全文获取类型
收费全文 | 6050篇 |
免费 | 971篇 |
国内免费 | 720篇 |
专业分类
化学 | 3209篇 |
晶体学 | 150篇 |
力学 | 1454篇 |
综合类 | 64篇 |
数学 | 621篇 |
物理学 | 2243篇 |
出版年
2024年 | 13篇 |
2023年 | 58篇 |
2022年 | 180篇 |
2021年 | 174篇 |
2020年 | 219篇 |
2019年 | 197篇 |
2018年 | 187篇 |
2017年 | 210篇 |
2016年 | 279篇 |
2015年 | 242篇 |
2014年 | 328篇 |
2013年 | 513篇 |
2012年 | 381篇 |
2011年 | 410篇 |
2010年 | 331篇 |
2009年 | 398篇 |
2008年 | 366篇 |
2007年 | 410篇 |
2006年 | 328篇 |
2005年 | 290篇 |
2004年 | 280篇 |
2003年 | 243篇 |
2002年 | 202篇 |
2001年 | 190篇 |
2000年 | 155篇 |
1999年 | 134篇 |
1998年 | 121篇 |
1997年 | 118篇 |
1996年 | 134篇 |
1995年 | 88篇 |
1994年 | 70篇 |
1993年 | 74篇 |
1992年 | 71篇 |
1991年 | 57篇 |
1990年 | 45篇 |
1989年 | 36篇 |
1988年 | 34篇 |
1987年 | 33篇 |
1986年 | 28篇 |
1985年 | 19篇 |
1984年 | 14篇 |
1983年 | 11篇 |
1982年 | 13篇 |
1981年 | 18篇 |
1980年 | 12篇 |
1979年 | 9篇 |
1978年 | 6篇 |
1973年 | 3篇 |
1971年 | 2篇 |
1957年 | 2篇 |
排序方式: 共有7741条查询结果,搜索用时 0 毫秒
131.
针对机油滤清器工作工况下进出口压差、机油滤层强度及导流桩高度等问题, 通过试验测试与仿真相结合, 对滤清器初步设计进行了评估及优化, 以确保滤清器在工作工况下进出口压降及滤层强度能满足要求. 首先进行滤层性能试验, 得到滤层的惯性阻力系数和黏性阻力系数; 再通过滤层多孔介质CFD分析, 对滤清器进出口压降进行分析计算. 结果表明: 在-18℃、25℃和70℃的工况下, 进出口压降都小于10kPa, 满足相关要求. 针对滤层的最大主应力超过其抗拉强度的问题, 通过CAE仿真分析, 优化滤层与导流桩间隙, 将滤层最大主应力由110.1MPa降至36.99MPa, 小于其抗拉强度42.8MPa. 相似文献
132.
The distinctive features of the atomic and electronic structure of thin surface layers of substances in the process of formation
of epitaxial silicon films on silicon are studied using the procedures of reflection and scattering of ultrasoft x-ray radiation.
The angular distribution of the scattered x-ray radiation (the scattering indicatrices) and the near fine structure of SiL2,3 spectra of reflection are investigated. The assumption of the sensitivity of the observed peak of anomalous scattering (the
Yoneda peak) of x-ray radiation to the presence, in the surface regions of the materials, of extended double-boundary defects,
the defects of packing, grain boundaries, dislocations, etc. is made. It is shown that the experimental procedure used makes
it possible to obtain information on the surface layers of substances.
Translated from Zhurnal Priklaldnoi Spektroskopii, Vol. 67, No. 4, pp. 496–498, July–August, 2000. 相似文献
133.
134.
135.
采用一种新的种子层材料:(Ni081Fe019)1-xCrx,通过改变种子层中Cr原子的含量,使得在其上生长的NiFeFeMn双层膜的织构和晶粒尺寸产生极大的差异,系统研究了NiFeFeMn双层膜中FeMn晶粒尺寸和织构对交换偏置的影响.实验结果表明,在FeMn的γ相(111)织构较好的前提下,交换偏置场的大小与织构的差异没有关系;FeMn的晶粒尺寸对交换偏置场有很大影响,较小的反铁磁层晶粒对交换偏置场有利,过大的反铁磁层晶粒不利于交换偏置场.将(Ni081Fe019)05Cr05与传统的种子层材料Ta进
关键词:
交换偏置
晶粒尺寸
织构
种子层 相似文献
136.
A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxide (SBO CBL SOI) is proposed.The step buried oxide locates holes in the top interface of the upper buried oxide (UBO) layer.Furthermore,holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide (LBO) layer.Consequently,the electric fields in both the thin LBO and the thick UBO are enhanced by these holes,leading to an improved breakdown voltage.The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer.Moreover,SBO CBL SOI can also reduce the self-heating effect. 相似文献
137.
Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation 下载免费PDF全文
By formation of an intermediate semiconductor layer (ISL) with a
narrow band gap at the metallic contact/SiC interface, this paper
realises a new method to fabricate the low-resistance Ohmic contacts
for SiC. An array of transfer length method (TLM) test patterns is
formed on N-wells created by P+ ion implantation into
Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic
contacts to n-type 4H-SiC could be formed by using Germanium ion
implantation into SiC. The specific contact resistance ρc as low as 4.23× 10-5~Ωega \cdotcm2 is
achieved after annealing in N2 at 800~°C for 3~min,
which is much lower than that (>900~°C) in the typical SiC
metallisation process. The sheet resistance Rsh of the
implanted layers is 1.5~kΩega /\Box. The technique for
converting photoresist into nanocrystalline graphite is used to
protect the SiC surface in the annealing after Ge+ ion
implantations. 相似文献
138.
首次用三道光纤探测器,伸入HL-1装置内真空室,采集活动石墨孔栏处等离子体光信号,用22m石英长光纤传输光信号至控制室进行观测。通过边界等离子体H_α和杂质辐射的时空分布,初步探讨了HL-1装置的脱离等离子体。 相似文献
139.
Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells 下载免费PDF全文
Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices. 相似文献
140.
Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer 下载免费PDF全文
The optical and physical properties of an InGaN light-emitting diode (LED) with a specific design of a staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement in optical performance compared with the design of a conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of the LED could be one of the main reasons for these improvements. 相似文献