Hydrogenated silicene based magnetic junction with improved tunneling magnetoresistance and spin-filtering efficiency

In this paper, hydrogenation is used for the generation of band gap in silicene and the hydrogenated silicene is then studied for its spintronic application. Upon hydrogenation, silicene transforms into a wide band gap material with a band gap of 3.32 eV. Parameters like magneto-resistance and spin-filtering efficiency of magnetic tunnel junction (MTJ) with CrO₂ as semi-metallic electrodes and hydrogenated silicene as scattering region are found to increase compared to pristine silicene as scattering region. The simulation results show that the magneto-resistance of hydrogenated silicene remains above 85% (higher than the pristine counterpart) for the entire bias range. In addition, the spin-filtering efficiency in hydrogenated silicene reaches a value as high as 96% whereas in case of pristine silicene it remains below 90% for the entire bias range.     

微观结构对溶胶-凝胶法合成的La0.67Sr0.33MnO3电磁性能影响

采用溶胶-凝胶法制备了不同烧结温度的钙钛矿类锰氧化物La0.67Sr0.33MnO3样品。实验结果表明,在1573 K以上烧结的样品,晶粒出现异常长大,晶界效应明显。随着烧结温度的提高,磁化强度逐渐增大,但样品的居里温度基本不变。此外,在1173和1573 K温度下烧结的样品,均出现了低于居里温度的金属-半导体导电行为转变。在合适的烧结条件下,可以观察到隧道磁电阻(TMR)和超大磁电阻(CMR)2种磁电阻效应。实验表明,自旋电子的输运,不仅与样品平均粒径的大小和密度有关,而且与晶界的微观结构有密切关系。     

Hydrogen Treatment for Superparamagnetic VO2 Nanowires with Large Room‐Temperature Magnetoresistance

One‐dimensional (1D) transition metal oxide (TMO) nanostructures are actively pursued in spintronic devices owing to their nontrivial d electron magnetism and confined electron transport pathways. However, for TMOs, the realization of 1D structures with long‐range magnetic order to achieve a sensitive magnetoelectric response near room temperature has been a longstanding challenge. Herein, we exploit a chemical hydric effect to regulate the spin structure of 1D V–V atomic chains in monoclinic VO₂ nanowires. Hydrogen treatment introduced V³⁺ (3d²) ions into the 1D zigzag V–V chains, triggering the formation of ferromagnetically coupled V³⁺–V⁴⁺ dimers to produce 1D superparamagnetic chains and achieve large room‐temperature negative magnetoresistance (?23.9 %, 300 K, 0.5 T). This approach offers new opportunities to regulate the spin structure of 1D nanostructures to control the intrinsic magnetoelectric properties of spintronic materials.     

La1/8Ca7/8MnO3/Sr0.95Nb0.05TiO3异质结的整流特性和磁输运性质

在5%Nb掺杂的SrTiO3衬底上用磁控溅射法外延生长了La1/aCa7/aMnO3薄膜形成异质结,该异质结有类似于传统P-n结的整流特性.磁场下扩散电压减小,当温度低于130 K以下,扩散电压的减小非常明显.这和在此温度以下,La1/8Ca7/aMnO3出现自旋倾斜态密切相关.我们计算出异质结的结电阻和磁致电阻(MR),在不同大小的正负偏压,不同磁场下,都得到负的MR值.我们给出界面附近的La1/8Ca7/8MnO3的能带结构并分析了外加磁场对洪德耦合,Jahn-Teller畸变等机制的作用,来解释该异质结的磁输运行为.结果有助于了解高Ca掺杂锰氧化物异质结的性质.     

Barrier degradation of tunneling magnetoresistance device with MgO barrier and low resistance-area product

MgO barrier degradation is studied in a tunneling magnetoresistance head with low resistance-area product. As the stress current is increased, the resistance is significantly reduced before the barrier breakdown, while the magnetoresistance ratio remains almost unvaried. At the same time, the bias dependence of the resistance becomes less affected by the bias polarity, suggesting that slight degradation occurs at the interface between MgO and the ferromagnetic electrode. Just before the breakdown, the bias dependence shows an increasing tendency, indicating the defect accumulation inside the MgO barrier. The results are helpful for understanding the mechanisms of barrier degradation, which is critical for developing future magnetic tunneling junction devices.     

Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3＋6 film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions： Prom the junction annealed-in-air to the junction annealedin-vacuum, the magnetoresistance near 0-V bias can vary from ～-60% to N～0. A possible mechanism accounting for this phenomenon is discussed.     

磁场下合成Fe3O4粉体的隧道磁阻

通过在半金属Fe₃O₄合成过程中外加磁场的方法，改变样品粒子的表面结晶状态和晶格缺陷，研究了由此引起的Fe₃O₄输运性质的变化.合成的Fe₃O₄粉体的主要导电机理均为自旋极化隧穿和高阶跃迁电导，电阻随温度升高成指数降低，电阻与电压显示了非线形相关性，磁阻与磁场的关系为蝴蝶形，是典型的隧道磁阻特征.与没有外加磁场时合成的样品比较，外加磁场合成的样品显示了更低的电阻和更高的磁阻.     

Effect of GMR and Magnetization Reversal on Microwave Absorption

Low-field microwave absorption has been measured as a function of magnetic field in a series of thin film structures exhibiting or not exhibiting the giant magnetoresistance effect (GMR). Although a close correlation has been found between the microwave absorption and GMR, an additional absorption due to magnetization reversal is shown to have substantial effect on the overall microwave response.     

高自旋极化氧化物材料的颗粒边界磁电阻效应

颗粒边界磁电阻是高自旋极化氧化物颗粒体系中由于颗粒边界的存在而导致显著的磁电阻效应。本文将这种磁电阻效应定义为颗粒边界磁电阻效应。这里所说的颗粒边界,包括各种自然和人工晶界、粉末颗粒表面、复合材料中的颗粒界面等多种情况;所涉及的材料包括高自旋极化氧化物多晶、压缩粉末和各种复合材料等。对颗粒边界磁电阻效应的研究,不仅有助于人们进一步理解高自旋极化氧化物磁输运性质的基本机制,并为寻求具有高磁电阻效应的新型自旋电子学器件提供理论基础。本文综述了高自旋极化氧化物颗粒边界磁电阻研究的主要背景和发展现状,介绍了该领域中主要的实验发现和理论模型,展望了未来的发展。     

Tunneling magnetoresistance of the double spin-filter junctions at nonzero bias

A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device.