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941.
In light of the generator polynomials of constacyclic codes over finite chain rings, the depth spectrum of constacyclic codes can be determined if (n,p)=1. 相似文献
942.
Optimum step-stress
accelerated
degradation
test
for Wiener degradation
process
under
constraints 总被引:1,自引:0,他引:1
To assess a product's reliability for subsequent managerial decisions such as designing an extended warranty policy and developing a maintenance schedule, Accelerated Degradation Test (ADT) has been used to obtain reliability information in a timely manner. In particular, Step-Stress ADT (SSADT) is one of the most commonly used stress loadings for shortening test duration and reducing the required sample size. Although it was demonstrated in many previous studies that the optimum SSADT plan is actually a simple SSADT plan using only two stress levels, most of these results were obtained numerically on a case-by-case basis. In this paper, we formally prove that, under the Wiener degradation model with a drift parameter being a linear function of the (transformed) stress level, a multi-level SSADT plan will degenerate to a simple SSADT plan under many commonly used optimization criteria and some practical constraints. We also show that, under our model assumptions, any SSADT plan with more than two distinct stress levels cannot be optimal. These results are useful for searching for an optimum SSADT plan, since one needs to focus only on simple SSADTs. A numerical example is presented to compare the efficiency of the proposed optimum simple SSADT plans and a SSADT plan proposed by a previous study. In addition, a simulation study is conducted for investigating the efficiency of the proposed SSADT plans when the sample size is small. 相似文献
943.
We study a spin structure that arises in a one‐dimensional quantum dot with zero total spin under the action of a charged tip of a scanning probe microscope in the presence of a weak magnetic field. The evolution of spin structure with changing the probe position is traced to show that the movable probe can be an effective tool to manipulate the spin. The spin structures are formed when the probe is located in certain regions along the dot due to Coulomb interaction of electrons as they are redistributed between the two sections in which the quantum dot is divided by the potential barrier created by the probe. There are two main states: spin‐polarized and non‐polarized ones. The transition between them is accompanied by a spin precession governed by the Rashba spin–orbit interaction induced by the electric field of the probe. In the transition region the spin density changes strongly while charge distribution remains nearly unchanged. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
944.
通过对由纳米磁流体运动引起的双扫描激光散斑干涉光场及其变化做拉盖尔-高斯滤波下的傅里叶变换,获得动态散斑干涉图对应的光学涡旋分布及变化特征。分析认为,光学涡旋分布及变化对应着由纳米磁微粒及其团族的运动所引起的动态散斑变化。当纳米磁微粒聚集到分散的过程中,动态激光散斑光场的奇异场分布发生相应变化,说明了磁流体运动过程对应涡旋密度有先大后小,再由小变大的两个变化;并且光学涡旋密度高,对应较小颗粒的散斑场,磁流体处于稳态的状况;光学涡旋密度低,对应较大颗粒的散斑场,对应着磁流体激烈的运动。研究结果体现了奇异场分布变化和纳米磁流体动后趋稳的过程存在对应关系。 相似文献
945.
In this contribution, the electronic and linear and nonlinear optical properties of pyramid-shaped GaAs quantum dots (QDs) coupled to wetting layer (WL) in an Al0.3Ga0.7As matrix have been investigated. This nanostructure is relaxed from strain effects due to very small lattice-mismatching. Three transitions of P-to-S, WL-to-P, and WL-to-S were considered and the corresponding transition dipole moments, oscillator strengths, and linear and nonlinear optical properties regarding to these transitions were investigated as a function of the QD height. The results showed that for P-to-S transition, which is a purely in-plane-polarized transition, the dependence of electronic and optical properties on the size is moderate and can be neglected. But for WL-to-P and WL-to-S transitions, which are in-plane- and z-polarized transitions, respectively, the electronic as well as optical properties are strongly size-dependent. Furthermore, a competition between WL-to-S and WL-to-P transitions was observed when the QD size changed. 相似文献
946.
