We have studied the effect of inelastic electron-phonon interaction on the spin-dependent transport properties of a molecule, trans-polyacetylene (trans-PA), as a molecular bridge sandwiched between two ferromagnetic (FM) electrodes. The work is based on a tight-binding Hamiltonian model within the framework of a generalized Green’s function technique and relies on the Landauer-Büttiker formalism as the basis for studying the current-voltage characteristic of this system. We use the wide-band approximation for FM electrodes. It is shown that due to inelastic interactions, the spin currents increase in a finite value of voltage and tunnel magnetoresistance (TMR) decreases compared with TMR obtained in the absence of phonons. 相似文献
A comparative study of the out-of-plane anisotropic magnetoresistance (AMR) in single crystalline and polycrystalline thin films of phase separated manganite Nd0.51Sr0.49MnO3 has been carried out. On-axis DC magnetron sputtering was used to deposit the single crystalline films (30 and 100 nm in thickness) on single crystal (0 0 1) LaAlO3 (LAO) and polycrystalline films (100 nm) on (1 0 0) Yttrium-stabilized ZrO2 (YSZ) substrates. The in-plane and out-of-plane magnetotransport properties of these films differ significantly. A large low field AMR is observed in all the films. AMR shows a peak below the insulator-metal transition temperature in the single crystalline films, while the same increases monotonically in the polycrystalline film. Relatively larger low field AMR (∼20% at T=78 K and H=1.7 kOe) in the polycrystalline films suggests the dominance of the shape anisotropy. 相似文献
Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. 相似文献
A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching of the layers is analyzed for a magnetic field perpendicular to the initial magnetizations. In such a situation, an additional peak in the tunnel magnetoresistance ratio appears at the magnetic field value that is substantially lower than the anisotropy field of the soft layer. 相似文献
We present an experimentalist's view of the theory and published data for the magnetoresistance (MR) of a multilayer composed of alternating ferromagnetic (F) and non-magnetic (N) metals measured with current flow perpendicular to the layer planes (CPP-MR). We explain the advantages of this geometry for determining the fundamental quantities underlying spin-polarized transport, describe the different techniques developed to measure the CPP-MR, summarize the salient features of the models used to analyze experimental data, and describe tests of those models. We then review what has been learned so far about spin-dependent scattering anisotropy and spin relaxation in F-metals and at F/N interfaces, specific resistances of F/N interfaces, the temperature dependence of spin-polarized transport parameters, and mixing of the spin-polarized electron currents. After a brief overview of some new directions, we conclude with a list of questions still to be answered. 相似文献
Hole-doped rare-earth manganite La0.7Ca0.3MnO3 and the electron-doped manganite La0.7Ce0.3MnO3 both show a metal-insulator transition around 250 K associated with a ferromagnetic transition and colossal magnetoresistance.
In an earlier publication we have reported the rectifying characteristic of La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3 tunnel junction at room temperature, showing that it is possible to fabricate a diode out of the polaronic insulator regime
of doped manganites. Here we report the magneto-transport properties of such a tunnel junction above and below the metal-insulator
transition. We show, from the large positive magnetoresistance of the tunnel junction at low temperature, that La0.7Ce0.3MnO3 could be a minority spin carrier ferromagnet. The implication of this observation is discussed. 相似文献
The influence of 200 keV Ar-ion irradiation on the interlayer coupling in the Fe/Cr multilayer system exhibiting the giant magnetoresistance effect (GMR) is studied by conversion electron Mössbauer spectroscopy (CEMS), VSM hysteresis loops, magnetoresistivity and electric resistivity measurements and supplemented by the small-angle X-ray diffraction (SAXRD). The increase of Ar ion dose causes an increase of interface roughness, as evidenced by the increase of the Fe step-sites detected by CEMS as a result of which the GMR gradually decreases and vanishes at doses exceeding 1×1014 Ar/cm2. A degradation of GMR with increasing Ar-ion dose is related to the formation of pinholes between Fe layers and the decrease of the antiferromagnetically coupled fraction.