-FeSi固溶体，粒度为10~20 nm。此外，在0.000 1~2.4 GPa范围内测量了它们的常压室温电阻率以及电阻率随静水压的变化，得到了电阻率与压力的线性关系式。最后探讨了热处理方式和温度对非晶Fe_73.1Cu_1.2Nb_3.2Si_12.5B₁₀合金退火形成纳米晶的影响。     

Influence of root resistivity on plant water uptake mechanism,part I: numerical solution

The issue of water flow through the root zone of field crops represents a complex problem requiring knowledge of a large spectrum of phenomena from various disciplines. Although many investigations have been devoted to gain better understanding of water dynamics in the root zone, the problem is still insufficiently understood. The main objective of the presented work was to analyze the importance of root water resistivity in the plant water extraction process. The problem was solved numerically for a wide range of the soil–root conductivity ratio (SRCR). Two different types of root water uptake (RWU) mechanisms were obtained. The first one is related to low root resistivity or low SRCR, and, thus, exhibits a so-called “moving uptake front” (MUF) effect observed previously in several experimental studies. The second one is inherent in large values of root resistivity or high values of SRCR (larger than 10⁴), and is strongly dependent on the root density distribution. Deceased.     

温度对纳米ZnO膜电学光学性质影响的研究

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Specific contact resistivity of silver contacts on highT cYBa2Cu3O7 superconductors

Specific contact resistances of vacuum-evaporated silver contacts on new oxide superconductors, YBa₂Cu₃O₇ are measured using a modified Kelvin test structure. Contact resistivity increases continuously as the temperature decreases down to zero resistance point. AtT _c, its value is ∼0.15 ohm cm² which is high for technological applications. The nature of contacts appears different from that of semiconductor metal structures.