Generalized Bethe ansatz solution of a one-dimensional asymmetric exclusion process on a ring with blockage

We present a model for a one-dimensional anisotropic exclusion process describing particles moving deterministically on a ring of lengthL with a single defect, across which they move with probability 0 p 1. This model is equivalent to a two-dimensional, six-vertex model in an extreme anisotropic limit with a defect line interpolating between open and periodic boundary conditions. We solve this model with a Bethe ansatz generalized to this kind of boundary condition. We discuss in detail the steady state and derive exact expressions for the currentj, the density profilen(x), and the two-point density correlation function. In the thermodynamic limitL the phase diagram shows three phases, a low-density phase, a coexistence phase, and a high-density phase related to the low-density phase by a particle-hole symmetry. In the low-density phase the density profile decays exponentially with the distance from the boundary to its bulk value on a length scale . On the phase transition line diverges and the currentj approaches its critical valuej _c = p as a power law,j _c – j ^–1/2. In the coexistence phase the width of the interface between the high-density region and the low-density region is proportional toL ^1/2 if the density f 1/2 and=0 independent ofL if = 1/2. The (connected) two-point correlation function turns out to be of a scaling form with a space-dependent amplitude n(x₁, x₂) =A(x₂)A ^Ke^–r/ withr = x ₂ –x ₁ and a critical exponent = 0.     

New formulation of restricted growth processes

We present a new formulation of a class of growth models-those which evolve according to an exclusion process. This formulation is based upon a transformation of the probability distribution function which involves Grassmann variables. This method is very general and enables one to derive an exact stochastic differential equation for the model of interest. We describe this method using the traffic model as an example.     

Detecting positive feedback in multivariate time series: The case of metal prices and US inflation

The objective of this paper is to examine causality and feedback relationships between primary commodity prices and US inflation. To this end, the bivariate noisy Mackey–Glass process recently developed by Kyrtsou and Labys [Evidence for chaotic dependence between US inflation and commodity prices, J. Macroecon. 28(1) (2006) 256–266] has been applied to assess this relationship. Results obtained support evidence in favour of causality, which can help to identify the influences of speculative price behaviour on inflation.     

A non-thermal chemical synthesis of hydrophilic and amorphous cobalt oxide films for supercapacitor application

Present work explored a room temperature, simple and low cost chemical route for the preparation of hydrophilic cobalt oxide films from alkaline cobalt chloride (CoCl₂:6H₂O) and double distilled water precursor solutions. As-deposited cobalt oxide films showed amorphous nature, which is one of the prime requirements for supercapacitor, as confirmed from X-ray diffraction studies. Changes in direct band gap energy and electrical resistivity of as-deposited cobalt oxide films were confirmed after annealing. Spherical grains of about 40-50 nm diameters were uniformly distributed over the substrate surface. Surface wettability studied in contact with liquid interface, showed hydrophilic nature as water contact angle was <90°. Finally, presence of cobalt-oxygen covalent bond was observed from Raman shift experiment.     

Nd:YAG laser synthesis of nanostructural V2O5 from vanadium oxide sols: Morphological and structural characterizations

Vanadium oxide thin films were prepared by sol-gel method, then subjected to Nd:YAG laser (CW, 1064 nm) radiation. The characteristics of the films were changed by varying the intensity of the laser radiation. The nanocrystalline films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). XRD revealed that above 102 W/cm² the original xerogel structure disappears and above 129 W/cm² the films become totally polycrystalline with an orthorhombic structure. From TEM observations, we can see that due to laser radiation, the originally fibrillar-like particles disappear and irregular shaped, layer structured V₂O₅ particles are created. From XPS spectra we can conclude that due to laser radiation the O/V ratio increased with higher intensities.     

