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81.
The transition between insulator and metal conductor states, induced by oxygen non-stoichiometry, was studied for NaNbO3 : Mn crystals. Conditions for an optimal reduction were determined on the basis of TGA tests. The temperature dependencies of the resistance measured on the macroscale showed that the transition from thermally activated to metallic features depends on the level of oxygen deficiency. The LC-AFM measurement exhibited non-homogeneous electric resistance on the nanoscale. We ascribed the local insulator–metal transition to changeover in the electronic state of the Nb ions occurring in filaments. The Mn dopant stabilised the induced oxygen non-stoichiometry and the metallic conduction down to room temperature. 相似文献
82.
Topological analysis of disclinations in nematic liquid crystals is an interesting and diverse topic that goes from strict mathematical theorems to applications in elaborate systems found in experiments and numerical simulations. The theory of nematic disclinations is shown from both the geometric and topological perspectives. Entangled disclination line networks are analyzed based on their shape and the behavior of their cross section. Methods of differential geometry are applied to derive topological results from reduced geometric information. For nematic braids, systems of −1/2 disclination loops, created by inclusion of homeotropic colloidal particles, a formalism of rewiring is constructed, allowing comparison and construction of an entire set of different conformations. The disclination lines are described as ribbons and a new topological invariant, the self-linking number, is introduced. The analysis is generalized from a constant −1/2 profile to general profile variations, while retaining the geometric treatment. The workings of presented topological statements are demonstrated on simple models of entangled nematic colloids, estimating the margins of theoretical assumptions made in the formal derivations, and reviewing the behavior of the disclinations not only under topological, but also under free-energy driven constraints. 相似文献
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Ratan Kotipalli Bart Vermang Viktor Fjällström Marika Edoff Romain Delamare Denis Flandre 《固体物理学:研究快报》2015,9(3):157-160
The benefits of gallium (Ga) grading on Cu(In,Ga)Se2 (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive‐level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free‐carrier densities in the CIGS absorber, and their impact on the cell's open‐circuit voltage Voc. The parameter most constraining the cell's Voc is found to be the deep‐defect density close to the space charge region (SCR). In ungraded devices, high deep‐defect concentrations (4.2 × 1016cm–3) were observed near the SCR, offering a source for Shockley–Read–Hall recombination, reducing the cell's Voc. In graded devices, the deep‐defect densities near the SCR decreased by one order of magnitude (2.5 × 1015 cm–3) for back surface graded devices, and almost two orders of magnitude (8.6 × 1014 cm–3) for double surface graded devices, enhancing the cell's Voc. In compositionally graded devices, the free‐carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
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The “supercell” scheme is applied to the study of local defects in MgO (Ca substitution, cation and anion vacancies) and bulk silicon (carbon substitution). The trend of the quantities of interest (defect formation energy, geometrical relaxation, charge distribution around the defect) as a function of the supercell size is explored; when neutral defects are considered, supercells containing 50 to 100 atoms are large enough to allow for most of the nuclear and electronic relaxation and to produce a negligible interaction between defects in different cells. These conclusions apply both to ionic and covalent host crystals. Present day ab initio quantum mechanical periodic computer programs can handle cells of such a size at a relatively low cost and high numerical accuracy. When charged defects are considered (vacancies in MgO), the supercell scheme must be modified in order to avoid Coulomb divergencies, but the usually adopted correction, which consists in introducing a compensating uniform background of charge, generates spurious higher order electrostatic interactions, which are far from being negligible. The resulting defect formation energies show very slow, if any, convergence trends and “a posteriori” semiclassical corrections proposed in the literature do not represent a general solution to the problem. On the other hand, other properties, such as atom relaxation and charge distribution, show a much faster convergence than energy with respect to the cell size. 相似文献
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In this paper,we study the quantum properties of a bilayer graphene with(asymmetry) line defects.The localized states are found around the line defects.Thus,the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel.By adding a bias potential along the direction of the line defects,we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Biittiker theory,and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene.This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering. 相似文献
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三元黄铜矿结构(也称类金刚石结构)半导体是一类具有热电转换潜力的新型热电材料. 本次工作中采用电负性更小的Mn元素替换CuInTe2黄铜矿结构半导体中的Cu元素, 设计制备贫Cu化合物Cu1-xInMnxTe2. 研究表明, 当Mn含量较低时, Mn优先占位在In 位置产生受主缺陷MnIn-. 因此随着Mn含量的增大, 载流子浓度和电导率均得到改善. 但当Mn含量进一步增大后, Mn可同时占位在In位置和Cu位置, 除产生受主缺陷MnIn-外, 还能产生施主缺陷MnCu+. 由于两类极性相反的缺陷之间的湮灭现象, 使得缺陷浓度及载流子浓度开始降低, 晶格结构畸变有变小趋势, 因此在高温下晶格热导率仅略有提高. 研究结果表明, 在某一特定的Mn含量(x=0.05)时, 材料具有最优的热电性能(ZT=0.84@810.0 K), 这一性能约是未掺杂CuInTe2的2倍. 相似文献