Spontaneous emission from a microwave-driven four-level atom in an anisotropic photonic crystal

The spontaneous emission from a microwave-driven four-level atom embedded in an anisotropic photonic crystal is studied. Due to the modified density of state(DOS) in the anisotropic photonic band gap(PBG) and the coherent control induced by the coupling fields, spontaneous emission can be significantly enhanced when the position of the spontaneous emission peak gets close to the band gap edge. As a result of the closed-loop interaction between the fields and the atom,the spontaneous emission depends on the dynamically induced Autler–Townes splitting and its position relative to the PBG.Interesting phenomena, such as spectral-line suppression, enhancement and narrowing, and fluorescence quenching, appear in the spontaneous emission spectra, which are modulated by amplitudes and phases of the coherently driven fields and the effect of PBG. This theoretical study can provide us with more efficient methods to manipulate the atomic spontaneous emission.     

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

A new ultra-low specific on-resistance(Ron,sp) vertical double diffusion metal–oxide–semiconductor field-effect transistor(VDMOS) with continuous electron accumulation(CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration(Nn). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp.Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS(CSJ-VDMOS)at the same high breakdown voltage(BV).     

Electron-impact dissociation and transient properties of a stored LiH2 - beam

The fragmentation of LiH₂ ^- anions after electron impact was investigated at the heavy-ion storage ring TSR. The main reaction channel was found to be electron detachment followed by a breakup into LiH + H. In the first ms after production of the molecular ions in a cesium sputtering ion source, additional contributions were observed in the Li + H₂ and Li^- + H₂ channels, hinting at an initial population of a short-lived state of the anion. To gain a better understanding of the mechanisms underlying the observed behavior of the system, ab initio calculations of relevant potential energy surfaces were performed at selected geometries. The experimental findings are discussed in the light of these calculations.     

Role of the d-f Coulomb interaction in intermediate valence and Kondo systems: a numerical renormalization group study

Using the numerical renormalization group method, the dependences on temperature of the magnetic susceptibility χ(T) and specific heat C(T) are obtained for the single-impurity Anderson model with inclusion of d-f the Coulomb interaction. It is shown that the exciton effects caused by this effect (charge fluctuations) can significantly change the behaviour of C(T) in comparison with the standard Anderson model at moderately low temperatures, whereas the behaviour of χ(T) remains nearly universal. The ground-state and temperature-dependent renormalizations of the effective hybridization parameter and f-level position caused by the d-f interaction are calculated, and satisfactory agreement with the Hartree-Fock approximation is derived.     

Electromagnetic proton-neutron knockout off <Superscript>16</Superscript>O : New achievements in theory

Results for the cross-sections of the exclusive ¹⁶O(e, e'pn)¹⁴N and ¹⁶O(γ, pn)¹⁴N knockout reactions are presented and discussed in different kinematics. In comparison with earlier work, a complete treatment of the center-of-mass (CM) effects in the nuclear one-body current is considered in connection with the problem of the lack of orthogonality between initial bound and final scattering states. The effects due to CM and orthogonalization are investigated in combination with different treatments of correlations in the two-nucleon overlap function and for different parametrizations of the two-body currents. The CM effects lead in super-parallel kinematics to a dramatic increase of the ¹⁶O(e, e'pn) cross-section to the 1₂ ⁺ excited state (3.95MeV) of ¹⁴N . In all the situations considered the results are very sensitive to the treatment of correlations. A crucial role is played by tensor correlations, but also the contribution of long-range correlations is important.     

Size‐Dependent Room Temperature Oxidation of Tin Particles

Using transmission electron microscopy, the size‐dependent room temperature oxidation of tin nanoparticles is studied. The oxide that forms during room temperature oxidation of Sn particles is amorphous SnO, and it retains this stoichiometry and structure over extended time periods. From the investigation of arrays of Sn nanoparticles with broad size distribution, under identical conditions, the Sn oxide thickness is evaluated as a function of size and oxidation time. The oxide thickness depends strongly on the size of the Sn nanoparticles, which is in excellent agreement with predictions for a Mott–Cabrera model corrected for a non‐uniform electric field. The results demonstrate the accelerated oxidation kinetics of nanoscale particles with high curvature, due to the amplified electric field at the interface to a continuously shrinking metal core.     

High‐mobility solution‐processed zinc oxide thin films on silicon nitride

A high effective electron mobility of 33 cm² V^–1 s^–1 was achieved in solution‐processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si₃N₄) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO₂). The solution‐processed ZnO thin films grown on Si₃N₄, prepared by low‐pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO₂. These results show that the nucleation and growth mechanisms of solution‐processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high‐κ HfO₂/ZnO MOSCAPs were about ten times lower in those fabricated on Si₃N₄ substrates. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

     

Field emission scanning electron microscopy (FE-SEM) as an approach for nanoparticle detection inside cells

When developing new nanoparticles for bio-applications, it is important to fully characterize the nanoparticle's behavior in biological systems. The most common techniques employed for mapping nanoparticles inside cells include transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). These techniques entail passing an electron beam through a thin specimen. STEM or TEM imaging is often used for the detection of nanoparticles inside cellular organelles. However, lengthy sample preparation is required (i.e., fixation, dehydration, drying, resin embedding, and cutting). In the present work, a new matrix (FTO glass) for biological samples was used and characterized by field emission scanning electron microscopy (FE-SEM) to generate images comparable to those obtained by TEM. Using FE-SEM, nanoparticle images were acquired inside endo/lysosomes without disruption of the cellular shape. Furthermore, the initial steps of nanoparticle incorporation into the cells were captured. In addition, the conductive FTO glass endowed the sample with high stability under the required accelerating voltage. Owing to these features of the sample, further analyses could be performed (material contrast and energy-dispersive X-ray spectroscopy (EDS)), which confirmed the presence of nanoparticles inside the cells. The results showed that FE-SEM can enable detailed characterization of nanoparticles in endosomes without the need for contrast staining or metal coating of the sample. Images showing the intracellular distribution of nanoparticles together with cellular morphology can give important information on the biocompatibility and demonstrate the potential of nanoparticle utilization in medicine.     

皮秒脉冲功率技术理论模型及其优化设计

为了产生100~500 ps,200~500 kV,1~10 kA数量级的皮秒放电脉冲,建立了一个皮秒脉冲发生器理论模型,并提出利用增益系数极值法,确定其最大兼容工作点,相对于纳秒脉冲成形线,皮秒脉冲成形线实现了90%,70%,85%的归一化电压增益、能量增益和放电功率增益。为了最大限度地降低皮秒脉冲成形线的载压时间,提高系统的绝缘安全因子,利用华罗庚0.618优算法,设计了电压传输系数。在纳秒脉冲成形线与皮秒脉冲成形线阻抗比值等于1.63条件下,在4倍和6倍皮秒脉冲成形线时间之内,归一化电压增益、能量增益和放电功率增益就可以分别达到94%,72%,89%与99%,53%,97%。     

HT-7托卡马克slide-away放电充气对等离子体行为的影响

本文研究了slide-away放电条件下的等离子体约束性能;分析了充气对等离子体约束性能以及反常多普勒共振不稳定性的影响.研究了等离子体密度的提升对slide-away放电过程中逃逸电子辐射行为的影响.研究结果发现:slide-away放电充气可以抑制逃逸电子反常多普勒不稳定性,但是使得等离子体约束状态变差,逃逸电子辐射增强.