首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   7527篇
  免费   1196篇
  国内免费   732篇
化学   3684篇
晶体学   58篇
力学   531篇
综合类   37篇
数学   329篇
物理学   4816篇
  2024年   10篇
  2023年   73篇
  2022年   218篇
  2021年   202篇
  2020年   225篇
  2019年   227篇
  2018年   211篇
  2017年   228篇
  2016年   296篇
  2015年   272篇
  2014年   407篇
  2013年   628篇
  2012年   479篇
  2011年   585篇
  2010年   414篇
  2009年   516篇
  2008年   511篇
  2007年   566篇
  2006年   468篇
  2005年   368篇
  2004年   319篇
  2003年   282篇
  2002年   300篇
  2001年   216篇
  2000年   208篇
  1999年   152篇
  1998年   142篇
  1997年   113篇
  1996年   89篇
  1995年   98篇
  1994年   77篇
  1993年   103篇
  1992年   63篇
  1991年   55篇
  1990年   45篇
  1989年   34篇
  1988年   34篇
  1987年   24篇
  1986年   25篇
  1985年   33篇
  1984年   32篇
  1983年   15篇
  1982年   20篇
  1981年   12篇
  1980年   12篇
  1979年   8篇
  1978年   9篇
  1977年   5篇
  1976年   9篇
  1973年   5篇
排序方式: 共有9455条查询结果,搜索用时 15 毫秒
51.
Cr-doped mullites were prepared from single-phase precursors containing up to 9.60 wt% Cr2O3 using a sol-gel technique followed by thermal treatment. Particle induced X-ray emission spectroscopy and X-ray powder diffraction were used to characterize the samples. Mullites were orthorhombic, space group Pbam. Cr doping caused the increase of unit-cell parameters. Strongest expansion was noticed along c-axis followed by a and bc/c=0.089, Δa/a=0.061, Δb/b=0.045% per mole Cr2O3). A second phase, namely θ-(Al,Cr)2O3, was revealed by XRD in the sample containing 9.60 wt% Cr2O3. The structure of mullites was refined by the Rietveld method, location of Cr3+ was performed by the EPR spectroscopy. At low chromium doping level (Cr2O3 content less than ∼5 wt%) Cr3+ ions were substituted for Al3+ in the AlO6 octahedra of the mullite structure (M1 site). For higher doping level, Cr3+ ions were additionally substituted for Al3+ in the AlO6 octahedra of the second phase [θ-(Al,Cr)2O3 at 1400 °C, or α-(Al,Cr)2O3 at 1600 °C] which segregated in the system. Substitution of Cr3+ for Al3+ on M1 site in the mullite structure resulted in increase of average distances in (M1)O6 octahedron and decrease of average distances in T*O4 tetrahedron, while average distances in TO4 tetrahedron stayed almost constant.  相似文献   
52.
利用高灵敏度的氢原子里德堡飞渡时间谱方法研究了 F H_2→HF H 反应碰撞能在5.02kJ/mol 下的交叉分子束反应态态散射动力学.所有在时间飞渡谱中被观测到的谱峰可以归属为 HF 产物的振转态结构.还观测到了明显的 HF(v’=3)前向散射,以及少许的 HF(v’=2)前向散射.  相似文献   
53.
Holography is a promising technique for power combining applications in the frequency range of short millimeter and submillimeter waves. In this paper, quasi-optical holographic power combining circuits are investigated. An equivalent network is utilized which rigorously models horn arrays and biperiodic dielectric structures in order to design computer-generated holograms. We apply the network model to a 5-element quasi-optical power combiner and demonstrate its capability. The hologram is designed for 150 GHz and has an efficiency of 92.5 % with a 90 % bandwidth of 5.3 %. With the aid of a broadband waveguide power divider and a vector field measurement system, the circuit is analyzed.  相似文献   
54.
研究了充有不同温度退火Fe基纳米晶粉芯LC回路的磁致频移特性(MFS),发现充有不同温度退火Fe基纳米晶粉芯LC回路的磁致频移不同,充有经600℃退火Fe基纳米晶粉芯LC回路的磁致频移最灵敏。  相似文献   
55.
56.
c轴定向氮化铝薄膜的制备   总被引:3,自引:0,他引:3  
龚辉  范正修 《光学学报》2002,22(8):33-936
利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。  相似文献   
57.
分子高激发振动态的动力学特性研究   总被引:1,自引:0,他引:1       下载免费PDF全文
郑敦胜  吴国祯 《物理学报》2002,51(10):2229-2232
运用经典哈密顿代数方法,结合单摆的运动特点表示两个化学键之间的振动耦合.对水分子高激发态下两个氧氢键(O—H)伸缩振动动力学的研究结果表明,靠近分界线的中间能级的相空间中较易出现混沌轨道,而较高或较低能级的相空间中则具有比较规则的周期运动 关键词: 高激发振动 共振 混沌  相似文献   
58.
This review paper deals with an overview of molecule-based magnetism as a rapidly developing interdisciplinary field, topological symmetry rule as the first principle of spin alignment in organic open-shell systems in the ground state, the proposal of organic through-bond 1D and 2D ferro- and superparamagnets and the detection of the first organic high-spin molecule, m-phenylenebis(phenylmethylene) in the quintet ground state (S = 2), followed by extended organic high-spin systems with π-conjugation such as aromatic hydrocarbons having S = 3, 4, 5. The paper also describes a theoretical approach to the understanding of electronic spin structures of organic high-spin molecules by invoking both Heisenberg and Hubbard model Hamiltonians, weakly interacting intramolecular high-spin systems from both experimental and theoretical sides, the spin density distribution of the first organic high-spin molecule in terms of electron- nuclear multiple resonance spectroscopy and the detection and characterization of ionic high-spin hydrocarbons, emphasizing the establishment of high spin chemistry underlying organic molecular magnetism.  相似文献   
59.
Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(  1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs.  相似文献   
60.
The results of the analysis of the stability of stationary solutions of wave equations discribing a behavior of the nonlinear Fabry-Perot interferometer with a saturated paramagnetic filling are presented in this paper. The cases when paramagnetic medium is characterized by a homogeneously and nonhomogeneously broadened line of the magnetic resonance have been considered. Areas of unstable behavior of these characteristics of the resonance structure have been found.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号