磁斯格明子的微磁学研究进展和应用

磁斯格明子作为一种具有拓扑保护性质的准粒子受到了磁学与磁性材料领域科学家的广泛关注.本文对磁斯格明子的拓扑性质进行了概述,回顾了磁斯格明子的存在条件以及运输特性,综述了近年来利用微磁学模拟研究的磁斯格明子激发、操控、微波磁场响应以及基于磁斯格明子的器件设计,主要包括赛道存储器、自旋纳米振荡器、晶体管和逻辑门.通过本文的综述,希望为磁斯格明子在未来信息领域的应用提供参考.     

界面Dzyaloshinskii-Moriya相互作用下辐射状磁涡旋形成机制

辐射状磁涡旋结构是一种稳定的拓扑磁结构,因其具有热稳定性高、驱动电流小等特点,成为当前继斯格明子之后又一新兴的研究热点.本文利用微磁学模拟方法研究了在界面Dzyaloshinskii-Moriya相互作用（IDMI）下辐射状磁涡旋形成机制.结果表明：纳米盘直径越小,能稳定形成辐射状磁涡旋的IDMI强度范围就越大,当圆盘厚度增加一个数量级时,虽然可以稳定形成辐射状磁涡旋,但IDMI强度取值范围会随之变小.通过对不同磁矩初始态下辐射状磁涡旋的形成过程中磁矩、斯格明子数及各项能量变化的研究发现,环形涡旋和单畴均可作为辐射状磁涡旋形成的初始状态,但单畴初始态的形成时间比环形涡旋初始态的形成时间更长,其能量衰减时间比以环形涡旋为初始态的衰减时间更短.这表明形成辐射状磁涡旋极性比形成辐射旋性需要更长时间,且能量变化主要与涡旋核的生成及面内辐射状磁矩有关,而与涡旋核在盘中的位置无关.研究结果揭示了辐射状磁涡旋的形成机制,为基于辐射状磁涡旋的具体应用提供了理论依据.     

W(110)基底上的铁纳米岛初始自发磁化态的微磁学模拟

用微磁学模拟研究W(110)基底上铁纳米岛的初始自发磁化态的磁畴结构,确定了不规则形状、椭圆形和矩形岛中不同磁畴态之间的各向异性常数的临界点,得到了纳米岛的磁化态作为各向异性常数和厚度函数的完整相图,相图中存在一较宽的过渡区,把双畴态与涡旋态和菱形态分开,过渡区两侧的边界是不确定的.计算结果表明,初始自发磁化态的磁畴结构主要由各向异性及岛的厚度决定,而且岛的边沿形状对涡旋态和菱形态的磁畴结构有重要影响.准确的铁纳米岛的各向异性常数仍有待于进一步确定. 关键词： 初始自发磁化磁畴结构 铁纳米岛 微磁学模拟 各向异性     

Skyrmion-based logic gates controlled by electric currents in synthetic antiferromagnet

Skyrmions in synthetic antiferromagnetic (SAF) systems have attracted much attention in recent years due to their superior stability, high-speed mobility, and completely compensated skyrmion Hall effect. They are promising building blocks for the next generation of magnetic storage and computing devices with ultra-low energy and ultra-high density. Here, we theoretically investigate the motion of a skyrmion in an SAF bilayer racetrack and find the velocity of a skyrmion can be controlled jointly by the edge effect and the driving force induced by the spin current. Furthermore, we propose a logic gate that can realize different logic functions of logic AND, OR, NOT, NAND, NOR, and XOR gates. Several effects including the spin-orbit torque, the skyrmion Hall effect, skyrmion-skyrmion repulsion, and skyrmion-edge interaction are considered in this design. Our work may provide a way to utilize the SAF skyrmion as a versatile information carrier for future energy-efficient logic gates.     

Possible Topological Hall Effect in a Spin Gapless Semiconducting Mn2CoAl Heusler Compound

Topological Hall effect (THE), induced by the interaction of charge carriers with mesoscopic or microscopic noncoplanar spin structures, holds promising applications in the field of spintronics. In the present study, a giant THE of about 2 μΩ cm at room temperature is reported in a bulk spin gapless semiconducting Mn₂CoAl cubic Heusler compound. Temperature-dependent investigation of magneto-transport data reveals that the Mn₂CoAl has the large THE over a wide temperature range of 2–300 K. The alternating current (AC) susceptibility as a function of magnetic field exhibits a smooth and continuous response rather than any kink or anomaly, suggests that the observed THE in the Mn₂CoAl compound results from the interaction of charge carriers with the microscopic noncoplanar spin texture. The observed THE as a function of temperature follows the same behavior as the magnetocrystalline anisotropy (MCA) of the cubic Mn₂CoAl, indicating the competition of the MCA with ferromagnetic and antiferromagnetic exchange interactions as the origin of the noncoplanar spin texture and hence THE. Micromagnetic simulations further support the emergence of noncoplanar spin structure as a result of the competition between different energies.     

