溶液连续过滤快速生长KDP晶体及其品质分析

设计溶液实时连续过滤装置用于降温法快速生长KDP晶体.采用高亮度激光照射分析对比晶体内部的散射点密度,以同步辐射为光源的X射线形貌成像技术探测晶体内部的生长缺陷,并测定晶体三倍频激光(355 nm)的损伤阈值.实验结果显示,溶液连续过滤法生长的KDP晶体中包裹体和位错的密度明显降低,晶体的激光损伤阈值提高了30%.     

Path integration in conical space

Quantum mechanics in conical space is studied by the path integral method. It is shown that the curvature effect gives rise to an effective potential in the radial path integral. It is further shown that the radial path integral in conical space can be reduced to a form identical with that in flat space when the discrete angular momentum of each partial wave is replaced by a specific non-integral angular momentum. The effective potential is found proportional to the squared mean curvature of the conical surface embedded in Euclidean space. The path integral calculation is compatible with the Schrödinger equation modified with the Gaussian and the mean curvature.     

Discrete dislocation plasticity analysis of the wedge indentation of films

The plane strain indentation of single crystal films on a rigid substrate by a rigid wedge indenter is analyzed using discrete dislocation plasticity. The crystals have three slip systems at ±35.3^° and 90^° with respect to the indentation direction. The analyses are carried out for three values of the film thickness, 2, 10 and , and with the dislocations all of edge character modeled as line singularities in a linear elastic material. The lattice resistance to dislocation motion, dislocation nucleation, dislocation interaction with obstacles and dislocation annihilation are incorporated through a set of constitutive rules. Over the range of indentation depths considered, the indentation pressure for the 10 and thick films decreases with increasing contact size and attains a contact size-independent value for contact lengths . On the other hand, for the films, the indentation pressure first decreases with increasing contact size and subsequently increases as the plastic zone reaches the rigid substrate. For the 10 and thick films sink-in occurs around the indenter, while pile-up occurs in the film when the plastic zone reaches the substrate. Comparisons are made with predictions obtained from other formulations: (i) the contact size-independent indentation pressure is compared with that given by continuum crystal plasticity; (ii) the scaling of the indentation pressure with indentation depth is compared with the relation proposed by Nix and Gao [1998. Indentation size effects in crystalline materials: a law for strain gradient plasticity. J. Mech. Phys. Solids 43, 411-423]; and (iii) the computed contact area is compared with that obtained from the estimation procedure of Oliver and Pharr [1992. An improved technique for determining hardness and elastic-modulus using load and displacement sensing indentation experiments, J. Mater. Res. 7, 1564-1583].     

镍基单晶高温合金γ/γ′（001）相界面上原子构型的分子动力学研究

用分子动力学方法研究了镍基单晶高温合金γ/γ′（001）相界面上三种各具特征的原子堆垛结构. 能量学计算发现，存在最优构型，动力学模拟显示不同构型的界面弛豫后，在相界面上都“成对”出现刃型错配位错. 相关计算表明体系能量、界面形成能及弛豫能都依赖于界面原子堆垛特征，而几何特征则具共性，即不同原子构型的界面具有同一的应力释放模式.     

Superheat of silicon crystals observed by live X-ray topography

In-situ observations of Si crystal growth and melting have been carried out by live X-ray diffraction topography. Superheated solid states beyond the melting point was observed for dislocation-free crystals with melting in their inside. Dislocations were found to impede superheat and to melt the crystal without an appreciable superheating. A slightly superheated state accompanying melting removes all dislocations including immobile ones by their climb motion. It is proposed that self-interstitials needed for the volume change by melting are supplied by climb of dislocations, in contrast to dislocation-free crystals creating the interstitials thermally. In real crystal growth, remelting occurs naturally by melt convection and acts to make the growing crystal dislocation-free.     

Fluorescence confocal polarizing microscopy: Three-dimensional imaging of the director

Much of the modern understanding of orientational order in liquid crystals (LCs) is based on polarizing microscopy (PM). A PM image bears only two-dimensional (2D) information, integrating the 3D pattern of optical birefringence over the path of light. Recently, we proposed a technique to image 3D director patterns by fluorescence confocal polarizing microscopy (FCPM). The technique employs the property of LC to orient the fluorescent dye molecules of anisometric shape, added in small quantities to the LC. In LC, smooth director deformations do not alter mass density of the material. Thus the density of dye is also uniform across the sample, except, perhaps, near the surfaces or at the cores of topological defects. In polarized light, the measured fluorescence signal is determined by the spatial orientation of the molecules rather than by dye concentration (as in regular biological samples stained with tissue-specific dyes). The contrast is enhanced when both excitation and detection of fluorescence light are performed in polarized light. This short review describes the essence of FCPM technique and illustrates some of its applications, including imaging of Frederiks electric-field induced effect in a nematic LC and defects such as dislocations in cholesteric LCs.     

