Structural and Theoretical Insights into the AIE Attributes of Phosphindole Oxide: The Balance Between Rigidity and Flexibility

Multiple intramolecular motions consume the excited‐state energy of luminogenic molecules upon photoexcitation and lower the emission efficiency. The low frequency rotational motion of aromatic rings can be facilely restricted by steric constraint in the condensed phase, but the high frequency bond stretching motion can hardly be suppressed by aggregation. In this work, three phosphorus‐containing heterocycles, 1,2,3,4,5‐pentaphenylphosphole‐1‐oxide (PPPO), 1,2,3‐triphenylphosphindole‐1‐oxide (TPPIO), and 1,2,3‐triphenylphosphindole (TPPI), were synthesized and characterized. Their optical properties, crystal‐packing manners, electronic features, and fluorescence dynamics were systematically investigated, and theoretical calculations were performed to decipher structure–property relationships. The results reveal that these luminogens are weak emitters in solutions but show strong emission in aggregates, exhibiting obvious aggregation‐induced emission (AIE) features. The aggregation‐insensitive stretching motion, which is dominant in PPPO, is lowered in TPPIO, enabling TPPIO to fluoresce much more efficiently than PPPO in aggregates. The stretching motion is even more lowered in TPPI, but its relatively planar conformation suffers emission quenching due to strong π–π stacking interactions in aggregates. Therefore, a twisted molecular conformation consisting of a rigid stator and a rotatable periphery is demonstrated to be a rational design for more efficient AIE luminogens.     

基于紫外或蓝光LED激发的Eu3+和Bi3+共掺杂LaMgB5O10红色荧光粉

采用固相法合成了Eu3+和Bi3共掺杂的LaMgB5O10红色荧光粉,在紫外或蓝光激发下,样品的红光强度随着Bi2O3的增加而增强.利用X射线衍射对样品的结构进行了分析,结果表明,掺入Bi2O3后,样品的结晶度更好.根据Judd-Ofelt理论计算,得到样品的内量子效率不随掺杂剂的改变而变化,约为43％.在394nm激...     

Synthesis of 5-alkoxymethyl- and 5-aminomethyl-substituted 8-hydroxyquinoline derivatives and their luminescent Al(III) complexes for OLED applications

Several 5-alkoxymethyl- and 5-aminomethyl-substituted 8-hydroxyquinolines were synthesised. Their coordination complexes with Al(III) were also synthesised. These complexes are soluble and stable in common organic solvents and show green luminescence with high quantum yields.     

Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions

Type-I and type-II band alignments were successfully controlled by changing composition and growth temperature in AlInAs/AlGaAs self-assembled quantum dots. The Al composition dependence of the photoluminescence peak shift clearly indicated the crossover from type-I to type-II band line up and a long decay time of 30 ns was obtained by time-resolved photoluminescence at 8 K for the sample with type-II band alignment grown under optimized conditions. A much longer decay component of 500 ns was also observed from the same structure, but it may be due to slow relaxation of carriers trapped in AlGaAs matrix.     

Plasma dynamics in GaAs under strong picosecond surface excitation

We have investigated the time-resolved luminescence of GaAs in air at room temperature, under strong picosecond surface excitation. The energy density was in the range 4–40 $\text{mJ}\text{cm}{}^2$ and the excitation wavelength λ_ex ? 0.53 μ. The peak temperature reached by the generated electron-hole plasma at the end of the excitation pulse amounts to T_M ? 720 K at an energy density of about 10 $\text{mJ}\text{cm}{}^2$. Further increase of the power induces surface damage on the sample. The plasma relaxes its kinetic energy at a slow rate of the order of 10¹⁰$\text{eV}\text{s}$, supporting our previous calculations which concluded that electron-phonon interactions are strongly screened by intravalley free-carrier collisions at high plasma density, so that the plasma cooling slows down.     

发蓝绿光纳米硅薄膜的快速热处理制备

使用除氢、高温成核和低温生长的三段式快速热处理方法,将常规方法制备的氢化非晶硅(a-SiH)薄膜晶化成纳米硅(nc-Si)薄膜。该薄膜在波长为457.9nm的Ar⁺激光的激发下,在室温发射出蓝绿光。     

常压MOCVD法生长的p型ZnSe及其光电特性

本文通过常压MOCVD方法,利用NH₃气作为受主掺杂源,在(100)方向的GaAs衬底上生长了ZnSe:N膜。通过测量77K温度下光致发光光谱。观测到了由于掺氮引起的自由到束缚发射(FA)和深中心复合(SA).在低掺杂浓度下FA起主要作用,随着NH₃气浓度增加,FA和SA带的强度随之增强,在重掺杂下SA带成为主要,同时带的半宽度展宽。室温下霍尔测量的结果表明。低掺杂浓度下ZnSe:N膜呈高阻态,而在高掺杂浓度下外延膜呈现P型电导,载流子浓度P～1016cm³.利用p-ZnSe/n-GaAs构成异质pn结,观测到了二极管的整流特性,进一步证实p型ZnSe的实现。     

Near-IR Luminescent Rare Earth Ion–Sensitizer Complexes

Rare earth ions, with relatively long luminescence lifetimes, have significant advantages for application in fields as varied as diagnostics and optical amplification. In diagnostics the long luminescence lifetimes allow for extremely sensitive time-gated detection, where the difference in temporal behavior of scatter and background fluorescence and the long-lived rare earth luminescence is utilized. In optical amplification the long excited-state lifetime makes it easier to obtain population inversion, a requirement for effective stimulated emission. Unfortunately the absorption cross section of rare earth ion transitions is extremely low. However, via sensitized excitation by means of a suitable organic molecule, efficient excitation is obtained. It is shown that excitation in the visible part of the spectrum can be used to excite rare earth ions which luminesce in the near-IR, such as ytterbium, neodymium, and erbium, via a fluorescein-derivative as sensitizer. The advantages of this approach are manifold. Low-cost light sources are available for the visible part of the spectrum, and interferences from the matrix (scatter, absorption) are minimal. Detection in the near-IR is almost interference-free. For optical amplification the wavelength regions around 1300 and 1550 nm, which can be covered with the neodymium and erbium complexes, respectively, are the most important for applications in optical telecommunication.     

Single violet luminescence emitted from ZnO films obtained by oxidation of Zn film on quartz glass

The photoluminescence (PL) emission properties of ZnO films obtained on quartz glass substrate by the oxidation of Zn films were studied. The strong single violet emission centering about 413-424 nm was observed in the room temperature PL spectra of the ZnO films. The intensity of violet emission increased and the peak position shift from 424 to 413 nm with increasing oxygen pressures. The violet emission was attributed to the electron transition from the valence band to interstitial zinc (Zn_i) level under low oxygen pressure conditions (50-500 Pa). Under high oxygen pressure conditions (5000-23,000 Pa), both interstitial zinc (Zn_i) and zinc Vacancy (V_Zn) were thought to be responsible for the violet emission.