类锂离子与软X射线激光研究有关的跃迁波长和振子强度

本文用多组态HXR自洽场方法和优化以Slater径向积分法相结计算了类锂离子(Z=13～17,19)1s~2nl~2LJ(2≤n≤5,0≤l≤4)能级之间的跃迁波长和振子强度,并和实验进行了比较。就软X射线激光跃迁4f—3d而言,本文计算的波长值比其它文献的计算值更接近于观测值。     

铜到钼的类钠离子能级结构及软X射线光谱理论计算

本文采用Hartree-Fock自洽场方法,从理论上计算了铜到钼的类钠离子1s~22s~22p~6nl(n=3～6,l=O～5)各能级能量。给出了有可能实现软X射线激光的跃迁(5g—4f,5f—4d,6g—4f,6f—4d)的光谱性质:跃迁波长、振子强度,并和实验值进行了比较,跃迁波长的相对误差不超过千分之二。从计算结果可知,Se的6f—4d跃迁,Br的6g—4f跃迁,Zr的5f—4l跃迁,Nb的5g—4f跃迁都已进入水窗波段。     

Force-field dependence of the conformational properties of α,ω-dimethoxypolyethylene glycol

A molecular dynamics (MD) study of α,ω-dimethoxypolyethylene glycol has been carried out under various conditions with respect to solvent composition, ionic strength, chain length, force field and temperature. A previous MD study on a 15-mer of polyethyleneglycol (PEG) suggested a helical equilibrium structure that was stabilised by hydrogen bonding and bridging water molecules. Experiments show that PEG is highly soluble in water, and indicate that clustering is not favoured. In the present study using different force fields, the GROMOS force fields 45A3 and 53A6, a variation on the latter 53A6_OE, and a force field by Smith et al. produced different results. For the GROMOS force fields 45A3 and 53A6 no helical structure was found, but formation of more or less compact random coils in aqueous solution due to hydrophobic interactions was observed. For the other two force fields used, α,ω-dimethoxypolyethylene glycol stayed flexible and more or less elongated in aqueous solution, more in agreement with experimental observations and the previous MD study.     

Improved techniques for the calculation of ab initio ion-neutral interaction potentials: application to coinage metal ions interacting with rare gas atoms

Ab initio values for the potential energy functions for ion–neutral interactions can be tested by comparison with gaseous ion transport coefficients, but only if special care is taken to compute the interaction potentials accurately over wide ranges of internuclear separation. This is illustrated here by a reanalysis of the ab initio values for the coinage metal ions interacting with rare gas atoms, precise calculations of the transport cross sections over extremely wide ranges of energy, and similarly precise calculations of the zero-field ion mobilities as functions of gas temperature and the field-dependent ion mobilities at various fixed temperatures. The calculations indicate that the mobilities for Ag⁺(¹S) moving in Ne or Ar can distinguish between the existing, very similar ab initio potentials. They also show that substantial differences exist among the mobilities of the coinage metal anions and the ground and excited states of the cations. The techniques implemented are recommended for future ab initio calculations.     

The fundamental features and characteristics of discharge and plasma ion sources

An analysis of some of the fundamental and special physical processes occurring in discharge and plasma ion sources is presented.

The main purpose of the lecture is to present to the users of ion sources some key elements of information, of which not all may be generally recognised and which hopefully will be of value for a better understanding of the operational problems related to the complex behaviour of discharge and plasma ion sources.     

Copper (50 MeV) and Oxygen (84 MeV) Ion Irradiation Probed Thermal,Structural and Optical Behavior of Polyethylene Terephthalate

Polyethylene terephthalate (PET) films of 50?μm thickness were exposed to swift-heavy 50?MeV copper and 84?MeV oxygen ions, with fluence varying from 1?×?10¹¹ to 1?×?10¹³ ions cm^?2. Differential scanning calorimetry (DSC), X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) and UV-visible spectroscopic techniques were used to characterize the irradiated samples. The XRD and DSC analysis indicated the loss of crystallinity during/after the irradiation. The FTIR spectra revealed the formation of alkyne end groups, C═C groups and structural deformation with increase of ion fluence. Considerable reduction in the value of the optical bandgap was inferred from the study of the UV-visible absorption curves.     

Spectroscopic Investigation of Tungsten Ions in Lead Scandium Phosphate Glass System

Lead scandium phosphate glasses (PbO-Sc₂O₃-P₂O₅) containing different concentrations of tungsten oxide (WO₃) ranging from 0 to 5 mol% were prepared. A number of studies, viz. differential thermal analysis (DTA), infrared spectra, optical absorption, and electron spin resonance (ESR) spectra, have been carried out. The results of DTA indicated the highest glass forming ability for the glass containing 5 mol% of WO₃. The results of spectroscopic studies have been analyzed in light of different oxidation states of tungsten ions.     

Conversion Electron Moessbauer Spectroscopie Studies on Ion Implanted Iron Layers

Conversion electron Moessbauer spectroscopy (CEMS) is a method very suitable for the study of ion implanted iron. It is demonstrated on nitrogen and phosphorus implanted iron layers. Using this technique not the 14.4-keV-gamma-rays as in the case of the conventional Moessbauer transmission experiments but the conversion and Auger electrons are detected. These electrons have a maximum energy of 7.3 keV. The Moessbauer signal can be obtained from a surface layer of about 300 nm. But the main fraction of the signal, namely 65%, comes from the first 50 nm. This range is just interesting for ion implantation. Depending on the test conditions different iron nitrides are formed by the nitrogen implantation and the phosphorus implantation can result in both amorphization and compound formation in the implanted layer.     

Strain modification of AlGaN layers using swift heavy ions

Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated with 150 MeV Ag ions at a fluence of 5×10¹² ions/cm². The samples used in this study are 50 nm Al_0.2Ga_0.8N/1 nm AlN/1 μ m GaN/0.1 μ m AlN grown on SI 4H-SiC. Rutherford backscattering spectrometry/channeling strain measurements were carried out on off-normal axis of irradiated and unirradiated samples. In an as-grown sample, AlGaN layer is partially relaxed with a small tensile strain. After irradiation, this strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechanneling parameter shows E ^1/2 dependence, which corresponds to the dislocations. Defect densities were calculated from the E ^1/2 graph. As a result of irradiation, the defect density increased on both GaN and AlGaN layers. The effect of irradiation induced-damages are analyzed as a function of material properties. Observed results from different characterization techniques such as RBS/channeling, high-resolution XRD and AFM are compared and complemented with each other to deduce the information. Possible mechanisms responsible for the observations have been discussed in detail.