Emission of dislocations from grain boundaries by grain boundary dissociation

In this article, we examine the conditions that favour the emission of Shockley partial dislocations (SPDs) that standoff from a grain boundary (GB) plane by a few lattice parameters as part of the atomic structure of some GBs. To do so, we consider GBs to be formed by the operation of arrays of intrinsic grain boundary dislocations (GBDs) that create the tilt and twist misorientation, and the lattice mismatch between the two crystal grains adjoining the GB. The conditions to be considered that favour SPDs are the following: (1) Frank’s rule, (2) the proper sequential arrangement of partial dislocations to bound an intrinsic stacking fault and (3) the equilibrium stand-off distance (ESD). We apply an isotropic elasticity analysis to compute the ESD, in the absence of an applied stress, for SPDs emerging from asymmetric tilt GBs in two FCC metals, Cu and Al. The ESD is shown to be dependent on the glide plane orientation relative to the GB plane and on the position of the glide planes, relative to the position of the GBDs. An applied stress increases the ESD up to a critical stress that removes the SPDs without limit from the GB. We examine the effect of the stacking fault energy on the ESD and critical stress. The critical stress is effectively linearly dependent on the stacking fault energy. Finally, we present results of atomistic simulations of asymmetric tilt Σ11[1?0?1]{4?1?4}||{2?5?2} GBs in Cu bicrystal models subject to shock loading that behave in a manner similar to the elasticity predictions. The atomistic simulations reveal additional behaviour associated with elastic incompatibility between the two grains in the bicrystal models.     

Plastic deformation properties of Zr–Nb–Ti–Ta–Hf high-entropy alloys

We have investigated the plastic deformation properties of single-phase Zr–Nb–Ti–Ta–Hf high-entropy alloys from room temperature (RT) up to 300 °C. Uniaxial deformation tests at a constant strain rate of 10^?4?s^?1 were performed, including incremental tests such as stress relaxations, strain-rate changes, and temperature changes in order to determine the thermodynamic activation parameters of the deformation process. The microstructure of deformed samples was characterized by transmission electron microscopy. The strength of the investigated Zr–Nb–Ti–Ta–Hf phase is not as high as the values frequently reported for high-entropy alloys in other systems. At RT we measure a flow stress of about 850 °C. We find an activation enthalpy of about 1 eV and a stress dependent activation volume between 0.5 and 2 nm³. The measurement of the activation parameters at higher temperatures is affected by structural changes evolving in the material during plastic deformation.     

TEM study on relationship between stacking faults and non-basal dislocations in Mg

Recent interest in the study of stacking faults and non-basal slip in Mg alloys is partly based on the argument that these phenomena positively influence mechanical behaviour. Inspection of the published literature, however, reveals that there is a lack of fundamental information on the mechanisms that govern the formation of stacking faults, especially I1-type stacking faults (I1 faults). Moreover, controversial and sometimes contradictory mechanisms have been proposed concerning the interactions between stacking faults and dislocations. Therefore, we describe a fundamental transmission electron microscope investigation on Mg 2.5 at. % Y (Mg–2.5Y) processed via hot isostatic pressing (HIP) and extrusion at 623 K. In the as-HIPed Mg–2.5Y, many 〈c〉 and 〈a〉 dislocations, together with some 〈c + a〉 dislocations were documented, but no stacking faults were observed. In contrast, in the as-extruded Mg–2.5Y, a relatively high density of stacking faults and some non-basal dislocations were documented. Specifically, there were three different cases for the configurations of observed stacking faults. Case (I): pure I2 faults; Case (II): mixture of I1 faults and non-basal dislocations having 〈c〉 component, together with basal 〈a〉 dislocations; Case (III): mixture of predominant I2 faults and rare I1 faults, together with jog-like dislocation configuration. By comparing the differences in extended defect configurations, we propose three distinct stacking fault formation mechanisms for each case in the context of slip activity and point defect generation during extrusion. Furthermore, we discuss the role of stacking faults on deformation mechanisms in the context of dynamic interactions between stacking faults and non-basal slip.