CdSxSe1-x半导体微晶掺杂玻璃在抗共振环APM激光器中不能压窄脉

本文对具有较大非线性系数,较快非线性响应和回复时间的CdS_xSe_1-x半导体微晶掺杂玻璃能否在挽共振环(亦称为非谐振环)APM激光器中有效地压缩脉宽等问题做了详尽的理论与实验的切耐与分析。理论计算与实验研究的结果均表明:在抗共振环APM激光器中,应用CdS_xSe_1-x半导体微晶掺杂玻璃不能使超短光脉冲宽度被压窄。     

Zn1-xTMxO (TM=Al,Ga, In)导电性能的模拟计算

基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 构建了未掺杂与相同掺杂浓度的Zn_1-xTM_xO (TM=Al, Ga, In) 超胞模型,分别对模型进行了几何结构优化、态密度分布和能带分布的计算. 结果表明, 分别高掺杂 (Al, Ga, In) 相同原子分数3.125 at%的条件下, In掺杂对ZnO导电性能最好的结果, 计算结果和实验结果相一致. 关键词： (Al,Ga,In) 高掺ZnO 导电性能 第一性原理     

Fluorinated Eu‐Doped SnO2 Nanostructures with Simultaneous Phase and Shape Control and Improved Photoluminescence

Fluorinated Eu‐doped SnO₂ nanostructures with tunable morphology (shuttle‐like and ring‐like) are prepared by a hydrothermal method, using NaF as the morphology controlling agent. X‐ray diffraction, field‐emission scanning electron microscopy, high‐resolution transmission electron microscopy, X‐ray photoelectron spectroscopy, and energy dispersive spectroscopy are used to characterize their phase, shape, lattice structure, composition, and element distribution. The data suggest that Eu³⁺ ions are uniformly embedded into SnO₂ nanocrystallites either through substitution of Sn⁴⁺ ions or through formation of Eu‐F bonds, allowing for high‐level Eu³⁺ doping. Photoluminescence features such as transition intensity ratios and Stark splitting indicate diverse localization of Eu³⁺ ions in the SnO₂ nanoparticles, either in the crystalline lattice or in the grain boundaries. Due to formation of Eu‐F and Sn‐F bonds, the fluorinated surface of SnO₂ nanocrystallites efficiently inhibits the hydroxyl quenching effect, which accounts for their improved photoluminescence intensity.     

Mn掺杂Zn-In-S量子点的制备及发光性质研究

制备了Mn掺杂Zn-In-S量子点并研究了Zn/In的量比和反应温度对其发光性质的影响。在Mn掺杂的Zn-In-S量子点的发光谱中观测到一个600 nm发光带。通过改变Zn/In的量比,掺杂量子点的吸收带隙可从3.76 e V(330 nm)调谐到2.82 e V(440 nm),但600 nm发光峰的波长只有略微移动。这些掺杂量子点的最长荧光寿命为2.14 ms。当反应温度从200℃增加到230℃时,掺杂量子点的发光强度增加并达到最大值;而继续升高温度至260℃时,发光强度迅速减弱。此外,测量了Mn掺杂Zn-In-S量子点的变温发光光谱。发现随着温度的升高,发光峰位发生蓝移,发光强度明显下降。分析认为,Mn掺杂Zn-In-S量子点的600 nm发光来自于Mn2+离子的4T1和6A1之间的辐射复合。     

Stable single longitudinal mode fiber ring laser based on polarization maintaining erbium doped fiber

A stable single longitudinal mode (SLM) fiber ring laser that incorporates polarization maintaining erbium doped fiber (PM EDF) acting as gain medium and saturable absorber is proposed and demonstrated. Both theoretical deviation and experimental result prove that optical intensity is time invariant when the laser operates in single longitudinal mode, the SLM operation can be approximately verified by optical intensity analysis, which is practical to analyze longitudinal mode in the application of engineering. The linewidth of the fiber ring laser is measured by the delayed self-heterodyne interferometery, and an acousto-optic frequency shifter is employed to shift the lasing frequency and eliminate zero frequency interfere. The SLM operation is verified by the scanning Fabry–Perot interferometer, whereas the lasing frequency drift slowly during a period of 2 h, PM EDF is proved to be effective on suppressing mode hopping and selecting longitudinal mode.     

