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981.
自粘结低硅铝X型沸石的结构、吸附和N_2/O_2分离比   总被引:2,自引:0,他引:2  
用原位合成方法直接将高岭土转化为所需形状的低硅X型沸石(PLSX),经X衍射,~(29)Si,~(27)AI MAS NMR谱证实PLSX的结构硅铝比接近1,它含LSX的组成为40.40%,含4A的组成为17.92%,其余为无定形硅、铝氧化物.LSX的骨架硅铝比接近1,是骨架负电荷分配最均匀的X型沸石,293K时静态法测定和推算ISX的饱和吸附水达39.80wt%,LSX的组成为Na(96-x)K_x(Al_(96)S_i(96)O_(384))·310H_2O,是吸附量高、价廉的吸水剂.PLSX对空气中氮氧的分离系数为α(N_2/O_2)=3.15,高于用于PSA的商品5A的α(N_2/O_2)=2.33和已报道的13X的α(N_2/O_2)=2.36.PLSX也是一种极好的吸附分离剂.  相似文献   
982.
We have investigated on the synthesis of Ba1 – xSrxTiO3 (BST, x = 0.0–1.0) solid solution at low temperature by a sol-gel method using precursor solutions of Ba(OC2H5)2, Sr(OC2H5)2, and Ti(OCH(CH3)2)4 dissolved in 2-methoxyethanol. Crystalline BST solid solution monolithic gels were obtained as dried at 90°C. Crystalline fraction of BST gels increased with increasing concentration of the precursor solution and increasing amount of the hydrolysis water used. Ba0.4Sr0.6TiO3 (x = 0.6) gels from a precursor solution of 0.5 mol/l with hydrolysis water of H2O/Ti = 50 crystallized during aging at 30°C.  相似文献   
983.
Concentrated suspensions of charged monodisperse spherical silica particles (MSSP) stabilized by alkalis or ammonia are able to crystallize at a certain destabilization. Crystal structures with the particles fixed at certain distances from each other show an isotropic normal mechanism of continuous growth with a rough phase boundary. The crystallization is determined by three parameters,víz. the concentration of particles, temperature, the thickness of the ion atmosphere around the particles and the concentration of counterions. The crystallization of MSSP suspensions is considered as a model of the supramolecular crystallization in the field of synthesis of mesoporous structures.  相似文献   
984.
Poly(3-dodec})lthiophene).asakindofconductiveconjugatedpolymer,cancrystallizetoacertaindegreeduetotheintroductionofflexiblealkylsidechain.Forpoly(3alkylthiophenes)(P3ATs).havinggreatpotentialapplicability'=,itisimportantandnecessarytostudytheircrystallizationbehavior.DSCcurvesarerecordedwhenP3DDTiscooledfromthemoltenstateattheconstantrateof5.0"C/min,10.0'C/min,15.0'C/minalld20.0"C/minundernitrogenpurge,asseeninFigure1.Thepeakpositionshiftstolowertemperaturewiththeincreaseofcoolingrate,wh…  相似文献   
985.
Time-resolved synchrotron wide- and small-angle X-ray scattering experiments were used to investigate crystallization behavior and microstructure development of a nearly monodisperse poly(ethylene oxide) [PEO] (Mw = 53,500), and its melt-miscible blends with two fractionated styrene - hydroxystyrene random copolymers [SHS]. PEO crystallization rates decrease significantly in the presence of the melt-miscible SHS copolymers. All low and high molecular weight SHS blends exhibit a crystallization process at relatively short times characterized by large Avrami exponents (n), followed by a dominant process with n near that of neat PEO. A model for the crystallization of these blends is proposed.  相似文献   
986.
Crystallization of semi-crystalline polyolefins (i-polypropylenes and HD-polyethylenes) in their blends with amorphous cycloolefin copolymers (COC) were studied. The thermal behaviour of the blends was characterized by Differential Scanning Calorimetry (DSC) whereas blend morphologies were investigated by Scanning Electronic Microscopy (SEM). In iPP/COC blends, a phenomenon of fractionated crystallization is evidenced when i-PP is finely dispersed in the COC matrix. Such a behavior is generally observed when the number of droplets is much larger than the number of heterogeneities originally present in the bulk polymer. In HDPE/COC blends, complex morphologies are observed which do not fit good correlation with DSC results. The nucleation and crystallization modes seem to be largely influenced by the characteristics of the micro-dispersed phase, largely dependent on the PE molecular weights and polydispersity indices.  相似文献   
987.
Hydrogenated amorphous silicon films (α‐Si:H) were crystallized employing a metal induced crystalline (MIC) technique. Structural changes during annealing these films at 300 °C for different periods (0‐300 minutes) were obtained by XRD. Al was used as a metal induced crystalline for α‐Si:H produced by ultra high vacuum (UHV) plasma enhanced chemical vapor deposition (PECVD). XRD shows that crystallization of the interacted α‐Si:H film underneath Al initiates at 300 °C for 15 minutes. A complete crystallization was obtained after annealing for 60 minutes. A gold dot was evaporated onto α‐Si:H films, which annealed for different periods to form Schottky barriers. Electrical properties of Au/α‐Si:H were calculated such as the ideality factor, n, barrier height, ΦB, donor concentration, ND, and the diffusion voltage, Vd, as a function of the annealing time of α‐Si:H films. All these parameters were carried out through the current voltage characteristics (J‐V) and the capacitance voltage measurements (C‐V). The results were presented a discussed on the basis of XRD performance and the thermionic emission theory.  相似文献   
988.
利用激光干涉结晶方法,采用周期为400 nm的一维(1D)移相光栅掩模调制KrF准分子激光器的脉冲激光束斑的能量分布,在不同厚度的超薄氢化非晶硅(a-Si:H)膜内直接制备1D有序纳米硅(nc-Si)阵列.拉曼散射谱表明,样品上呈条状分布的受辐照区域发生晶化.原子力显微镜和透射电子显微镜测试结果表明:1D的nc-Si阵列的周期和移相光栅掩模一样.随着a-Si:H膜厚度从10nm降至4nm,通过控制激光的能量密度,每个周期中nc-Si条状分布区宽度可达到30nm.nc-Si条状分布区的高分辨电子显微镜照片显 关键词: 纳米硅 激光干涉结晶 移相光栅 定域晶化  相似文献   
989.
用DSC法研究苯乙烯-丙烯嵌段共聚物(iPS-b-iPP)的等温结晶动力学。结果表明,在所选择的结晶温度(127~132℃)范围内,共聚物很好地符合Avrami动力学方程;共聚物结晶温度、结晶速率、结晶成核和生长方式都与共聚物结构和组成比有关,随着嵌段共聚物中iPS段含量的增加,结晶速率和Avranu指数(n)明显降低。  相似文献   
990.
用核磁共振技术、紫外吸收光谱和硅钼酸反应等方法研究了反应体系中硅酸根离子和铝酸根离子的聚合态。发现反应产物的形态与硅酸根的聚合态有关,单态铝酸根离子与高聚硅酸根离子(聚合度>40)反应生成凝胶;单态铝酸根离子与单态或二聚态硅酸根离子反应生成沉淀。本文还研究了相同条件下的水热晶化行为,在沉淀区、混合区、凝胶区和溶胶区分别晶化得到沸石A、X、Y和P。  相似文献   
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