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71.
For the methylsilsesquioxane film whose optical birefringence is almost zero, it was recently reported that its vertical thermal expansion coefficient (CTE) was approximately one order of magnitude larger than the lateral CTE. Though the birefringence is not an absolute predictor of anisotropic behavior, the discrepancy in both the CTEs was so remarkable that it was essential to investigate whether the anisotropy was intrinsic property or not. If the effect of Poisson's ratio is considered in the calculation of the vertical CTE and when elastic modulus measured by surface acoustic wave spectroscopy is used in the assessment of the lateral CTE, both the CTEs are coincident with each other. Therefore, it can be concluded that the discrepancy in the CTEs can be attributed to a higher in‐plane polymer chain orientation but it can also arise from the misleadingly assumed modulus and Poisson's ratio. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3109–3120, 2006 相似文献
72.
利用溶胶凝胶法在SiO2Si衬底上沉积高取向的V2O5薄膜,在压强低于2Pa,温度高于400℃的条件下,对V2O5薄膜进行真空烘烤,获得了电阻率变化3个数量级以上、弛豫宽度为62℃的VO2多晶薄膜.以X射线衍射(XRD)、扫描电子显微镜(SEM)图和电阻率转换特性等实验结果为依据,详细分析了溶胶凝胶薄膜在真空烘烤时从V2O5向VO2的转化,它经历了从VnO2n+1(n=2,3,4,6)到VO2的过程.实验证明,根据选择合适的成膜热处理条件和真空烘烤条件是实现溶胶凝胶V2O5结构向VO2结构成功转换的关键
关键词:
溶胶-凝胶法 氧化钒薄膜 VO2膜转换特性 相似文献
73.
Takuya Hashimoto Koichi Kitazawa Masaaki Nakabayashi Tadashi Shiraishi Youichi Suemune Takakazu Yamamoto Hideomi Koinuma 《应用有机金属化学》1991,5(4):325-330
For low-temperature deposition of oxide films relating to Bi-Sr-Ca-Cu-O superconductors, photo-absorption and -decomposition properties were examined with respect to copper and alkaline-earth ß-diketonates. It was confirmed that all ß-diketonates examined were promising as source materials for photochemical vapour deposition (photo-CVD) using a low-pressure mercury lamp, in view of their large light absorption coefficients at wavelength 254 nm. The light irradiation was effective for the formation of highly crystalline oxide films at temperatures below 600 °C. By combining two sources, Ca2CuO3 and SrCuO2 films were prepared. Photo-CVD of c-axis oriented Bi2Sr2CuOx film was achieved by the irradiation of ternary sources of Bi(C6H5)3 and strontium and copper ß-diketonates at 500 °C. 相似文献
74.
75.
ASTUDYOFJ-INTEGRALOFTHEORTHOTROPICCOMPOSITEMATERIALWangAi-qin(王蔼勤);FengBao-lian(冯宝莲);YangWei-yang(杨维阳)(TaiyuanHeavyMachinery.... 相似文献
76.
c轴定向氮化铝薄膜的制备 总被引:3,自引:0,他引:3
利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。 相似文献
77.
X.T Zhang Y.C LiuZ.Z Zhi J.Y ZhangY.M Lu D.Z ShenW Xu X.W FanX.G Kong 《Journal of luminescence》2002,99(2):149-154
The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect. 相似文献
78.
79.
反应离子镀光学薄膜的微观结构分析 总被引:2,自引:1,他引:1
用反应离子镀方法制备了TiO2单层膜及TiO2/SiO2多层膜,用透射电子显微镜分别观察了由反应离子镀方法及传统蒸镀法二种不同工艺制得的TiO2单层膜及TiO2/SiO2多层膜的断面结构,并对TiO2单层膜进行了喇曼分析和卢瑟福背散射分析。 相似文献
80.
H. Kuramochi J. Okabayashi F. Takano M. Mizuguchi T. Manago H. Akinaga 《Surface science》2004,550(1-3):192-198
Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(
1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs. 相似文献