Micro-patterning of vapor-phase polymerized poly(3,4-ethylenedioxythiophene) (PEDOT) using ink-jet printing/soft lithography

Highly conductive and transparent poly(3,4-ethylenedioxythiophene) (PEDOT) thin films can be prepared effectively via vapor-phase polymerization (VPP) with the addition of imidazole (Im) based derivatives. The addition of Im that has one and/or two alkyl substituents significantly improved the electrical conductivity of PEDOT thin films. In an effort to develop a facile PEDOT micro-patterning method, we investigated ink-jet printing and soft lithography. The procedure of oxidant patterning with a weak base followed by VPP of a 3,4-ethylenedioxythiophene (EDOT) monomer provides an effective and simple method for micro-patterning of an intrinsic conductive polymer (ICP).     

Monolithically integrated photonic-crystal devices with photodiodes

In this paper, we demonstrate the monolithic integration of a conventional waveguide, a photonic crystal demultiplexer, a photonic crystal taper coupler, photonic crystal waveguides, and photodiodes in InGaAsP-based material to form a planar nano-optics system. Photonic crystal demultiplexers consist of hexagonally arranged air holes. Finite-difference time-domain method is implemented to investigate the performance of the demultiplexer. The system is fabricated using e-beam lithography and conventional photolithography. The input light at wavelengths of 1530 and 1550 nm can be separated using the demultiplexing system. These can then be detected by photodiodes that exhibit a wide-bandwidth performance of 22 GHz.     

用于先进半导体制程的光刻反向计算技术(ILT)

此篇论文将介绍一个用于半导体光罩上图样设计以及可用于实际生产的光刻反向计算技术（ILT）。在论文中将讨论有关ILT的最新发展，包括在超成像极限协助图样（SRAF）的生成，可增加制程宽容度的ILT，以及如何生成满足光罩生产标准的图样等方面。从内部的研究结果和客户的使用结果可以看出，ILT已经不再只是一种用于研究的工具，而是已经可以用于先进半导体制程的大规模生产。在对各个环节优化之后，ILT可以增加制程的宽容度，同时将光罩的成本控制在可以接受的水平。     

严格电磁场波导方法的三维厚胶光刻工艺仿真（英）

无论是在微机电系统（MEMS）还是集成电路（IC）领域,SU-8厚胶光刻已经成为制造高深宽比结构的主流工艺。为了取代昂贵而耗时的光刻实验,一套能够良好预测显影形貌,从而为优化光刻制造提供有效帮助的光刻仿真软件就成为必要而有价值的工具。基于严格电磁场波导法的理论,给出一种针对SU-8光刻胶在紫外光下的三维光刻仿真模型。利用该模型,能很好地预测显影后的光刻胶内光强分布和立体形貌。并完成了一系列仿真和实验结果来验证模型的有效性。仿真结果给出横截面光强分布图和显影立体形貌模拟图形,并与相应的实验结果进行对照。结果验证了本文提出的仿真模型的正确性,并且表明三维混合模型在保证精确性的前提下,较之其他仿真算法运算速度更快。     

A novel method to measure coma aberration of projection system

A novel method to measure coma aberration by pattern displacements at different defocus positions is proposed in this paper. The effect of defocus on coma-induced pattern displacement is analyzed. The measuring principle of the method is described in detail. Using the simulation program PROLITH, the proportionality factors between pattern displacement and coma aberration at different defocus positions are calculated. It is proved that the method is simple to perform and the measurement accuracy of coma can increase approximately by 25% by this novel method.     

Manufacturing at Nanoscale: Top-Down,Bottom-up and System Engineering

The current nano-technology revolution is facing several major challenges: to manufacture nanodevices below 20 nm, to fabricate three-dimensional complex nano-structures, and to heterogeneously integrate multiple functionalities. To tackle these grand challenges, the Center for Scalable and Integrated NAno-Manufacturing (SINAM), a NSF Nanoscale Science and Engineering Center, set its goal to establish a new manufacturing paradigm that integrates an array of new nano-manufacturing technologies, including the plasmonic imaging lithography and ultramolding imprint lithography aiming toward critical resolution of 1–10 nm and the hybrid top-down and bottom-up technologies to achieve massively parallel integration of heterogeneous nanoscale components into higher-order structures and devices. Furthermore, SINAM will develop system engineering strategies to scale-up the nano-manufacturing technologies. SINAMs integrated research and education platform will shed light to a broad range of potential applications in computing, telecommunication, photonics, biotechnology, health care, and national security.     

X射线光刻技术的进展及问题

Ｘ射线光刻是一种能满足下世纪初超大规模集成电路（ＶＬＳＩ）生产的深亚微米图形加工技术。论述了这种光刻技术的发展历史及近年来的主要进展。重点讨论了在Ｘ射线源、接近式曝光和全反射投影曝光等方面取得的成就与存在的问题。展望了这种技术的发展前景