氧化钪中Ti,Mo,W,V,Zr等难熔杂质光谱分析

本用提高样品蒸发速率的方法提高氧化钪中难熔杂质光谱分析灵敏度。采用一种特殊的阴极设计，配合使用Ｎ２＋Ａｒ气氛控制，在旋流气室中放电激发，取样仅５ｍｇ的条件下，光谱测定氧化钪中难烷质Ｔｉ，Ｚｒ，Ｍｏ，Ｗ，Ｖ灵敏度可达（１－３）×１０＾－４％。测定的相对标准偏差为９％－２７％。     

UPML formulation for truncating conductive media in curvilinear coordinates

This work presents a formulation based on UPML for truncating conductive media by using a local and non-orthogonal coordinate system to solve Maxwell’s equations by the FDTD method. The detailed procedure for obtaining the UPML equations for this case is shown and the complete equation set is provided.     

A simple construction of optimal estimation in multivariate marginal Cox regression

The multivariate extension of the Cox model proposed by Wei,Lin and Weissfeld in 1989 has been widely used for analyzing multivariate survival data.Under the model assumption,failure times from an individual are assumed to marginally follow their respective proportional hazards regression relation,leaving the joint distribution completely unspecified.This paper presents a simple approach to efficiency improvement through segmentation of stochastic integrals in the marginal estimating equations and incorporation of the limiting covariance structure.It is shown that when partition of the time interval is done at a suitable rate,the resulting estimator is consistent and asymptotically normal.Through the reproducing kernel Hilbert space arising from the covariance function of the limiting Gaussian process,it is also shown that the proposed estimator is asymptotically optimal within a reasonable class of estimators under marginal specification.Simulations are conducted to assess the finite-sample performance of the proposed method.     

密封恒温分光光度法快速测定化学需氧量

建立了密封恒温消解样品,测定化学需氧量（CDDcr)的分光光度法。应用正交试验法确定了密封恒温法消解试样的最佳条件,此方法有机物的氧化率为98.33%-99.50%。CODcr值在0-800mg/mL范围内符合比耳定律。样品测定的相对标准偏差为0.39%（n=12),加标回收率为97.50%-99.56%。用该法测得的CODcr值与标准回流法所得结果一致。     

Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

This paper studies boron contamination at the interface between the p and i layers of μ c-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μ c-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μ c-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.     

40Ar+238U 实验介绍

主要介绍了利用兰州重离子加速器提供的270 MeV的40Ar离子束轰击238U靶，通过熔合蒸发反应进行试合成Z=110附近的新同位素的实验情况。分析了目前关于超重核研究的现状并描述了这次实验的目的、 可行性分析、 实验装置以及实验过程等。本次实验仍然用氦喷嘴技术对产物进行传输， 并用一套具有数对探测器组的转轮收集探测系统对产物进行收集和测量。 The state of the experiment to produce the new isotopes around Z=110 are presented in this paper. The emphasis is laid upon introducing the experiment purpose, the set up and the feasibility for producing this objective nuclide. In the experiment the new isotopes were produced by the complete fusion evaporation reaction of 238U with 270 MeV 40Ar at the Sector Focus Cyclotron (SFC) of Heavy Ion Research Facility in Lanzhou(HIRFL). The reaction products were also transported and collected by using the helium jet technique and rotating wheel apparatus.     

基于微机械加工技术的双腔型生物传感器

利用微机械加工技术研制了具有三维结构的腔型传感器，双腔型工作电极与Ag/Agcl参比电极集成在同一微芯片上。考察了微腔型电极的电化学特性及其对H2O2含量的测定。并以此为基础电极制备了半乳糖、葡萄糖双腔型生物传感器。结果表明，该传感器可同时测定半乳糖、葡萄糖双组分，线性上限分别为4．5mmol/L和4．0mmol/L。而且在测试双组分过程中，没有观察到明显的交叉干扰现象。     

激光打靶过程中的电磁脉冲特性

为诊断激光打靶产生的电磁脉冲信号分布,选取环天线作为主要电磁脉冲信号采集装置,对靶室内外信号同时进行测试。从天线设计制作到天线标定,描述了脉冲诊断系统的搭建。通过对信号进行采集及处理,对比分析了靶室外、法兰口及靶室内脉冲信号的频域特性和强度。得出靶室内受到电磁脉冲辐射强度最大且频谱分布最广,其次是法兰口,靶室外电磁脉冲信号最弱。总结多次激光打靶电磁脉冲信号频域分布,可看出波峰主要出现在0.5,1.2,3 GHz。电磁脉冲时域结果规律性展示出脉冲持续约100 ns,因靶室内回波振荡,电磁脉冲信号于几ns处及几十ns处有较明显峰值蔟。     

不锈钢管道低温溅射镀TiN薄膜技术

 设计了一套适用于加速器细长管道真空室的低温溅射镀TiN薄膜装置。利用该装置，对86 mm×2 000 mm的不锈钢管道真空室进行溅射镀TiN膜实验，并对镀膜实验结果进行分析，得到了适用于加速器管道真空室内壁溅射镀TiN膜的表面处理参数。样品测试结果表明：在压强为80～90 Pa、基体温度为160~180 ℃的镀膜参数下，不锈钢管道内壁获得的TiN薄膜最佳，薄膜沉积速率为0.145 nm/s。镀膜后真空室的二次电子产额明显降低。     

小间隙高放大多丝室及其放电机制

对以强猝灭气体工作的小间隙多丝室及其放电机制进行了研究,实验表明,因为工作在饱和模式区,这种室同时具有很高的气体放大和相当快的时间特性.文中探讨了放电机制,雪崩中空间电荷效应以及电离光子的产生和作用是重要的因素,而其中后一因素又受到强猝灭气体的抑制.