Uniform random number generation

In typical stochastic simulations, randomness is produced by generating a sequence of independent uniform variates (usually real-valued between 0 and 1, or integer-valued in some interval) and transforming them in an appropriate way. In this paper, we examine practical ways of generating (deterministic approximations to) such uniform variates on a computer. We compare them in terms of ease of implementation, efficiency, theoretical support, and statistical robustness. We look in particular at several classes of generators, such as linear congruential, multiple recursive, digital multistep, Tausworthe, lagged-Fibonacci, generalized feedback shift register, matrix, linear congruential over fields of formal series, and combined generators, and show how all of them can be analyzed in terms of their lattice structure. We also mention other classes of generators, like non-linear generators, discuss other kinds of theoretical and empirical statistical tests, and give a bibliographic survey of recent papers on the subject.     

Partition Lattice q-Analogs Related to q-Stirling Numbers

We construct a family of partially ordered sets (posets) that are q-analogs of the set partition lattice. They are different from the q-analogs proposed by Dowling [5]. One of the important features of these posets is that their Whitney numbers of the first and second kind are just the q-Stirling numbers of the first and second kind, respectively. One member of this family [4] can be constructed using an interpretation of Milne [9] for S[n, k] as sequences of lines in a vector space over the Galois field F _q. Another member is constructed so as to mirror the partial order in the subspace lattice.     

Deformations of complex structures on Γ/SL 2(C)

LetG be a connected complex semisimple Lie group. Let Γ be a cocompact lattice inG. In this paper, we show that whenG isSL ₂(C), nontrivial deformations of the canonical complex structure onX exist if and only if the first Betti number of the lattice Γ is non-zero. It may be remarked that for a wide class of arithmetic groups Γ, one can find a subgroup Γ′ of finite index in Γ, such that Γ′/[Γ′,Γ′] is finite (it is a conjecture of Thurston that this is true for all cocompact lattices inSL(2, C)). We also show thatG acts trivially on the coherent cohomology groupsH ⁱ(Γ/G, O) for anyi≥0.     

Strongly Modular Subgroup in Finite Group

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EicC对撞光学设计

EicC是中国科学院近代物理研究所计划建造的中国电子-离子对撞机装置,该对撞机质心能位于20 GeV附近,是研究海夸克的最佳能量窗口,同时还可研究胶子和价夸克。EicC对撞粒子为高极化率质子和电子束团,质子环pRing采用八字环设计方案,可以更好地保持极化质子束团极化率,电子环eRing采用跑道形环设计方案,可以更好地利用隧道空间。该装置电子束流能量中心值为3.5 GeV,电子束RMS发射度为水平方向60 nm·rad,垂直方向60 nm·rad,对撞点b函数为水平方向0.4 m,垂直方向0.12 m;质子束流能量中心值20 GeV,质子束RMS发射度为水平方向300 nm·rad,垂直方向180 nm·rad,对撞点b函数为水平方向0.08 m,垂直方向0.04 m,设计亮度2×1033 cm–2s–1。EicC采用双对撞区非对称光学设计,通过对EicC不同色品补偿方案的研究,最终确定了弧区加短直线节共同补偿的色品补偿方案;通过研究对撞点处b函数以及对撞点间相移对动力学孔径的影响,最终得到pRing动力学孔径大于8 s(s为束团RMS尺寸)、eRing动力学孔径大于20 s,满足大于束团尺寸6 s的要求。     

三维格子Boltzmann方法研究上升双气泡的运动特性

应用格子Boltzmann三维模型，对双气泡在静水中的运动进行数值研究.采用八点差分和十八点差分格式分别求解一阶▽φ和二阶▽²φ可以有效避免气液密度比过大造成的数值不稳定问题.结果表明：当两个相同直径的气泡在上升时，位置靠上的气泡形状变化像单气泡上升一样，而位置靠下的气泡会受到前一个气泡尾迹的影响，并有很明显的形状变化.当两个气泡直径不同时，不管初始位置如何，大气泡总会对小气泡造成强烈的影响.     

Efficient Quantum Dot Light-Emitting Diodes Based on Well-Type Thick-Shell CdxZn1−xS/CdSe/CdyZn1−yS Quantum Dots

Device grade quantum dots (QDs) require QDs ensembles to retain their original superior optical properties as in solution. QDs with thick shells are proven effective in suppressing the inter-dot interaction and preserving the emission properties for QDs solids. However, lattice strain–induced defects may form as the shell grows thicker, resulting in a notable photoluminescence quenching. Herein, a well-type Cd_xZn_1−xS/CdSe/Cd_yZn_1−yS QDs is proposed, where ternary alloys CdZnS are adopted to match the lattice parameter of intermediate CdSe by separately adjusting the x and y parameters. The resultant thick-shell Cd_0.5Zn_0.5S/CdSe/Cd_0.73Zn_0.27S QDs reveal nonblinking properties with a high PL QY of 99% in solution and 87% in film. The optimized quantum dot light-emitting diodes (QLEDs) exhibit a luminance of 31547.5 cd m⁻² at the external quantum efficiency maximum of 21.2% under a bias of 4.0 V. The shell thickness shows great impact on the degradation of the devices. The T₅₀ lifetime of the QLEDs with 11.2 nm QDs reaches 251 493 h, which is much higher than that of 6.5 and 8.4 nm QDs counterparts. The performances of the well-type thick-shell QLEDs are comparable to state-of-the-art devices, suggesting that this type of QDs is a promising candidate for efficient optoelectronic devices.     

The area within a curve

The area of a simple closed convex curve can be estimated in terms of the number of points of a square lattice that lie within the curve. We obtain the usual error bound without integration using a form of the Hardy—Littlewood—Ramanujan circle method, and also present simple estimates for the mean square error.     

Effects on the evolution of microstructure and properties of low-silicon cast aluminum alloys in service

ABSTRACT

The microstructure evolution and property change of four kinds of low silicon cast aluminum alloy exposed to heat for 0–50?h at 200°C were studied by means of Brinell hardness test, tensile property test, friction and wear property test and XRD analysis. The results show that with increasing thermal exposure time, the tensile strength of each group of samples decreased and the amount of wear increased. The tensile strength of samples with more Si content decreased slowly. When the time increased to 50?h, the increase of wear loss was the largest. The hardness of samples after thermal exposure increases compared with that before thermal exposure. The residual stress of (311) diffraction crystal surface of AlSi3.5Mg0.66 under different thermal exposure time was measured. The type of residual stress changed from residual tensile stress to residual compressive stress after thermal exposure. There is an abnormal phenomenon that the hardness of the sample increased and the amount of wear increased, and it is evident that the distribution of residual stress was inhomogeneous after thermal exposure. It is found that with increasing thermal exposure time to 50?h, the average lattice distortion ε of the low-index crystal plane and the high-index crystal plane in the aluminum alloys gradually increased.     

Free energy of the solvable chiral Potts model

Very recently, it has been shown that there are chiralN-state Potts models in statistical mechanics that satisfy the star-triangle relation. Here it is shown that the relation implies that the free energy (and its derivatives) satisfies certain functional relations. These can be used to obtain the free energy: in particular, we expand about the critical case and find that the exponent is 1–2/N.