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21.
Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices
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Based on the charge storage mode,it is important to investigate the scaling dependence of memory performance in silicon nanocrystal(Si-NC) nonvolatile memory(NVM) devices for its scaling down limit.In this work,we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor(CMOS) technology.It is found that the memory windows of eight kinds of test key cells are almost the same of about1.64 V @ ±7 V/1 ms,which are independent of the gate area,but mainly determined by the average size(12 nm) and areal density(1.8×10~(11)/cm~2) of Si-NCs.The program/erase(P/E) speed characteristics are almost independent of gate widths and lengths.However,the erase speed is faster than the program speed of test key cells,which is due to the different charging behaviors between electrons and holes during the operation processes.Furthermore,the data retention characteristic is also independent of the gate area.Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. 相似文献
22.
A method of fabricating Cu nanocrystals embedded in SiO2 dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically. 相似文献
23.
通过研究掺镁、掺锌和掺铟同成分铌酸锂晶体的紫外-红光双色全息存储性能,发现双色记录响应时间均比单色记录时明显缩短,最多的可减小3个数量级;双色记录灵敏度大幅度提高,在掺镁5 mol.%的晶体中可达到11 cm/J.在掺杂浓度超过抗光损伤阈值的铌酸锂晶体中,均可实现非挥发全息存储.但是,在掺镁、锌样品中,深、浅能级中心上的光栅反相,而在掺铟样品中则表现为同相.这是由于掺杂离子的种类不同,在铌酸锂晶体中形成的缺陷中心也不同所引起的.
关键词:
掺杂
铌酸锂晶体
非挥发
全息存储 相似文献
24.
根据双中心带输运模型,对(Ce,Cu):LiNbO3晶体双中心非挥发全息记录进行了理论研究与优化。推导了(Ce,Cu):LiNbO3晶体的微观参量,采用数值方法通过严格求解模拟双中心带输运方程来模拟全息记录过程。分析了记录过程中,记录与敏化光强、Ce和Cu掺杂浓度以及晶体微观参量对(Ce,Cu):LiNbO3晶体双中心全息记录的影响。发现(Ce,Cu):LiNbO3晶体非挥发全息记录中实现高衍射效率与固定效率的主导因素是深中心Cu,在记录过程中,深中心Cu建立起了很强的空间电荷场。数值模拟的结果经过实验验证,最高饱和与固定衍射效率别为60.5%和53.8%。 相似文献
25.
Bin Zhang Yu Chen Liqun Xu Longjia Zeng Ying He En‐Tang Kang Jinjuan Zhang 《Journal of polymer science. Part A, Polymer chemistry》2011,49(9):2043-2050
A new approach on usage of S‐1‐dodecyl‐S′‐(α,α′‐dimethyl‐α″‐acetic acid)trithiocarbonate (DDAT)‐covalently functionalized graphene oxide (GO) as reversible addition fragmentation chain transfer (RAFT) agent for growing of poly(N‐vinylcarbazole) (PVK) directly from the surface of GO was described. The PVK polymer covalently grafted onto GO has Mn of 8.05 × 103, and a polydispersity of 1.43. The resulting material PVK‐GO shows a good solubility in organic solvents when compared to GO, and a significant energy bandgap of ~2.49 eV. Bistable electrical switching and nonvolatile rewritable memory effect, with a turn‐on voltage of about ?1.7 V and an ON/OFF state current ratio in excess of 103, are demonstrated in the Al/PVK‐GO/ITO structure. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011 相似文献
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27.
Fluorene based donor‐acceptor polymer electrets for nonvolatile organic transistor memory device applications
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Lei Dong Han‐Sheng Sun Jau‐Tzeng Wang Wen‐Ya Lee Wen‐Chang Chen 《Journal of polymer science. Part A, Polymer chemistry》2015,53(4):602-614
Fluorene based donor‐acceptor polyimides, including poly[bis‐(4‐aminophenyl)fluorene‐hexanediamide] [PA(BAP F‐AC)], poly[bis‐(4‐aminophenyl)fluorene‐hexafluoroisopropylidenediphthalimide] [PI(BAPF‐6FDA)], poly[bis‐(4‐aminophenyl)fluorene‐oxydiphthalimide] [PI(BAPF‐ODPA)], and poly[bis‐(4‐aminophenyl)fluorene‐1,2,4,5‐cyclohexanetetracarboxylic diimide] [PI(BAPF‐HPMDA)], as charge storage layer (electret) are employed for nonvolatile memory device applications. The polyimides are consisted of electron‐donating fluorene diamine moiety (BAPF) and neutral (AC and HPMDA) or electron‐accepting (6FDA and ODPA) moieties, respectively. The memory characteristics of these devices can be tuned from the EORM (erase once and read many times) behavior [PA(BAPF‐AC)], semi‐flash [PI(BAPF‐ODPA)], [PI(BAPF‐HPMDA)], to a flash type memory [PI(BAPF‐6FDA)]. The PI(BAPF‐6FDA) devices show the largest memory window of 77 V and a long retention time over 104 s with a high Ion/Ioff current ratio of 108. This is attributed to the largest torsion angle of PI(BAPF‐6FDA) stabilizing charge transfer (CT) complexes. The write‐read‐erase‐read cycles were stably operated over 100 cycles. This work provides a new insight into the relationship between the CT effect and the nonvolatile memory behavior. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2015 , 53, 602–614 相似文献
28.
High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack
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Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) memories with novel p-SnO/n-SnO2 heterojunction charge trapping stacks (CTSs) are investigated comparatively under a maximum fabrication temperature of 280 ℃. Compared to a single p-SnO or n-SnO2 charge trapping layer (CTL), the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention. Of the two CTSs, the tunneling layer/p-SnO/n-SnO2/blocking layer architecture demonstrates much higher program efficiency, more robust data retention, and comparably superior erase characteristics. The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at -8 V/1 ms, and the ten-year memory window is extrapolated to be 4.41 V. This is attributed to shallow traps in p-SnO and deep traps in n-SnO2, and the formation of a built-in electric field in the heterojunction. 相似文献
29.
Grating spacing dependence of nonvolatile holographic recording in doubly doped lithium niobate crystals is theoretically investigated allowing arbitrary charge transport lengths. It is shown that the nonvolatile refractive index modulation initially increases with increasing grating spacing, then a saturation behavior arises because of the dominant bulk photovoltaic effect. Although different charge transport length results in different nonvolatile refractive index modulation, the grating spacing dependence of nonvolatile holographic recording obeys almost the same rules for arbitrary charge transport lengths. The experimental results obtained by recording nonvolatile holograms in LiNbO3:Cu:Ce crystals with different grating spacing are consistent with the theoretical analyses. 相似文献
30.
Youwen Liu Liren Liu De'an Liu Liangying Xu Changhe Zhou 《Optics Communications》2001,190(1-6):339-343
Nonvolatile photorefractive gratings have been recorded in LiNbO3:Cu:Ce crystals by using a He–Ne laser (633 nm) for recording and an argon ion laser (458 nm) for sensitizing. The sensitizing light increases the recording sensitivity by a−bexp(−Is/c) and saturation behavior will appear with high enough intensity of sensitizing light. The recording light increases the slope of η1/2 as a function of time during the initial stages of hologram formation by sublinear Ixr (x<1) and thus the recording light decreases the recording sensitivity. The dependence of saturation diffraction efficiency on the intensities of the recording and sensitizing light shows that there is a maximum dynamic range of the recording process. 相似文献