Unoccupied band dispersion of Si(1 1 1):√3 × √3-Ag surface studied by time- and angle-resolved two-photon photoemission spectroscopy

Band dispersion and transient population of unoccupied electronic states on Si(1 1 1):√3 × √3-Ag surface have been studied by time-resolved (TR) and angle-resolved (AR) two-photon photoemission (2PPE) spectroscopy. The band dispersions originating from unoccupied electronic states have been identified from the comparison between AR-2PPE spectra and angle-resolved one-photon photoemission spectra with synchrotron radiation. A lifetime of unoccupied surface state has been determined from the TR-2PPE spectra.     

Effective Two-State Model and NOON States for Double-Well Bose-Einstein Condensates in Strong-Interaction Regime

The model of double-well Bose-Einstein condensates in the strong-interaction regime is shown to reduce adiabatically to an effective two-state model describing the Rabi oscillations between the two atomic Fock states ｜N, 0〉 and [0, N〉, and the NOON states of arbitrary ultracold atoms can therefore be generated periodically from the initial state of either one of the Foek states.     

Physisorption kinetics of electrons at plasma boundaries

Plasma-boundaries floating in an ionized gas are usually negatively charged. They accumulate electrons more efficiently than ions leading to the formation of a quasi-stationary electron film at the boundaries. We propose to interpret the build-up of surface charges at inert plasma boundaries, where other surface modifications, for instance, implantation of particles and reconstruction or destruction of the surface due to impact of high energy particles can be neglected, as a physisorption process in front of the wall. The electron sticking coefficient s_e and the electron desorption time τ_e, which play an important role in determining the quasi-stationary surface charge, and about which little is empirically and theoretically known, can then be calculated from microscopic models for the electron-wall interaction. Irrespective of the sophistication of the models, the static part of the electron-wall interaction determines the binding energy of the electron, whereas inelastic processes at the wall determine s_e and τ_e. As an illustration, we calculate s_e and τ_e for a metal, using the simplest model in which the static part of the electron-metal interaction is approximated by the classical image potential. Assuming electrons from the plasma to loose (gain) energy at the surface by creating (annihilating) electron-hole pairs in the metal, which is treated as a jellium half-space with an infinitely high workfunction, we obtain s_e≈10^-4 and τ_e≈10^-2 s. The product s_eτ_e≈10^-6 s has the order of magnitude expected from our earlier results for the charge of dust particles in a plasma but individually s_e is unexpectedly small and τ_e is somewhat large. The former is a consequence of the small matrix elements occurring in the simple model while the latter is due to the large binding energy of the electron. More sophisticated theoretical investigations, but also experimental support, are clearly needed because if s_e is indeed as small as our exploratory calculation suggests, it would have severe consequences for the understanding of the formation of surface charges at plasma boundaries. To identify what we believe are key issues of the electronic microphysics at inert plasma boundaries and to inspire other groups to join us on our journey is the purpose of this colloquial presentation.     

Two-step laser excitation of the highly excited even-parity states of atomic mercury

We report term energies and quantum defects of highly excited even-parity states of mercury in the 83 876–84 140 cm^-1 energy range, employing a two-step laser excitation scheme via the S₀↦6s6p³P₁ inter-combination transition. Two dye lasers, pumped by a common Nd:YAG laser, were frequency doubled by BBO crystals and used to record the spectra in conjunction with a thermionic diode ion detector. Our new observations include the much extended D₂ (22 ≤n ≤52) series and a few members of the S₁ (24 ≤n ≤30) Rydberg series. Members of the D₂ Rydberg series with such a high n value are reported for the first time. The relative intensities of the D₂ and S₁ transitions (m = 4, 5 and 6) of group II-B elements excited from the P₁ inter-combination states are also discussed.     

Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

On textured n-type silicon substrates for solar cell manufacturing, the relation between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated by applying surface sensitive techniques. The field-modulated surface photovoltage (SPV), in-situ photoluminescence (PL) measurements, total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced micro-roughness and electronic properties of polished and textured silicon substrates. It was shown that isotropic as well as anisotropic etching of light trapping structures result in high surface micro-roughness and density of interface states. Removing damaged surface layers in the nm range by wet-chemical treatments, the density of these states and the related interface recombination loss can be reduced. In-situ PL measurements were applied to optimise HF-treatment times aimed at undamaged, oxide-free and hydrogen-terminated substrate surfaces as starting material for subsequent solar cell preparations.      

Dynamics of nuclei with antikaons

Self-consistent calculations of single -nuclear states and multi -nuclear states are briefly reviewed. Dynamical effects for deeply bound nuclear states are studied within the relativistic mean-field (RMF) approach. By varying the strength of -nucleus interaction, we cover a wide range of binding energies . Our calculations provide a lower limit on the widths of nuclear bound states for binding energy in the range . Substantial polarization is found in light nuclei for deeply bound nuclear states, with central nuclear densities about twice higher than for the corresponding nuclei without . Multi- nuclear calculations indicate that the binding energy per meson saturates upon increasing the number of mesons embedded in the nuclear medium. The nuclear and densities increase only moderately and are close to saturation, with no indication of any kaon-condensation precursor phenomena.     

The light σ-meson

In the framework of the dispersion relation N/D-approach, we restore the low-energy (IJ ^PC = 00^{+ +})-wave amplitude sewing it with the previously obtained K-matrix solution for the region 450-1900 MeV. The restored N/D-amplitude has a pole on the second sheet of the complex-s plane near the threshold, that is the light -meson. Received: 21 February 2000 / Accepted: 20 June 2000     

Dynamics of the current-driven Josephson junction

The irreversible macroscopic dynamics of the Josephson junction coupled to external wires acting as a current source is derived rigorously from the underlying microscopic Hamiltonian quantum mechanics. The external systems are treated in the singular coupling limit. The use of this limit is explicitly justified via an interpretation of the singular coupling limit in terms of the relative magnitudes of system, reservoir, and coupling energies. The qualitative behavior of the macroscopic dynamical equations is shown to depend sensitively and crucially on the interaction between the wires and the superconductors and on the size of the wires: the dc Josephson effect only happens when one lets Cooper pairs be driven into the junction by collective (i.e., small) reservoirs.     

Optical absorption in a semiconductor cylindrical nanolayer

In the effective-mass approximation the single-electron states in a semiconductor cylindrical nanolayer in the regime of strong quantization are considered. The explicit form of the energy spectrum and envelope wave functions of single-electron states is obtained in the case of large and moderate radii of the system. The corresponding absorption bands of dipole and quadrupole optical transitions in the layer are calculated.