Iodate Sensing Electrodes Based on Phosphotungstate‐ Doped‐Glutaraldehyde‐Cross‐Linked Poly‐L‐lysine Coatings

Glassy carbon electrode modified with phosphotungstate‐doped‐glutaraldehyde‐cross‐linked poly‐L ‐lysine (PLL‐GA‐PW) film was employed for iodate determination. The PLL‐GA‐PW film electrode shows excellent electrocatalytic activity towards iodate reduction with significant reduction of overpotential. Under optimized experimental conditions, a linear range from 5×10^?8 to 2.27×10^?2 M with a sensitivity of 61.75 μA mM^?1 was obtained. Possible interfering species, in iodate determination, were evaluated and the applicability of proposed sensor for iodate estimation in table salt was also demonstrated. The PLL‐GA‐PW film electrode shows fast response, wider linear range, and good selectivity and stability.     

The influence of initial surface conditions on field crystallization of anodic aluminum oxide films determined by synchrotron X‐ray diffraction

X‐ray diffraction measurements were performed using synchrotron radiation at the SPring‐8 facility and electrochemical techniques to investigate the effect of polishing methods and storage conditions on the crystal structure of air‐formed oxide films and anodic oxide films formed on highly pure aluminum. Storage in an N₂ environment hinders local film breakdown during anodizing, and it was established that the X‐ray diffraction measurements showed the presence of a γ‐Al₂O₃ in the anodic oxide film formed on mechanically polished (MP) specimens. Formation of γ‐Al₂O₃ during anodizing was inhibited by electropolishing because of the removal of the work‐hardened layer that was formed on the MP by electro‐polishing. The X‐ray diffraction results do not show clear differences in the influence of the polishing method on the crystal structure of air formed oxide film. This is due to the very fast oxidation rate of the air‐formed oxide film and very long storage times for the X‐ray measurements. The anodic oxide film formed on aluminum, which has a very flat surface, shows color and the color depended on grain orientation. The electrochemical impedance of the MP specimen is slightly lower than that of the mechanically and then electrochemically polished specimen at the middle frequency range. This impedance difference may be due to formation of γ‐Al₂O₃ in the amorphous anodic oxide film and the thickness of the film. Copyright © 2010 John Wiley & Sons, Ltd.     

Adsorptive Stripping Determination of Scandium(III) with Mordant Blue 9 on Silver Amalgam Film Electrode

A new adsorptive stripping voltammetric method for the determination of trace scandium(III) based on the adsorption of scandium(III)‐mordant blue 9 complex on the cyclic renewable mercury film silver based electrode (Hg(Ag)FE) is presented. The effects of various factors such as: preconcentration potential and time, pulse height, step potential and supporting electrolyte composition are optimized. The calibration graph is linear from 2 nM (0.09 μg L^?1) to 90 nM (4 μg L^?1) for a preconcentration time of 45 s, with correlation coefficient of 0.9995. For a Hg(Ag)FE with a surface area of 7.9 mm² the detection limit for a preconcentration time of 90 s is as low as 5 ng L^?1. The repeatability of the method at a concentration level of the analyte as low as 0.2 μg L^?1, expressed as RSD is 1.9 % (n=5). The proposed method was successfully applied and validated by studying the certified reference material (CRM 320 – river sediment) and natural samples with simultaneous recovery of Sc(III) from spiked water and sediment samples.     

Tin oxide coating on polytetrafluoroethylene films in aqueous solutions

Polytetrafluoroethylene (PTFE) films were successfully coated with tin oxide in aqueous solutions. Tin oxide was crystallized in the solution and formed nanocrystal coatings on the polymer films. The coatings consisted of SnO₂ and SnO crystals. They were assemblies of tin oxide nanosheet of about 10 to 50 nm in size and about 5 nm in thickness. The nanocrystal films can be exfoliated from the PTFE substrates. Tin oxide nanocrystal films had a rough liquid surface and a dense substrate‐side surface. Transparency of PTFE films coated with tin oxide was same as that of bare PTFE films in the range from 400 to 800 nm. The PTFE films coated with tin oxide nanocrystals can be pasted on desired substrates. Copyright © 2009 John Wiley & Sons, Ltd.     

Nanofibrous polyaniline thin film prepared by plasma‐induced polymerization technique for detection of NO2 gas

A nanofibrous polyaniline (PANI) thin film was fabricated using plasma‐induced polymerization method and explored its application in the fabrication of NO₂ gas sensor. The effects of substrate position, pressure, and the number of plasma pulses on the PANI film growth rate were monitored and an optimum condition for the PANI thin film preparation was established. The resulting PANI film was characterized with UV–visible spectrophotometer, FTIR, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The PANI thin film possessed nanofibers with a diameter ranging from 15 to 20 nm. The NO₂ gas sensing behavior was studied by measuring the change in electrical conductivity of PANI film with respect to NO₂ gas concentration and exposure time. The optimized sensor exhibited a sensitivity factor of 206 with a response time of 23 sec. The NO₂ gas sensor using nanofibrous PANI thin film as sensing probe showed a linear current response to the NO₂ gas concentration in the range of 10–100 ppm. Copyright © 2009 John Wiley & Sons, Ltd.     

