Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level

In this work, the trap-assisted tunneling(TAT) mechanism is modeled as a two-step physical process for charge trapping memory(CTM). The influence of the TAT mechanism on CTM performance is investigated in consideration of various trap positions and energy levels. For the simulated CTM structure, simulation results indicate that the positions of oxide traps related to the maximum TAT current contribution shift towards the substrate interface and charge storage layer interface during time evolutions in programming and retention operations, respectively. Lower programming voltage and retention operations under higher temperature are found to be more sensitive to tunneling oxide degradation.     

Spatial Chaos of Bose-Einstein Condensates in a Cigar-Shaped Trap

The spatial chaos of Bose-Einstein condensates in a cigar-shaped trap is studied. For a system with a steady current, we construct the general solution of the 1st-order equation. From the boundedness condition of the general solution, we obtain the Melnikov function predicting the onset of chaos. The unpredictability of the system's distribution of atom density is also theoretically analyzed. For a 23Na system meeting the perturbation condition, numerical simulations show the existence of chaos, which is in accordance with our analytical results. Numerical simulations of a 87 Rb system dissatisfying the perturbation condition also demonstrate that there exists chaos in the system. The case without a current is also investigated.     

薄油层SAGD开发蒸汽腔发育和生产指标预测

通过分析现场生产数据和数值模拟结果,将薄层稠油油藏蒸汽辅助重力驱油(SAGD)生产中蒸汽腔发育分为横向扩展和向下运移两个过程,并进行简化处理预测SAGD生产指标.联合质量守恒方程、能量守恒方程和周围地层散热模型得到一个描述蒸汽腔发育的综合表达式,该方程属于典型的第二类Volterra积分函数.通过拉普拉斯变换对Volterra积分函数进行半解析求解,最终得到不同时刻蒸汽腔发育状态.为验证模型的正确性,将模型的计算结果与CMG Stars的计算结果对比,整体误差小于5%.新模型可以方便简单地预测SAGD生产中蒸汽腔发育过程和生产动态指标,从而确定SAGD生产的极限油藏参数和合理的注采参数.     

Study on the imaging characteristics of far-field superlens

The optical transfer function of the far-field superlens imaging system is established in this thesis to make it easy to describe the corresponding relation between the far-field angular spectrum and the near-field object superresolution information. We utilized the established optical transfer function to make detailed research on the imaging characteristics of the far-field superresolution, also reconstruct the near-field nano-information through the far-field angular spectrum, which proves that the resolution of the far-field superlens with structure coupled with metal grating can reach 50 nm, and provides a helpful reference for the study of the new optical microscope imaging of superresolution.     

Contact position and width effect of graphene electrode on the electronic transport properties of dehydrobenzoannulenne molecule under bias

By applying nonequilibrium Green?s function formalism in combination with density functional theory, we have investigated the electronic transport properties of dehydrobenzoannulenne molecule attached to different positions of the zigzag graphene nanoribbons (ZGNRs) electrode. The different contact positions are found to drastically turn the transport properties of these systems. The negative differential resistance (NDR) effect can be found when the ZGNRs electrodes are mirror symmetry under the xz midplane, and the mechanism of NDR has been explained. Moreover, parity limitation tunneling effect can be found in a certain symmetry two-probe system and it can completely destroy electron tunneling process. The present findings might be useful for the application of ZGNRs-based molecular devices.     

Rapidly convergent series for high-accuracy calculation of the Voigt function

A rapidly convergent series, based on Fourier expansion of the exponential multiplier, is presented for highly accurate approximation of the Voigt function (VF). The corresponding algorithm enables the rapid calculation, required for its implementation as a subprogram in an interpolation approach. The numerical analysis of this VF approximation suggests that it may be more accurate than 10⁻⁹ in the Humlí?ek regions 3 and 4.     

Dynamic control of retrieval contrast in a Λ-type atomic system

We propose an efficient scheme for optimizing the optical memory of a sequence of signal light pulses in a system of ultracold atoms in Λ configuration. The memory procedure consists of write-in, storage, and retrieval phases. By applying a weak microwave field in the storage stage, additional phase-dependent terms are included, and the contrast of the output signal pulses can be dynamically controlled (enhanced or suppressed) through manipulating the relative phase φ between optical and microwave fields. Our numerical analysis shows that the contrast is enhanced to the most extent when φ=1.5π. In addition, the contrast is in proportion to the Rabi frequency of the microwave field with a certain relative phase.     

The influence of thermally assisted tunneling on the performance of charge trapping memory

We evaluate the influence of the thermally assisted tunneling (TAT) mechanism on charge trapping memory (CTM) cell performance by numerical simulation, and comprehensively analyse the effects of the temperature, trap depth, distribution of trapped charge, gate voltage and parameters of TAT on erasing/programming speed and retention performance. TAT is an indispensable mechanism in CTM that can increase the detrapping probability of trapped charge. Our results reveal that the TAT effect causes the sensitivity of cell performance to temperature and it could affect the operational speed, especially for the erasing operation. The results show that the retention performance degrades compared with when the TAT mechanism is ignored.     

Scaling properties of phase-change line memory

Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current-voltage (I-V ) and resistance-voltage (R-V ) characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase-change line memory. The results show that the resistive amorphous (RESET) power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.