标量介子f0(980)光生过程γp→pf0(980)的研究

轻标量介子性质研究是当今中高能核物理研究中的热点问题之一,特别是质量低于1 GeV的标量介子f₀（980）的内部结构一直存在争议,至今未达成共识。基于前人的研究结果,运用有效拉氏量方法,对f₀（980）粒子的光生过程γp→pf₀（980）进行了更深入的理论研究。探讨了两种传播子形式下得矢量介子ρ和ω交换的贡献,第一种是选择雷吉传播子,第二种是选择普通费曼传播子。第二种形式的微分散射截面理论结果与现有实验数据符合比第一种形式的结果好。基于此,计算了两种形式的总截面,两种形式给出的理论结果相差很大。另外,给出了γp→pf₀（980）→pπ+π-过程的π+π-不变质量分布的理论预言,发现π+π-不变质量分布对于f₀（980）于K-K的耦合常数（g_f0KK）有很强的依赖关系,不同的g_f0KK给出明显不同的π+π-不变质量分布。将来相关实验数据可以验证这些理论预言,并对矢量介子传播子形式和耦合常数g_f0KK做出限制,加深人们对f₀（980）粒子的认识。We study the scalar meson f0(980) in the γp→pf0(980) reaction within an effective Lagrangian approach. Based on previous studies, we calculate the differential cross sections of this reaction. We take two types of the propagators of vector mesons ρ and ω, one is the Regge form, the other one is the normal Feynman propagator. It is found that our theoretical results for the differential cross sections with the Feynman propagator are in agreement with the current experimental data. For the total cross sections, the results with the two types of propagator are much different. On the other hand, we predict the π+π- invariant mass distribution of the γp→pf0(980)→pπ+π- reaction. We find that the π+π- invariant mass distribution depends sensitively on the value of the coupling constant gf0KK. We hope that the future experiments can test our model calculation and give further constraints on the value of gf0KK and also the nature of f0(980).     

Study on electrical defects level in single layer two-dimensional Ta_2O_5

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta_2O_5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta_2O_5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta_2O_5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta_2O_5,exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta_2O_5.     

The rotational anisotropies in the ferromagnetism/antiferromagnetism 1/ antiferromagnetism 2 exchange bias structures

The rotational anisotropies in the exchange bias structures of ferromagnetism/antiferromagnetism 1/antiferromagnetism 2 are studied in this paper. Based on the model, in which the antiferromagnetism is treated with an Ising mean field theory and the rotational anisotropy is assumed to be related to the field created by the moment induced on the antiferromagnetic layer next to the ferromagnetic layer, we can explain why in experiments for ferromagnetism (FM)/antiferromagntism 1 (AFM1)/antiferromagnetism 2 (AFM2) systems the thickness-dependent rotational anisotropy value is non-monotonic, i.e. it reaches a minimum for this system at a specific thickness of the first antiferromagnetic layer and exhibits oscillatory behaviour. In addition, we find that the temperature-dependent rotational anisotropy value is in good agreement with the experimental result.     

Improved Lower Bounds for the Critical Probability of Oriented Bond Percolation in Two Dimensions

We present a coupled decreasing sequence of random walks on Z that dominate the edge process of oriented bond percolation in two dimensions. Using the concept of random walk in a strip, we describe an algorithm that generates an increasing sequence of lower bounds that converges to the critical probability of oriented percolation p_c. From the 7th term on, these lower bounds improve upon 0.6298, the best rigorous lower bound at present, establishing 0.63328 as a rigorous lower bound for p_c. Finally, a Monte Carlo simulation technique is presented; the use thereof establishes 0.64450 as a non-rigorous five-digit-precision (lower) estimate for p_c. Mathematics Subject Classification (1991): 60K35 Supported by CNPq (grant N.301637/91-1). Supported by a grant from CNPq.     

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

A new ultra-low specific on-resistance(Ron,sp) vertical double diffusion metal–oxide–semiconductor field-effect transistor(VDMOS) with continuous electron accumulation(CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration(Nn). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp.Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS(CSJ-VDMOS)at the same high breakdown voltage(BV).