The core/shell CdSeTe/ZnS quantum dots (QDs) with emission at 780–800 nm (1.55–1.60 eV) have been studied by means of photoluminescence (PL) and Raman scattering methods in the nonconjugated state and after conjugation to different antibodies (Ab): (i) mouse monoclonal [8C9] human papilloma virus Ab, anti-HPV 16-E7 Ab, (ii) mouse monoclonal [C1P5] human papilloma virus HPV16 E6+HPV18 E6 Ab, and (iii) pseudo rabies virus (PRV) Ab. The transformations of PL and Raman scattering spectra of QDs, stimulated by conjugated antibodies, have been revealed and discussed.The energy band diagram of core/shell CdSeTe/ZnS QDs has been designed that helps to analyze the PL spectra and their transformations at the bioconjugation. It is shown that the core in CdSeTe/ZnS QDs is complex and including the type II quantum well. The last fact permits to explain the nature of infrared (IR) optical transitions (1.55–1.60 eV) and the high energy PL band (1.88–1.94 eV) in the nonconjugated and bioconjugated QDs. A set of physical reasons has been analyzed with the aim to explain the transformation of PL spectra in bioconjugated QDs. Finally it is shown that two factors are responsible for the PL spectrum transformation at bioconjugation to charged antibodies: (i) the change of energy band profile in QDs and (ii) the shift of QD energy levels in the strong quantum confinement case. The effect of PL spectrum transformation is useful for the study of QD bioconjugation to specific antibodies and can be a powerful technique for early medical diagnostics. 相似文献
947.
The differential cross-section for an intersubband electron Raman scattering process in a strained InGaN/GaN quantum well in the presence of an intense laser field is studied. In the effective-mass approximation, the electronic structure is calculated by taking into account the effects of spontaneous and piezoelectric polarization fields on the confinement potential. Effects of laser field strength, indium composition and the well width on the differential cross-section of the strained quantum well are investigated. Results show that the position and the magnitude of the peaks of emission spectra considerably depend on the laser field strength as well as structural parameters. 相似文献
948.
We study electron energies in a double concentric quantum ring with anisotropy in the rims heights in the presence of the external magnetic field applied along the symmetry axis. To this end, we consider a model in which the thickness grows linearly from the axis up to the inner rim with a slope different from one between the inner and the outer rims. The anisotropy in the rims heights originated by the presence in the structure of various valleys we simulate by periodic dependence of the slope on the radial direction. We show that the wave functions of the electron confined in such structure can be found analytically if the slopes in all radial directions are the same, and by using a simple exact diagonalization procedure otherwise. The behavior of the electron energies as functions of the magnetic field, rings radii and rims heights, as well as the number of the valleys and their depths is consistently described with our formalism. The entanglement of the states with different radial and orbital quantum numbers, the period and the amplitude of the Aharonov–Bohm oscillations are very sensible to any variations of the rims heights. 相似文献
949.
Within the effective mass approximation, the effects of the electric and intense laser fields on the binding energy and the photoionization cross-section of shallow-donor impurities in GaAs/GaAlAs parabolic quantum wires are investigated theoretically by using a variational method. The numerical results show that the electric and intense laser fields lead to significant changes in the binding energy and photoionization cross-section. 相似文献
950.
利用超快光谱技术系统研究了在丁胺包裹的CdSe量子点敏化的TiO2纳米晶薄膜起始时刻界面间电子转移动力学。与之前的报道不同,该实验结果表明:CdSe量子点经过表面修饰后,两相电子注入机制--热电子和冷电子注入得以被证实,即:电子能分别从CdSe量子点导带中高的振动能级和导带底转移到TiO2的导带。该机制详细描绘了电子在纳米界面间转移的图景。进一步研究发现:热电子注入的电子耦合强度(3.6±0.1 meV)比弛豫后的基态电子注入高两个数量级,基于Marcus理论,伴随着0.083 eV的重组能,冷电子注入的耦合强度值为~50 μeV。 相似文献