Excitation dependent quenching of luminescence in LED phosphors

Droop, the decrease of efficiency with increased power density, became a major topic with InGaN LEDs, after its introduction in 2007. This paper provides insight into droop in localized center luminescence phosphors, exemplified here by Eu²⁺ doped materials. This topic is of increasing importance, as high brightness blue LEDs have reached outputs >1 W/mm². The nonlinearities in phosphor quantum efficiency result in drive‐dependent color point shift and reduction of overall efficiency of phosphor converted white LEDs which utilize Eu²⁺ activated phosphors. The efficiency quenching can be traced back to two processes, well‐known in laser physics, excited state absorption or/and cross relaxation by Foerster/Dexter transfer. Both processes lead to reduction in phosphor efficiency, but they can be differentiated. Understanding the root cause of efficiency quenching opens ways to minimize the practical consequences. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Spin–orbit stiffness of the spin‐polarized electron gas

In a spin‐polarized electron gas, Coulomb interaction couples the spin and motion degrees of freedom to build propagating spin waves. The spin wave stiffness S_sw quantifies the energy cost to trigger such excitation by perturbing the kinetic energy of the electron gas (i.e. putting it in motion). Here we introduce the concept of spin–orbit stiffness, S_so, as the energy necessary to excite a spin wave with a spin polarization induced by spin–orbit coupling. This quantity governs the Coulombic enhancement of the spin–orbit field acting of the spin wave. First‐principles calculations and electronic Raman scattering experiments carried out on a model spin‐polarized electron gas, embedded in a CdMnTe quantum well, demonstrate that S_so = S_sw. Through optical gating of the structure, we demonstrate the reproducible tuning of S_so by a factor of 3, highlighting the great potential of spin–orbit control of spin waves in view of spintronics applications. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Generation of a four-qubit cluster state for atoms in a thermal cavity

We propose two schemes for generating a four-atom cluster state in a thermal cavity. With the assistant of a strong classical field the photon-number-dependent parts in the effective Hamiltonian are canceled. Thus the schemes are insensitive to the thermal field. The schemes can also be used to generate the cluster state for the trapped ions in thermal motion.     

单色光束的衍射度

受近期Gawhary和Severini在Opt.Lett.33,1360(2008)一文中引入的光束近轴度的启发,定义了一个独立于光束近轴度的衍射度参数来描述单色光束的衍射扩散程度,所定义的衍射度只依赖于光束的角谱分布,并可以定量比较不同光束的衍射扩散程度.     

利用固体物理LED发光原理测量普朗克常数

普朗克常数是物理学中一个重要的常数,利用二极管的量子特性探讨运用发光二极管来测量普朗克常数。通过测量二极管的伏安曲线,确定其阈值电压,根据相关量子理论,间接得出普朗克常数,通过与光电效应法测量普朗克常数的测量结果相比较,结果表明此误差略大,但作为一种新型的实验方法探索,对于开拓学生的综合素养还是非常有益的。     

分光计调整方法的改进及白光色散研究

普通物理实验中使用分光计观察白光散射,测量三棱镜顶角,最小偏向角等。但在测量前需借助三棱镜调整分光计,有人通过理论分析发现传统的调节方法存在误调和误差,并提出了改进的实验调整方法。本文我们通过实验来验证该方法是否可行,并在实验中发现了其它的问题。     

Direct detection of carrier traps in Si solar cells after light‐induced degradation

In solar cells fabricated from boron‐doped Cz‐Si wafers minority and majority carrier traps were detected by deep level transient spectroscopy (DLTS) after so‐called “light‐induced degradation” (LID). The DLTS signals were detected from mesa‐diodes with the full structure of the solar cells preserved. Preliminary results indicate metastable traps with energy levels positioned at E_V + 0.37 eV and E_C – 0.41 eV and apparent carrier capture cross‐sections in the 10^–17–10^–18 cm² range. The concentration of the traps was in the range of 10¹²–10¹³ cm^–3. The traps were eliminated by annealing of the mesa‐diodes at 200 °C. No traps were detected in Ga‐doped solar cells after the LID procedure or below the light protected bus bar locations in B‐doped cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Accelerated formation of the boron–oxygen complex in p‐type Czochralski silicon

This Letter reports on the acceleration of the rate of formation of the boron–oxygen defect in p‐type Czochralski silicon with illumination intensities in excess of 2.1 × 10¹⁷ photons/cm²/s. It is observed that increased light intensities greatly enhance the rate of defect formation, without increasing the saturation concentration of the defect. These results suggest a dependence of the defect formation rate upon the total majority carrier concentration. Finally, a method using temperatures up to 475 K and an illumination intensity of 1.68 × 10¹⁹ photons/cm²/s is shown to result in near‐complete defect formation within seconds. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)