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41.
研究了非晶氧化锌镓铟薄膜晶体管(amorphous InGaZnO thin-film transistor,InGaZnO TFT)的泄漏电流模型.基于Poole-Frenkel热发射效应和热离子场致发射效应的泄漏电流产生机制,分别得到了高电场和低电场条件下的载流子产生-复合率.在此基础上推导得到了InGaZnO TFT的分段式泄漏电流-电压数学模型,并利用平滑函数得到了关断区和亚阈区连续统一的泄漏电流模型.所提出的泄漏电流模型的计算值和TCAD模拟值与实验结果较为吻合.利用所提出的InGaZnO TFT泄漏电流模型和TCAD模拟,讨论了InGaZnO TFT不同的沟道宽度、沟道长度和栅介质层厚度对泄漏电流值的影响.研究结果对InGaZnO TFT集成传感电路的设计具有一定参考价值. 相似文献
42.
具有径向流的间隙结构广泛存在于轴承结构与旋转机械中,间隙中的流固耦合作用可能影响整体结构的运动稳定性。基于理论间隙模型和核主泵的实际结构,本文对径向间隙流引起的轴向振动进行了多方面的研究。当间隙的一个壁面产生轴向振动并处于旋转状态时,壁面受到由径向流引起的时变轴向力,因此间隙为叶轮提供附加的轴向刚度和阻尼。通过研究以水为介质的理论间隙模型,发现径向间隙流会引起负的等效轴向动力系数(刚度和阻尼),并且流道形状是影响间隙轴向动力特性的重要因素。扩张流道和平行流道会产生负的轴向动力系数,特别是负阻尼会引起结构振动发散;而收缩流道间隙具有稳定的轴向动力特性。最后,对AP1000核主泵原型叶轮间隙模型进行分析,结果表明,间隙会引起轴向负刚度,并且在一定工况下出现负阻尼,此时系统轴向稳定性及结构安全运行将受到严重的不良影响。 相似文献
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44.
On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases
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In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage(I–V –T) characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to-150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer.A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I–V curves is obtained. 相似文献
45.
Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process
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In the process of high-k films fabrication, a novel multi deposition multi annealing(MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing(PDA) times. The equivalent oxide thickness(EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore,the characteristics of SILC(stress-induced leakage current) for an ultra-thin SiO_2/HfO_2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes. 相似文献
46.
Tian-Yu Ye 《理论物理通讯》2016,66(3):280-290
Recently, Liu et al. proposed a two-party quantum private comparison (QPC) protocol using entanglement swapping of Bell entangled state (Commun. Theor. Phys. 57 (2012) 583). Subsequently, Liu et al. pointed out that in Liu et al.'s protocol, the TP can extract the two users' secret inputs without being detected by launching the Bell-basis measurement attack, and suggested the corresponding improvement to mend this loophole (Commun. Theor. Phys. 62 (2014) 210). In this paper, we first point out the information leakage problem toward TP existing in both of the above two protocols, and then suggest the corresponding improvement by using the one-way hash function to encrypt the two users' secret inputs. We further put forward the three-party QPC protocol also based on entanglement swapping of Bell entangled state, and then validate its output correctness and its security in detail. Finally, we generalize the three-party QPC protocol into the multi-party case, which can accomplish arbitrary pair's comparison of equality among K users within one execution. 相似文献
47.
Annealing effect of platinum-incorporated nanowires created by focused ion/electron-beam-induced deposition
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Focused ion-beam-induced deposition(FIBID) and focused electron-beam-induced deposition(FEBID) are convenient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum precursor, the conductive lines directly written by focused ion-beam(FIB) and focused electron-beam(FEB) are carbon-rich materials. We discuss an alternative approach to enhancing the platinum content and improving the conductivity of the conductive leads produced by FIBID and FEBID, namely an annealing treatment. Annealing in pure oxygen at 500?C for 30 min enhances the platinum content values from ~18% to 30% and ~ 50% to 90% of FIBID and FEBID, respectively. Moreover, we find that thin films will be formed in the FIBID and FEBID processes. The annealing treatment is helpful to avoid the current leakage caused by these thin films. A single electron transistor is fabricated by FEBID and the current–voltage curve shows the Coulomb blockade effect. 相似文献
48.
How to solve the information leakage problem has become the research focus of quantum dialogue. In this paper, in order to overcome the information leakage problem in quantum dialogue, a novel approach for sharing the initial quantum state privately between communicators, i.e., quantum encryption sharing, is proposed by utilizing the idea of quantum encryption. The proposed protocol uses EPR pairs as the private quantum key to encrypt and decrypt the traveling photons, which can be repeatedly used after rotation. Due to quantum encryption sharing, the public announcement on the state of the initial quantum state is omitted, thus the information leakage problem is overcome.The information-theoretical efficiency of the proposed protocol is nearly 100%, much higher than previous information leakage resistant quantum dialogue protocols. Moreover, the proposed protocol only needs single-photon measurements and nearly uses single photons as quantum resource so that it is convenient to implement in practice. 相似文献
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50.
像面数字全息是数字全息技术中常用的测量和成像方式,它通常采用离散傅里叶变换和频率滤波的方法进行物光波的重建.本文讨论了这些算法对重建相位的影响.首先分析了频谱泄露对于相位误差的影响,结果表明当采样周期为整数时,重建相位误差很小,因此具有极高的相位重建精度;而当不满足整周期采样时,相位重建误差有了明显的增加.为了改善频谱泄露所引起的相位误差,采用Hanning函数对数字全息图进行了预处理,结果表明Hanning窗的加入能够有效地提高重建相位的准确程度. 相似文献