Positive and negative Hanbury-Brown and Twiss correlations in normal metal-superconducting devices

In the light of the recent analogs of the Hanbury-Brown and Twiss experiments [1] in mesoscopic beam splitters, negative current noise correlations are recalled to be the consequence of an exclusion principle. Here, positive (bosonic) correlations are shown to exist in a fermionic system, composed of a superconductor connected to two normal reservoirs. In the Andreev regime, the correlations can either be positive or negative depending on the reflection coefficient of the beam splitter. For biases beyond the gap, the transmission of quasiparticles favors fermionic correlations. The presence of disorder enhances positive noise correlations. Potential experimental applications are discussed. Received 1 June 1999     

LOW POTENTIAL ELECTROPOLYMERIZATION OF ANISOTROPIC CONDUCTIVE POLYTHIOPHENE FILMS AND FABRICATION OF ELECTRICAL DEVICES

The complexation of thiophene with a Lewis acid with moderate acidity as a solvent, such as BF_3-ethyl ether (BFEE) remarkedly lowered the electrochemical polymerization potential. The positively chargedmetal surface of electrode in the process of electrochemical deposition enhanced the coordination interactionbetween π-electrons of thiophene unit and the metal, which makes thiophene rings lie parallel to the surfaceof electrode, resulting in a highly ordered polymeric structure. Because of the large intra-chain transferintegrals, the transport of charge is believed to be principally along the conjugated chains, which is muchgreater than the inter-chain hopping. The specific electrical resistance across the polythiophene film thicknessis more than 10~4 times than that along the surface plane of the film. In this paper we review the recentdevelopment of polymerization technique by low potential electrochemical method performed in our lab andseveral electrical devices in which the compact polythiophene films, such as anionic and cationic sieves, andlaminate film junction of undoped polythiophene derivatives were used.     

A Simple Derivation of Josephson's Formulae in Superconductivity

A simple and general derivation of Josephson's formulae for the tunneling currents is presented on the basis of Sewell's general formulation of superconductivity in relation to off-diagonal long-range order (ODLRO).     

Spin-Polarized Electron Tunneling TD:\pdf\.PDFhrough a Quantum Dot

Nonequilibrium Green's function is uscd to study spin-polarized electron tunneling through a quantum dot connected to two ferromagnetic electrodes with different orientations via two insulating barriers (FM/I/QD/I/FA.f). Intra-level Coulomb interaction in the dot is considered. General formula of tunneling current which can be used for arbitrary angle between the two electrodes' magnetizations is derived for both the weak and strong intra-dot interactions.We find that the transport current can be divided into two parts: the current with the spin-flip and the current without the spin-flip, which critically depend on the linewidth function near the Fermi level of the ferromagnetic electrodes. If a magnetic field is applied in the quantum dot, different behaviors will be found for weak and strong interactions.     

Nonlinear resonance between a soliton and Josephson plasma waves: experiment and theory

Resonant interaction of a soliton (Josephson fluxon) with its self-generated Josephson plasma waves is studied experimentally, numerically, and analytically. An externally applied magnetic field H forms a cos-like potential relief for the soliton in the annular junction. Soliton motion under the influence of the bias current leads to an emission of plasma waves, which gives rise to a resonance at a certain soliton velocity. This resonance on the current–voltage characteristics shows a clear backbending accompanied by a negative differential resistance. Our analysis quantitatively explains the observed effect.     

Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect

Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.     

单分子结的构筑及分子电导性质的测试

分子电子学已成为21世纪研究的热点. 通过将具有特定功能的分子连接在纳米尺度金属电极之间从而构筑包括分子导线、开关、整流器在内的各种分子尺度电子器件, 这引起了科学家们广泛的研究兴趣. 在分子电子学研究中, 构筑金属/分子/金属(MMM)分子结是研究分子器件中电子传输性质的关键. 尽管已经取得了很大的进展, 目前在纳米尺度下构筑稳定可靠的MMM分子结并测试单个分子的电学性质仍然面临很多挑战. 本文着重对单分子电学性质的测试技术和相关理论研究的最新进展以及存在的挑战做了概述.     

氢气浸泡辐照加速方法在3DG111器件上的应用及辐射损伤机理分析

本文以~(60)Co为辐照源,针对3DG111型晶体管,利用半导体参数分析仪和深能级缺陷瞬态谱仪,研究高/低剂量率和有/无氢气浸泡条件下,电性能和深能级缺陷的演化规律.试验结果表明,与高剂量率辐照相比,低剂量率辐照条件下,3DG111型晶体管的电流增益退化更加严重,这说明该器件出现了明显的低剂量率增强效应;无论是高剂量率还是低剂量率辐照条件下,3DG111晶体管的辐射损伤缺陷均是氧化物正电荷和界面态陷阱,并且低剂量率条件下,缺陷能级较深;氢气浸泡后在高剂量率辐照条件下,与未进行氢气处理的器件相比,辐射损伤程度明显加剧,且与低剂量率辐照条件下器件的损伤程度相同,缺陷数量、种类及能级也相同.因此,氢气浸泡处理可以作为低剂量率辐射损伤增强效应加速评估方法的有效手段.     

Effects of the triple junction types on the grain boundary carbide precipitation in a nickel-based superalloy,a statistical analysis

The morphology evolution of carbide precipitated on grain boundary nearby different triple junctions in grain boundary engineering (GBE) treated nickel-based Inconel Alloy 690 aged at 715°C for different time was investigated by scanning electron microscopy and electron backscatter diffraction. The results show that, the diversity of triple junction types was increased by GBE significantly. The size and morphology of grain boundary carbide were not only affected by the grain boundary character, but also the nearby grain boundary character at the triple junction. The higher Σ values of the nearby grain boundaries, the larger carbide precipitated on the other grain boundary. Based on the experimental results, the effects of grain boundary characters and triple junction types on the carbide precipitation behaviours are discussed.     

Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate

The junction properties of tunnel silicon oxide (SiO_x) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of ～0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (V_bi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiO_x, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiO_x layer. The C of depleting layer deviates from the normal linear curve in the 1/C²-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C^2+γ-V plots with γ > 0 leads to linear curves with a proper γ and the V_bi can still be estimated. We find that the V_bi is the range of 0.75–0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay.