大气湍流随机相位差的相关解调算法研究

根据大气光学湍流的光纤干涉测量技术原理及其信号表现形式,针对湍流相位变化的随机性和复杂性,提出了能够实时解调湍流随机相位差的相关解调算法,数值模拟了固定相位差、波形相位差以及符合湍流频谱特征的随机相位差的解调.结果表明,此算法的绝对误差小于10-3,满足湍流测量的要求.该研究为实现光学湍流相位差的动态检测提供了必要的理...     

单壁碳纳米管内流体流动的手性效应

纳米尺度范围内流道分子结构形成的粗糙度将会影响其中的流体流动。本文采用分子动力学方法,以氩为工质,模拟了不同手性的单壁碳纳米管（SWCNT）内流体的流动。结果表明：由于范德瓦耳斯力的作用,流体分子与壁而间有一定的距离。可以看出在壁面附近有两个明显的分层,这是纳米流动中持有的流体密度分层现象。由于不同手性碳纳米管的分子排...     

双螺旋与中间搭接螺旋折流板换热器性能研究

采用数值模拟方法研究了40°螺旋角时螺旋折流板换热器双螺旋和中间搭接两种折流板布置形式对壳程性能与螺旋流动的影响,并与30°和40°螺旋角时单螺旋连续搭接结构的进行了对比.结果表明,40°螺旋角时双螺旋和中间搭接结构会强化壳程流体的螺旋流动,使同流量下壳程换热系数与压降增加,但同压降下的换热系数显著下降且均低于30°螺...     

基于DES方法的平板孤立冷却孔数值模拟研究

本文运用DES(Detached-Eddy Simulation)分离涡方法,对吹风比为0.51和1.04的平板孤立直圆孔和弯圆孔下游的换热特性和漩涡结构进行了数值研究,并简要分析了下游涡量场的结构。模拟结果显示,预测的壁面温度场的趋势与实验值吻合较好;与RANS方法相比,DES方法得到了更加丰富的流场细节和旋涡结构,同时再现了冷却孔下游具有流场的间歇性,对进一步理解和研究冷却孔下游流场内的旋涡结构提供了参考。     

自耦合射流强化掺混的数值研究

针对同向两股气流掺混的某一特定物理模型,对自耦合射流作用下的气流掺混过程进行了数值模拟研究.与未施加自耦合射流激励的掺混过程相比,自耦合射流周期性的吹/吸诱导流场内产生复杂的大尺度涡系结构,使得同向两股气流形成对流型混合,有效缩减了主流核心区长度;相对于在燃烧室单侧放置激励器的方式,双侧自耦合射流激励时温度均匀分布线较...     

A Monte Carlo study for the shielding of γ backgrounds induced by radionuclides for CDEX

The CDEX (China Dark matter EXperiment) Collaboration will carry out a direct search for WIMPs (Weakly Interacting Massive Particles) using an Ultra-Low Energy Threshold High Purity Germanium (ULE-HPGe) detector at the CJPL (China JinPing deep underground Laboratory). A complex shielding system was designed to reduce backgrounds and a detailed GEANT4 Monte Carlo simulation was performed to study the achievable reduction of γ rays induced by radionuclides and neutron backgrounds by D(γ,n)p reaction. Furthermore, the upper level of allowed radiopurity of shielding materials was estimated under the constraint of the expected goal. Compared with the radiopurity reported by other low-background rare-event experiments, it indicates that the shielding used in the CDEX can be made out of materials with obtainable radiopurity.     

Drift field improvement and test in a GEM-TPC prototype

With the help of Maxwell, Ansys and Garfield, a simulation of the electric field and the deviation of electron drift in the drift volume of a GEM-TPC prototype has been accomplished under the following conditions: Field Cages with one-side and double-side strips, with and without a guard ring. The advantage and necessity of a Field Cage with mirror strips and a guard ring were foreseen. According to the simulation results, TU-TPC was modified and tested; a larger effective area and better resolution were achieved.     

A novel simulation method to evaluate the collection performance of a monolithic active pixel sensor

A novel simulation method is presented in this paper to evaluate the collection performance of monolithic active pixel sensor (MAPS) devices for minimum ionizing particle tracking. A simplified 3D matrix pixel structure is built using the computer aided design software Sentaurus. The virtual device is then divided into hundreds of parts and an independent customized X photon model is involved in each part to simulate the conditions under ⁵⁵Fe radiation. After data processing and analysis, charge collection efficiency, collection time and diffusion conditions can be estimated in detail. In order to verify the reliability of the method, comparisons are made between the simulations and experiments. Although there are some defects, it can be concluded that the proposed idea is a feasible method for the evaluation of the MAPS collection performance.     

Radiation induced inter-device leakage degradation

The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.     

Monte Carlo simulation of magnetic phase transitions in Mn-doped ZnO

The magnetic properties of Mn-doped ZnO semiconductor have been investigated using the Monte Carlo method within the Ising model. The temperature dependences of the spontaneous magnetization, specific heat and magnetic susceptibility have been constructed for different concentrations of magnetic dopant Mn and different carrier concentrations. The exact values of Mn concentration and carrier concentration at which high temperature transition occurs are determined. An alternative for the explanation of some controversies concerning the existence and the nature of magnetism in Mn diluted in ZnO systems is given. Other features are also studied.