斜置平面天线阵的近场-远场方向图分析

从平面近场扫描数据处理原理和平面天线阵方向图理论出发,分析了相对于平面近场扫描平面斜置的平面天线阵方向图.基于斜置平面天线阵的空间结构关系,选择阵面旋转轴与阵面法线形成的平面为性能评估考察平面,发展了一种快速计算性能评估平面方向图的方法.得出该平面与平面近场扫描坐标系单位方向球相交曲线的轨迹参数方程.利用快速傅里叶变换技术,计算出斜置平面天线阵平面近场扫描空间方向图,在此基础上结合轨迹参数方程和二维插值方法解出对应该性能评估平面的方向图数据.数值仿真和实际应用结果表明该分析结论和方法的可靠性与实用性.     

铁铬合金团簇点阵中与成分相关的磁性耦合

本文采用气相团簇束流沉积法制备了不同铁铬比的铁铬合金密集团簇点阵,研究了团簇点阵中复杂的多相结构和各种耦合效应.当合金中铬含量较大时,在团簇中能够观测到一种晶格失配的类四方结构,这种结构的出现导致了不同铁铬比的合金团簇中交换偏置效应的不同.随着铬的含量增加,合金团簇的交换偏置场减小,而团簇间的偶极相互作用增强.在合金团簇的铁磁-超顺磁转变温度以上,能明显观察到在类四方结构团簇中有更大的残存矫顽力与剩磁.在场冷条件下,对矫顽力和偏置场随温度变化的研究表明含有更多类四方结构的合金团簇有更好的热稳定性和更大的各向异性.     

Generation of NOON States in Waveguide Arrays

A method to generate NOON states with three photons by injecting photons in an array of three waveguides is presented. Conditional measurements project the wave function in a given (desired) state. In passing, it is shown how the array of three waveguides, that effectively reproduces the interaction of three fields, may be reduced to the interaction of two fields.     

二极管激光器阵列封装工艺对smile效应影响因素分析

Smile效应是限制二极管激光器阵列应用的一个重要因素。研究了激光器封装工艺对smile效应的影响,研究结果表明,造成smile效应的因素主要有两个:一是焊接过程中芯片的焊接压力不均匀;二是芯片与热沉的热膨胀系数不匹配。使用低膨胀系数的压条可以改善焊接过程中芯片压力的均匀性,而增大焊料凝固过程中的降温速率可以降低芯片与热沉的收缩量的差距,这两种方法都有利于改善smile效应。最后通过实验结果证明了以上方法在实际操作中是可行有效的。     

折射型微透镜列阵的光刻热熔法研究

研究了制作折射型微透镜列阵的一种新方法光刻胶热熔成形法，获得了２０×２０的折射型微透镜列阵，单元微透镜相对口径为Ｆ／２，单元透镜直径为９０μｍ，中心间隔１００μｍ，透镜的波像差小于１．３波长。本文详细阐述了光刻热熔法的基本原理及微透镜设计方法，并讨论了工艺参数对微透镜列阵质量的影响。     

Reflective plasmonic waveplates based on metal–insulator–metal subwavelength rectangular annular arrays

We propose and present a quarter-wave plate using metal–insulator–metal (MIM) structure with sub-wavelength rectangular annular arrays (RAA) patterned in the upper Au film. It is found that by manipulating asymmetric width of the annular gaps along two orthogonal directions, the reflected amplitude and phase of the two orthogonal components can be well controlled via the RAA metasurface tuned by the MIM cavity effect, in which the localized surface plasmon resonance dip can be flattened with the cavity length. A quarter-wave plate has been realized through an optimized design at 1.55 μm, in which the phase difference variation of less than 2% of the π/2 between the two orthogonal components can be obtained in an ultra-wide wavelength range of about 130 nm, and the reflectivity is up to ∼90% within the whole working wavelength band. It provides a great potential for applications in advanced nanophotonic devices and integrated photonic systems.     

Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy

The self-catalyzed growth of Ga As nanowires(NWs) on silicon(Si) is an effective way to achieve integration between group III–V elements and Si. High-crystallinity uniform Ga As NW arrays were grown by solid-source molecular beam epitaxy(MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of Ga As NW arrays was investigated and is discussed in detail. The Ga As NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform III–V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.     

矩底拱面状微透镜阵列的氩离子束刻蚀

在ＺｒＯ２、ＩｎＰ、Ｓｉ及ＳｉＯ２即融凝石英衬底上用氩离子束刻蚀制作面阵矩底拱面状微透镜阵列，给出了氩离子束在不同的入射角度下刻蚀器件的速率与离子束能量之间的关系。实验表明，用国产ＢＰ２１２紫外正型光刻胶制作的光致抗蚀剂掩膜图形在经过优化的工艺条件下可以通过氩离子束刻蚀将预定图形转移到衬底材料中。     

On two--block--factor sequences and one--dependence

The distributions of two--block--factors arising from i.i.d. sequences are observed to coincide with the distributions of the superdiagonals of jointly exchangeable and dissociated arrays . An inequality for superdiagonal probabilities of the arrays is presented. It provides, together with the observation, a simple proof of the fact that a special one--dependent Markov sequence of Aaronson, Gilat and Keane (1992) is not a two--block factor.