空气呼吸模式CO2激光等离子体光谱观察

为了了解采用脉冲CO₂激光推进空气呼吸模式时光船参数等对产生等离子体的影响，介绍了利用实验室自行研制的紫外预电离TEA CO₂激光器进行的激光等离子体实验。实验采用底面直径为60mm、焦距为5mm和10mm的抛物面光船。介绍了空气呼吸模式激光等离子体的谱和明显的特征谱线，以及等离子体的时间演化过程。结果表明：空气呼吸模式等离子体的持续时间约为20μs，在6μs左右时信号强度达到最大值；激光脉冲作用后，信号迅速衰减；10mm光船产生的等离子体信号峰值和持续时间均略长于5mm光船的。     

LD泵浦腔外倍频高转换效率Nd3+∶GdVO4固体激光器

通过合理设计精密调控各元件和温控电流，得到了平均功率为70 mW，脉冲宽度为22 ns，重复频率为14 kHz，峰值功率高达230 W的Nd3+∶GdVO4/Cr4+YAG红外脉冲激光器.先采用双凸透镜组合成的望远镜系统对1 063 nm的红外激光进行扩束，再对该光束聚焦，最后经双轴晶体LBO倍频后，得到了平均功率为40.6 mW，脉冲宽度为16 ns，重复频率为14 kHz，峰值功率高达181 W的绿光激光输出，1063 nm→532 nm的转换效率高达58%.测量了532 nm的光谱线宽曲线.解释了该聚焦方法比单一薄透镜效果明显好的原因，并指出了这种聚焦方法的使用对象.     

利用单模激光Lorenz系统实现混沌反控制

利用Lyapunov函数方法，对混沌反控制问题进行了研究.以单模激光Lorenz系统和描述心脏搏动的Bonhoeffer-Van der Pol系统为例，设计了一种控制器，成功地使Bonhoeffer-Van der Pol系统混沌化.给出了控制器的具体设计方案以及单模激光Lorenz系统与Bonhoeffer-Van der Pol系统状态之间误差系统的结构.仿真结果表明，在控制器的作用下，Bonhoeffer-Van der Pol系统所有状态变量严格地跟踪了单模激光Lorenz系统的混沌轨迹，对应的相空间中Bonhoeffer-Van der Pol系统的轨迹也由极限环转变为与单模激光Lorenz系统的轨迹完全相同的混沌吸引子，Bonhoeffer-Van der Pol系统严格地跟踪了单模激光Lorenz系统混沌的动态行为.     

大气激光通信的实验测量

设计了大气激光通信信道测量系统，利用此系统在不同气象条件下进行了近地视距实验测量并采集了不同天气条件下的实验数据，详细分析讨论了所得实验数据并进行了误差分析．同时实验中获得了大量数据，为进一步完善大气激光信道模型提供了有力的依据．     

利用射线追踪法研究超短外腔半导体激光器的输出特性

基于射线追踪法，推导了外腔半导体激光器的连续输出谱的隐函表达式.在此基础上，结合载流子速率方程，对超短外腔半导体激光器的输出谱及P-I特性进行了研究.结果表明：当外腔长度发生波长量级的变化时，超短外腔激光器的P-I特性将发生显著变化；随着外腔长度的变化，超短外腔激光器的激射波长在10nm范围内呈周期性跳变，当外腔长度介于40μm—70μm范围内，激射波长跳变范围最大.理论模拟结果与实验报道结果符合.     

射频CO2激光用于轧辊毛化的实验研究

分析了轧辊材料在温度发生变化时对激光吸收系数的影响和毛化加工时各种工艺参数对毛化点的影响.针对Diamond K-50射频激励CO2激光器对轧辊毛化的实验,分析了激光脉冲宽度、重复频率以及毛化扫描速度等参数对毛化点的大小和椭圆度的影响,其中激光脉冲宽度与毛化点大小成线性关系,在脉宽为50～400μs时,毛化点椭圆短轴直径可达90～260μm,满足所需要的毛化加工要求.     

Photoacoustic monitoring of the mass removed in pulsed laser ablation

The mass Δm removed per pulse in laser ablation was shown to correlate with the acoustic signal A and the beam diameter ?. The functional forms of Δm(A, ?) were deduced for aluminum and polyvinyl chloride, for fluence ranging from 1.5 through 88 J cm^{− 2}. Δm so computed agreed with empirical values within experimental error. For samples whose mass is sensitive to environmental factors, off-line measurement of Δm was shown to be unreliable and real-time measurements such as acoustic monitoring became essential.     

Synthesis and structure‐activity relationship of several aromatic ketone‐based two‐photon initiators

Several novel aromatic ketone‐based two‐photon initiators containing triple bonds and dialkylamino groups were synthesized and the structure‐activity relationships were evaluated. Branched alkyl chains were used at the terminal donor groups to improve the solubility in the multifunctional monomers. Because of the long conjugation length and good coplanarity, the evaluated initiators showed large two‐photon cross section values, while their fluorescence lifetimes and quantum yields strongly depend on the solvent polarity. All novel initiators exhibited high activity in terms of two‐photon‐induced microfabrication. This is especially true for fluorenone‐based derivatives, which displayed much broader processing windows than well‐known highly active initiators from the literature and commercially available initiators. While the new photoinitiators gave high reactivity in two‐photon‐induced photopolymerization at concentration as low as 0.1% wt, these compounds are surprisingly stable under one photon condition and nearly no photo initiation activity was found in classical photo DSC experiment. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

A comparison of algainas and InGaAsP-based 1.3 μm semiconductor lasers using high pressure

Abstract

We have compared the effect of hydrostatic pressure on the threshold current, I_th, and lasing energy, E_lase, of 1.3 pm quantum-well devices based upon AlGaInAs and InGaAsP. Whilst we observe a very similar dependence of E_lase on pressure for the two materials, we measure strikingly different variations of I_th. By applying pressure to 1.3 μm InGaAsP lasers, I_th typically decreases by ～ 10% over 1 GPa consistent with the reduction of Auger recombination, which forms ～ 50% of I_th at room temperature. However, for the 1.3 μm AlGaInAs-based lasers, we observe an increase in I_th by ～ 8% over the same pressure range. From these results we conclude that non-radiative recombination accounts for only ～ 20% of I_th in AlGaInAs-based devices. This is in good agreement with previous temperature dependence measurements and shows why AlGaInAs-based devices exhibit a reduced temperature sensitivity of I_th which is very important for telecommunications applications.