A comparative study on structural and optical properties of ZnO and Al-doped ZnO thin films obtained by ultrasonic spray method using different solvents

Transparent conducting ZnO and Al doped ZnO thin films were deposited on glass substrate by ultrasonic spray method. The thin films with concentration of 0.1 M were deposited at 350 °C with 2 min of deposition time. The effects of ethanol and methanol solution before and after doping on the structural, optical and electrical properties were examined. The DRX analyses indicated that ZnO films have nanocrystalline nature and hexagonal wurtzite structure with (1 0 0) and (0 0 2) preferential orientation corresponding to ZnO films resulting from methanol and ethanol solution, respectively. The crystallinity of the thin films improved with methanol solution after doping to (0 0 2) oriented. All films exhibit an average optical transparency about 90%, in the visible range. The band gaps values of ZnO thin films are increased after doping from 3.10 to 3.26 eV and 3.27 to 3.30 eV upon Al doping obtained by ethanol and methanol solution, respectively. The electrical conductivity increase from 7.5 to 15.2 (Ω cm)⁻¹ of undoped to Al doped ZnO thin films prepared by using ethanol solution. However, for the methanol solution; the electrical conductivity of the film is stabilized after doping.     

衬底位置对化学气相沉积法制备的磷掺杂p型ZnO纳米材料形貌和特性的影响

采用化学气相沉积方法,在无催化剂的条件下,通过改变衬底位置在Si(100)衬底上制备出了高取向的磷掺杂ZnO纳米线和纳米钉.测试结果表明,当衬底位于反应源上方1.5 cm处时,所制备的样品为钉状结构,而当衬底位于反应源下方1 cm处时样品为线状结构.对不同形貌磷掺杂ZnO纳米结构的生长机理进行了研究.此外,在ZnO纳米结构的低温光致发光谱中观测到了一系列与磷掺杂相关的受主发光峰.还对磷掺杂ZnO纳米结构/n-Si异质结I-V曲线进行了测试,结果表明,该器件具有良好的整流特性,纳米线和纳米钉异质结器件的开启电压分别为4.8和3.2 V.     

2μm波段全光纤保偏被动锁模掺铥光纤激光器

报道了2μm波段的全光纤保偏锁模掺铥光纤激光器,通过在法布里-珀罗(F-P)腔内加入半导体可饱和吸收镜做为被动锁模器件,采用主振-放大构型,获得了最高输出平均功率为1.08W,重复频率为10.24MHz,脉冲宽度为15.24ps,中心波长为2054.68nm,光谱宽度约为0.3nm的2μm线偏振激光脉冲输出,激光脉冲的消光比为24.17dB。     

采用紫外光提高双掺杂铌酸锂晶体中全息记录的灵敏度和光栅强度

提出了一种在双掺杂铌酸锂晶体中用调制的双紫外光进行非挥发全息记录的方法。与通常的用紫外光敏化的非挥发全息记录相比,这种方法可以大幅度地提高光栅强度和记录灵敏度。联立双中心物质方程和双光束耦合波方程,数值分析了光栅强度和衍射效率随时间的变化并讨论了掺杂浓度和记录光强对紫外光非挥发全息记录机制下光折变效应的影响。研究发现,紫外光记录得到的深浅中心的光栅具有相同的相位,总的光栅（深浅中心光栅的叠加）强度为两光栅强度之和,固定过程中深中心的光栅得到增强;增大深浅中心掺杂的浓度可以提高光栅强度,增大记录紫外光的光强可以增加光栅的强度和记录灵敏度。理论模拟可以证实并预测实验结果。     

DMRG Studies on Properties of Undoped and Doped Molecule-Based Ferromagnetic Chain

By using density matrix renormalization group （DMRG） method a model for organic molecule-based ferromagnetic chain is proposed. It is found that the ground states of Undoped and doped systems both exhibit ferrimagnetic ordering. The e-e repulsion plays an important role in the stability of the ferromagnetic state either in doped system or undoped system. For the undoped system, each unit cell coatains half of the total spins, which is consistent with Lieb＇s theorem. It is convinced that when the system is doped with one electron, a charge density wave is excited, which decreases the amplitude of spin density wave,therefore acting against the stability of ferromagnetic state.