Nucleation field,reversal mechanism and coercivity paradox in two-phased magnetic nanosystem

The magnetic reversal mechanism has been determined within a micromagnetic model reliably for a two-phased magnetic nanosystem,with the formulae for nucleation fields derived analytically.It is found that the nucleation field HN decreases uniformly as the size of the soft phase Ls increases whereas it increases with the size of the hard phase Lh.The analysis shows that whilst the effect of Lh could be ignored in most cases,where the nucleation field is dominated by the Ls and the calculation could be signif...     

Magnetic moment distributions in α- Fe nanowire array

α-Fe nanowire array has been electrodeposited into anodic aluminum oxide template. The magnetic moment distributions, in the interior and near the extremities of α-Fe nanowire with 60 nm in diameter, have been studied by means of transmission Mössbauer spectroscopy (MS), conversion electron Mössbauer spectroscopy (CEMS) and micromagnetic simulation. Transmission Mössbauer spectrum (MS) shows that the magnetic moments, inside the α-Fe nanowire array, are well parallel to nanowire, while conversion electron Mössbauer spectrum (CEMS) reveals that the magnetic moments, near the extremities of nanowire, diverge from the long axis of wire, and the average diverging angle calculated by the intensity ratio of the 2,5 peaks is about 24.0°. Moreover, the magnetic moment distributions of different depths to the top of wire are counted using micromagnetic simulation, which indicates that, the interior magnetic moments are strictly parallel to nanowire, and the closer the magnetic moment to the top of wire, the larger the diverging angle. Magnetic measurement shows that this α-Fe nanowire array represents a strong magnetic anisotropy.     

具有倾斜极化层的自旋阀结构中磁翻转以及磁振荡模式的微磁模拟

基于自由层与钉扎层均为垂直磁各向异性的自旋阀结构,采用微磁学模拟与傅里叶分析相结合的技术,研究了极化层磁矩小角度倾斜情形下自由层磁矩的进动翻转特性.通过沿样品垂直膜面方向同时施加电流与磁场,观察到自由层磁矩垂直膜面方向分量的平均值随磁场的演化翻转曲线中出现了多个凹槽.模拟研究结果表明:在一定的电流范围内,凹槽出现的位置与电流大小无关;而在固定的应用电流下,凹槽出现的位置将会受到样品厚度的影响;在凹槽区域内,非一致进动模式、自旋驻波模式、局域自旋波模式等多种磁振荡模式被激发.通过傅里叶分析,得到了各种磁振荡模式的频谱,频谱中的频率分布体现出了倍频以及间谐波的频率特性.     

磁畴壁手性和磁斯格明子的拓扑性表征及其调控

磁性斯格明子由于拓扑的保护性,具有很高的稳定性和较小的临界驱动电流,有望应用于未来的赛道存储器件中.而在中心对称体系,由于偶极作用的各向同性,磁泡的拓扑性和螺旋度都呈现出多样性的特征.其中非平庸的磁泡即等同于磁性斯格明子.我们通过近期实验结果,结合微磁学模拟的方法,发现在中心对称体系中磁斯格明子的拓扑性会受到体系垂直各向异性的调控.另外在加磁场的演变过程中,会很大程度上依赖于基态畴的畴壁特性.磁场的倾斜或者一定的面内各向异性也会改变磁斯格明子的形态.通过对材料的基态磁结构及磁各向异性的调节,辅助以面内分量的控制,可以对基态磁畴、进而对磁斯格明子的拓扑性实现调控.这对磁斯格明子在电流驱动存储器件中的应用具有重要意义.     

Nd2Fe14B/α″-Fe16N2双层膜磁性能和磁化反转过程的研究

本文运用三维微磁学方法对Nd2Fe14B/α″-Fe16N2磁性双层膜模型垂直取向的磁滞回线、磁化反转过程、矫顽力和磁能积等进行了系统的研究．计算结果表明磁滞回线的方形度随着软磁层厚度(Ls)的增加而变差．同时,成核场和矫顽力随Ls的增加而单调递减．另外,在磁化反转的过程中发现了磁涡流态的产生和湮灭,而且进一步计算磁化反转过程中的能量变化过程发现涡流态的形成总伴随着能量的减小．剩磁和最大磁能积随Ls的增大先增大,达到峰值后迅速降低,而矫顽力呈单调递减趋势．当Ls=1 nm时,最大磁能积达到最大值81.7 MGOe．