热等离子体裂解天然气制备C2烃

采用氮气热等离子体来裂解天然气制备乙炔乙烯,着重研究了天然气转化率和乙炔、乙烯收率随氮气流量和天然气流量的变化.结果表明,天然气流量与氮气流量之比为11时,可得到较好的结果.当等离子体功率为15kW、天然气流量为3Nm3*h-1、氮气流量为3Nm3*h-1时得到最好的结果.这时天然气转化率为57%,乙炔、乙烯的收率分别为34%和9%;乙炔在反应气中的体积浓度为7.5%,与部分氧化法相似;扣除不参加反应的氮气,乙炔在气相产品中的体积浓度为13.2%,与热力学平衡计算结果基本符合.     

影响产生均匀等离子体状态的几个因素

 用数值模拟方法研究利用辐射加热来产生均匀等离子体状态,它可被用来测量元素的辐射不透明度,校验辐射不透明度理论。研究了在辐射加热铁的“三明治”型靶时影响生成均匀等离子体状态的几个重要因素（样品厚度、CH膜厚度和辐射源）所起的作用，研究发现，当铁等离子体通过热传导达到均匀状态时，其尺度必须与此时的传热距离相当，从而定出铁样品的厚度；低Z介质CH膜对铁等离子体有明显的箍束作用，调整CH膜的厚度可以调节所产生的等离子体状态；调整不同方向上的CH膜厚度，可以控制铁等离子体的膨胀方向，使它尽可能地达到一维膨胀，使得反推出的等离子体密度可以更加准确；样品的种类、厚度以及外面的低Z介质厚度决定了在某时刻能获得的等离子体状态，以及为产生此等离子体状态所需的最低辐射能。     

X-ray photoelectron spectroscopy characterization of oxidated Si particles formed by pulsed ion-beam ablation

X-ray photoelectron spectroscopy (XPS) is used to probe oxidation states of Si species in particles deposited using a pulsed ion-beam evaporation method. The effects of He ambient gas, ion beam intensity and post-treatments on the oxides composition and oxygen content have been studied. It is found that presence of He ambient gas led to a profound oxidation of Si species as compared to that prepared in vacuum at the same ion-beam ablation energy, i.e. both increase of SiO₂ component and oxygen concentration in the oxides coverage. The deposition in He also resulted in an increase of oxygen concentration even under lower ablation intensity, but a higher Si suboxides concentration. It is revealed that the reaction between Si and O was controlled by the ion beam intensity (temperature of Si plasma) and the gas ambient (collision probability of Si and O species). The difference in structure of oxide layers for samples obtained under various conditions is discussed based on the results of XPS analyses.     

SILEX-1装置上等离子体尾场加速电子初步实验

激光等离子体加速电子机制可以产生准单能的高能电子束, 近年来成为国际上的研究热点. 中国工程物理研究院激光装置已经能够达到286TW的输出功率, 为国内在该领域的研究提供了实验条件. 文章介绍了在SILEX-1装置上开展的激光等离子体加速电子的初步实验, 并对测得结果进行讨论, 为下一步实验的进行提供了准备条件.     

聚变等离子体中的快离子压强

本文运用Fokker-Planck方程的慢化近似,考虑存在多种离子成份(包括杂质),假定它们具有共同的温度,我们得到了聚变产生的快离子压强的简单封闭形式表示式。表明在典型的工作温度下(～60keV),D-~3He等离子体中聚变产生的快离子压强约为本底热压强的20％,这与D-T等离子体工作在20keV时的比值几乎相同。因此,D-~3He和D-T在它们相应的预期工作温度下,它们各自的快离子压强对总压强的影响是类似的,然而在更高的温度下,这个比值将变得更大。     

Some applications of thermal field theory to quark-gluon plasma

We briefly introduce the thermal field theory within imaginary time formalism, the hard thermal loop perturbation theory and some of its applications to the physics of the quark-gluon plasma, possibly created in relativistic heavy-ion collisions     

我国低温等离子体研究进展(Ⅰ)

低温等离子体物理与技术的研究在国内受到了越来越多的重视．在等离子体中发现的一些有趣的物理现象，如磁场重联、尘埃等离子体等，使人们对等离子体物理的研究掀起了新的热潮．在应用方面，几乎所有理工类实验室都有涉及低温等离子体技术的实验装置，这使得在我国低温等离子体应用方面的研究非常普及，包括微电子工业中的等离子体工艺，各种坚硬、耐腐蚀、耐摩擦材料的制备，纳米材料的制备，聚合物以及生物材料的表面改性，等等．随着低温等离子体技术的发展，低温等离子体的诊断技术也随之发展起来．文章简要地介绍了近几年来低温等离子体研究在我国的发展，介绍了一些有关低温等离子体的热点研究课题．     

<Emphasis Type="Italic">Comment on</Emphasis>¶Low temperature specific heat of blue bronze K <Emphasis Type="Bold">0.30</Emphasis>MoO <Emphasis Type="Bold">3</Emphasis>, by J. Odin,J.C. Lasjaunias,K. Biljaković, K. Hasselbach,and P. Monceau

Eur. Phys. J. B 24, 315 (2001) Here we comment on a recently published paper on the presence of a phason contribution in the low temperature heat capacity data of the charge-density-wave compounds K_0.3MoO₃ and (TaSe₄)₂I. We have shown that the anomaly in the C _P / T ³ data reported by Odin et al. is straightforwardly interpreted in terms of low energy phonon modes resulting from the peculiar topology of these compounds. Received 21 February 2002 Published online 19 July 2002     

Preparation and Mechanical Properties of Fe3Al Nanostructured Intermetallics

Nanostructured Fe₃Al intermetallic compounds were produced by using hydrogen arc plasma method. The transmission electron microscopy experiments showed that the average particle size of the as-synthesized was about 40-nm. The change in hardness of Fe₃Al nanostructured intermetallic compounds with annealing temperatures was observed and evaluated.     

s波超导体绝缘层dx2-y2波超导体结的直流Josephson电流

在s波超导体绝缘层dx2-y2波超导体结(sId)中,考虑到结界面粗糙散射,运用BogoliubovdeGennes(BdG)方程和FurusakiTsukada(FT)电流公式,计算超导结中的准粒子传输系数和直流Josephson电流.结果表明:sId超导结的直流Josephson电流随温度以及结两侧的相位差变化的关系曲线强烈地依赖于d波超导体的晶轴方位;结界面的粗糙散射对Josephson电流有抑制作用 关键词： s/I/d超导结 dx2-y2波超导体 直流Josephson电流