Gas Storage in Single-Walled Carbon Nanotubes

Abstract

X-ray diffraction (XRD) and electrical resistance measurement on single-walled carbon nan-otube (SWNT) samples prepared by the arc-discharge method are reported. The XRD profile of heat-treated sample indicated that air (oxygen, and/or nitrogen and/or water) can be condensed inside the SWNTs. We also found that the electrical resistance of SWNT soot is significantly affected by exposing to the oxygen gas and humid air.     

One-step measurements of powder resistivity as a function of relative humidity and its effect on charging

A new one-step technique to measure the effect of ambient humidity on powder resistivity has been previously presented. In this article, we provide more experimental data obtained with five different powders. One-step measurements and traditional multi-step measurements were performed. Also, additional measurements were performed using standard resistivity cell. Results were compared and it could be concluded that the new technique provided meaningful results although significant hysteresis was observed during humidification and drying cycles. Finally, charging of the powder was also measured and it was noticed that it decreases with decreasing resistivity and increasing humidity.     

Investigation on ion movement in the fringe-field switching mode depending on resistivity of alignment layer and dielectric anisotropic sign of liquid crystal

Adsorption and desorption of ions at interface between liquid crystal and alignment layer in liquid crystal displays play a crucial role in residual direct current voltage associated with image sticking. In this article, the dependency of such adsorption and desorption of ions on resistivity of alignment layer and sign of liquid crystal dielectric anisotropy in the fringe-field liquid crystal cell has been investigated. Our studies show that the time constant of ions during adsorption and desorption depends upon resistivity and dielectric constant of liquid crystal and alignment layer, and most strongly influenced by the resistivity of alignment layer such that the one with lower resistivity in two orders shows much faster adsorption and desorption at the interface than that of the one with higher resistivity.     

Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition

Polycrystalline Ga-doped (Ga content: 4 wt%) ZnO (GZO) thin films were deposited on glass substrates at 200 C by a reactive plasma deposition with DC arc discharge technique. The dependences of structural and electrical properties of GZO films on thickness, ranging from 30 to 560 nm, were investigated. Carrier concentration, n, and Hall mobility, μ, increases with increasing film thickness below 100 nm, and then the n remains nearly constant and the μ gradually increases until the thickness reaches 560 nm. The resistivity obtained of the order of 10⁻⁴ Ω cm for these films decreases with increasing film thickness: The highest resistivity achieved is 4.4×10⁻⁴ Ω cm with n of 7.6×10²⁰ cm⁻³ and μ of 18.5 cm²/V s for GZO films with a thickness of 30 nm and the lowest one is 1.8×10⁻⁴ Ω cm with n of 1.1×10²¹ cm⁻³ and μ of 31.7 cm²/V s for the GZO film with a thickness of 560 nm. X-ray diffraction pattern for all the films shows a hexagonal wurtzite structure with its strongly preferred orientation along the c-axis. Full width at half maximum of the (002) preferred orientation diffraction peak of the films decreases with increasing film thickness below 100 nm.     

高压下锐钛矿TiO2的电阻率及能带结构的研究

应用在位电阻率测量方法研究高压下锐钛矿TiO2的电学性质. 通过研究电阻率随压力变化的异常变化点, 观察到了TiO2从锐钛矿-柯铁矿-斜锆石的相变. 卸压后,电阻率和初始值相差2个数量级, 说明该相变为不可逆相变. 结合第一性原理计算结果表明, 柯铁矿结构更小的带隙是导致TiO2电阻率减小的根本原因.     

Resistivity and Thermal Expansion (4.2–820 K) of Skutterudites after Severe Plastic Deformation via HPT

Thermoelectric materials with a high figure of merit, ZT, are the essential basis to build thermoelectric generators, which can directly convert heat into electricity. Severe plastic deformation (SPD) via high-pressure torsion (HPT) was successfully applied to enhance ZT of ball-milled and hot-pressed skutterudites as well as to produce bulk nanostructured skutterudites directly from powders. SPD introduces many defects into the sample and in parallel the crystallite size is significantly reduced. During measurement-induced heating these defects anneal partially out, and the grains grow. In this work for the first time systematically the changes of the temperature-dependent electrical resistivity and of thermal expansion were compared. It could be shown that for p- and n-type skutterudites, being hot-pressed and HPT-processed as well as directly HPT-processed from compacted powder, these changes occur more or less simultaneously within the same temperature ranges. This evaluation gives a much deeper insight into the thermoelectric behavior of HPT samples under the influence of changing temperature.     

活性炭/有机质复合相变材料的热-电性能

用活性炭(AC)作为支撑材料,石蜡(PW)、十六酸(PA)和硬脂酸(SA)作为相变主材,通过熔融共混法制备AC/PW、AC/PA和AC/SA复合相变材料,并考察了其热-电性能。结果表明,添加活性炭时有机质均不会泄漏;复合材料充-放热过程中温度场分布都比较均匀,热循环会使材料导热性能略有下降;此外,三种复合材料的电阻率均随压力增加而减小。     

Co掺杂对YBa2 Cu3 O7-δ电阻率与塞贝克系数的影响

用固态反应法制备了YBa2Cu3-xCoxO7-δ(x=0.0,0.1,0.2,0.5)样品,研究了Co掺杂对YBa2Cu3O7-δ高温区的电阻率和塞贝克系数的影响。随着Co含量的增加,样品的电阻率和塞贝克系数逐渐增大,从金属性导电转变为p型半导体导电。x=0.2和0.5样品的电导活化能在500K处发生突变,高温区的活化能大于低温区的活化能。通过塞贝克系数与温度的关系,计算出x=0.2和0.5样品的费米能级分别为0.02和0.12 eV。当温度高于650-700K时,氧脱附显著影响样品的电输运性质,导致电阻率和塞贝克系数随温度增加而增大。     

Cr掺杂对Nd0.7Sr0.3MnO3电磁性质的影响

我们对多晶样品Nd0.7Sr0.3Mn1-xCrxO3(x≤0.30)进行了X射线衍射谱、电阻温度关系和磁化强度测量.实验发现:随Cr掺杂量的增加,样品的电阻率变大,电阻峰温度和居里温度降低,这是由Cr的介入弱化了双交换作用所致;在x=0.10附近,电阻出现了双峰现象,在其M~T上没有发现与低温峰对应的磁性异常;在锰位磁矩与Cr含量的关系中发现,Cr掺杂对样品的磁性几乎无贡献;通过分析,我们用相分离的图象解释了有关的现象.     

液体电阻率测量装置的设计与制作

针对液体本身物理性质复杂、电阻率难以测量的问题,本文设计了一种新型液体电阻率测量装置.为有效采集被测对象的信息,对容器结构进行了巧妙设计,创新性地实现了石墨电极与容器一体化,提高了测量精度;利用传感技术采集电压、电流信号并将数据传入单片机,经单片机运算后通过液晶屏实时显示电阻率,具有快捷、准确测量的优点,在教学科研方面有一定实用价值.