纳米结构ZnO在TiO_2薄膜上的电化学沉积及其表征

在三电极体系中,以硝酸锌水溶液作为电解液,采用阴极还原电沉积法成功实现了一维纳米结构ZnO阵列在TiO2纳米粒子/ITO导电玻璃薄膜基底上的沉积,并通过XRD、SEM、EDS和PL光谱等方法对样品进行了表征.重点研究了薄膜基底、电解液浓度、沉积时间、六次亚甲基四胺(HMT)的引入对ZnO沉积及其发光性质的影响.结果显示:与ITO玻璃基底相比,ZnO更易于在TiO2纳米粒子薄膜上实现电化学沉积.ZnO属于六方晶系的铅锌矿结构,并且沿着c-轴方向表现出明显的择优化生长,以形成垂直于基底的ZnO纳米棒阵列.延长沉积时间、增加电解液浓度和引入一定量的HMT等均对ZnO的生长有促进作用,进而使其纳米棒的结晶度和取向程度提高,进而解释了所得的薄膜分别约在375和520nm处表现出ZnO的强而窄的带边紫外光发射峰和弱而宽的表面态绿光发射带.     

Anodic film formation on binary Al?Mg and Al?Ti alloys in nitric acid

Nitric acid is commonly used for surface treatments of aluminium alloys. It is used to clean the surfaces after alkaline etching; it has application in chemical polishing and is also used for electrograining. The majority of these treatments undergo the application of anodic polarisation that results in formation of anodic oxide film. However, little is known about the behaviour of aluminium containing magnesium or titanium in solid solution under such conditions. To reveal the effects of magnesium and titanium alloying additions on anodic film formation in nitric acid, Al‐1800 ppm Mg and Al‐800 ppm Ti alloys were investigated. It was found that porous alumina film developed on the surfaces with reduced efficiency of 40%, due to the reactive nature of nitric acid to alumina. The presence of magnesium and titanium in aluminium had little influence on the efficiency of film growth, as confirmed by the relatively similar thicknesses of oxide formed on binary alloys and aluminium. However, incorporation of magnesium ions into the alumina film led to development of a high‐population density of localised voids near the alloy/film interface. An increased titanium content was found in the film regions close to the alloy/film interface, indicating its oxidation. Copyright © 2009 John Wiley & Sons, Ltd.     

脉冲激光法制备修饰纳米Eu_2O_3/聚苯胺导电杂化薄膜

采用聚焦脉冲激光法(PLA-IT/SFL)制备修饰纳米Eu2O3/聚苯胺有机溶胶及其杂化薄膜材料。考察了制备条件对修饰纳米Eu2O3/聚苯胺有机溶胶荧光性能的影响。TEM显示Eu2O3粒子粒径约为15 nm且其在聚苯胺中有较高的稳定性。荧光光谱表明该杂化薄膜材料在紫外光照射下发出强烈的红光,且荧光强度达2.53×105a.u。杂化薄膜材料的电导率为1.13×10-2S.cm-1。热分析表明该杂化薄膜比导电性聚苯胺(PAN-HCSA)薄膜具有更好的热稳定性。该杂化薄膜材料可望用于电致发光领域。     

聚合物前驱体法制备立方相WO_3薄膜的光电化学性质

以(NH4)6W7O24·6H2O为钨源,聚乙二醇1000(PEG 1000)为配位聚合物,采用聚合物前驱体法制备了WO3薄膜,利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见(UV-Vis)吸收光谱等手段对其结构进行表征.采用循环伏安法、Mott-Schottky测试、瞬态光和稳态光电流谱等方法研究了WO3薄膜电极的光电化学性能.结果表明,制备的WO3薄膜为立方晶系,禁带宽度约为2.7eV.当热处理温度为450℃时,载流子浓度达到最大2.44×1022cm-3,平带电位为0.06V,在500W氙灯光源照射和1.2V偏压下,光电流密度为2.70mA·cm-2.进一步探讨了热处理温度对其光电性质的影响及其机理.     

Influence of the substrate temperature on the structural,optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

Thin films of tin selenide (SnSe) were deposited on sodalime glass substrates, which were held at different temperatures in the range of 350‐550 K, from the pulverized compound material using thermal evaporation method. The effect of substrate temperature (T_s) on the structural, morphological, optical, and electrical properties of the films were investigated using x‐ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission measurements, and Hall‐effect characterization techniques. The temperature dependence of the resistance of the films was also studied in the temperature range of 80‐330 K. The XRD spectra and the SEM image analyses suggest that the polycrystalline thin films having uniform distribution of grains along the (111) diffraction plane was obtained at all T_s. With the increase of T_s the intensity of the diffraction peaks increased and well‐resolved peaks at 550 K, substrate temperature, were obtained. The analysis of the data of the optical transmission spectra suggests that the films had energy band gap in the range of 1.38‐1.18 eV. Hall‐effect measurements revealed the resistivity of films in the range 112‐20 Ω cm for films deposited at different T_s. The activation energy for films deposited at different T_s was in the range of 0.14 eV‐0.28 eV as derived from the analysis of the data of low‐temperature resistivity measurements. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)