首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   11354篇
  免费   3786篇
  国内免费   809篇
化学   2581篇
晶体学   197篇
力学   563篇
综合类   53篇
数学   85篇
物理学   12470篇
  2024年   13篇
  2023年   50篇
  2022年   199篇
  2021年   214篇
  2020年   221篇
  2019年   176篇
  2018年   222篇
  2017年   362篇
  2016年   447篇
  2015年   385篇
  2014年   674篇
  2013年   730篇
  2012年   778篇
  2011年   1001篇
  2010年   647篇
  2009年   787篇
  2008年   887篇
  2007年   978篇
  2006年   846篇
  2005年   682篇
  2004年   705篇
  2003年   576篇
  2002年   585篇
  2001年   494篇
  2000年   504篇
  1999年   460篇
  1998年   363篇
  1997年   320篇
  1996年   291篇
  1995年   243篇
  1994年   202篇
  1993年   164篇
  1992年   165篇
  1991年   127篇
  1990年   103篇
  1989年   79篇
  1988年   54篇
  1987年   59篇
  1986年   32篇
  1985年   21篇
  1984年   25篇
  1983年   8篇
  1982年   12篇
  1981年   19篇
  1980年   11篇
  1979年   4篇
  1974年   3篇
  1973年   11篇
  1971年   2篇
  1957年   2篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
911.
设计了大气激光通信信道测量系统,利用此系统在不同气象条件下进行了近地视距实验测量并采集了不同天气条件下的实验数据,详细分析讨论了所得实验数据并进行了误差分析.同时实验中获得了大量数据,为进一步完善大气激光信道模型提供了有力的依据.  相似文献   
912.
吴加贵  吴正茂  夏光琼 《物理学报》2007,56(11):6457-6462
基于射线追踪法,推导了外腔半导体激光器的连续输出谱的隐函表达式.在此基础上,结合载流子速率方程,对超短外腔半导体激光器的输出谱及P-I特性进行了研究.结果表明:当外腔长度发生波长量级的变化时,超短外腔激光器的P-I特性将发生显著变化;随着外腔长度的变化,超短外腔激光器的激射波长在10nm范围内呈周期性跳变,当外腔长度介于40μm—70μm范围内,激射波长跳变范围最大.理论模拟结果与实验报道结果符合.  相似文献   
913.
射频CO2激光用于轧辊毛化的实验研究   总被引:1,自引:0,他引:1  
分析了轧辊材料在温度发生变化时对激光吸收系数的影响和毛化加工时各种工艺参数对毛化点的影响.针对Diamond K-50射频激励CO2激光器对轧辊毛化的实验,分析了激光脉冲宽度、重复频率以及毛化扫描速度等参数对毛化点的大小和椭圆度的影响,其中激光脉冲宽度与毛化点大小成线性关系,在脉宽为50~400μs时,毛化点椭圆短轴直径可达90~260μm,满足所需要的毛化加工要求.  相似文献   
914.
Photoacoustic monitoring of the mass removed in pulsed laser ablation   总被引:1,自引:0,他引:1  
The mass Δm removed per pulse in laser ablation was shown to correlate with the acoustic signal A and the beam diameter ?. The functional forms of Δm(A, ?) were deduced for aluminum and polyvinyl chloride, for fluence ranging from 1.5 through 88 J cm− 2. Δm so computed agreed with empirical values within experimental error. For samples whose mass is sensitive to environmental factors, off-line measurement of Δm was shown to be unreliable and real-time measurements such as acoustic monitoring became essential.  相似文献   
915.
Several novel aromatic ketone‐based two‐photon initiators containing triple bonds and dialkylamino groups were synthesized and the structure‐activity relationships were evaluated. Branched alkyl chains were used at the terminal donor groups to improve the solubility in the multifunctional monomers. Because of the long conjugation length and good coplanarity, the evaluated initiators showed large two‐photon cross section values, while their fluorescence lifetimes and quantum yields strongly depend on the solvent polarity. All novel initiators exhibited high activity in terms of two‐photon‐induced microfabrication. This is especially true for fluorenone‐based derivatives, which displayed much broader processing windows than well‐known highly active initiators from the literature and commercially available initiators. While the new photoinitiators gave high reactivity in two‐photon‐induced photopolymerization at concentration as low as 0.1% wt, these compounds are surprisingly stable under one photon condition and nearly no photo initiation activity was found in classical photo DSC experiment. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011  相似文献   
916.
917.
Abstract

We have compared the effect of hydrostatic pressure on the threshold current, Ith, and lasing energy, Elase, of 1.3 pm quantum-well devices based upon AlGaInAs and InGaAsP. Whilst we observe a very similar dependence of Elase on pressure for the two materials, we measure strikingly different variations of Ith. By applying pressure to 1.3 μm InGaAsP lasers, Ith typically decreases by ~ 10% over 1 GPa consistent with the reduction of Auger recombination, which forms ~ 50% of Ith at room temperature. However, for the 1.3 μm AlGaInAs-based lasers, we observe an increase in Ith by ~ 8% over the same pressure range. From these results we conclude that non-radiative recombination accounts for only ~ 20% of Ith in AlGaInAs-based devices. This is in good agreement with previous temperature dependence measurements and shows why AlGaInAs-based devices exhibit a reduced temperature sensitivity of Ith which is very important for telecommunications applications.  相似文献   
918.
吴逢铁  张文珍 《光子学报》2000,29(4):308-311
本文描述我们设计的带抗共振环 (ARR)的对撞脉冲锁模 (CPM )非稳腔Nd :YAP和Nd :YAG激光器 ,该激光腔结合了CPM腔脉宽窄、工作稳定和非稳腔输出能量高的特点 ,是一理想的高功率激光器 同时选择了KTP、BBO和LBO等优良非线性晶体作为腔内倍频元件 ,实现高效倍频转换 获得× 1 0mJ和 5GW /cm2 的高能量和高功率绿光皮秒脉冲输出 ,倍频转换效率高达 ( 50~ 70 ) %  相似文献   
919.
郗迈 《大学物理》1999,18(5):26-28,34
运用光反馈的原理和技术演示并验证激光功率表达式,说明激光介质和光学谐振腔的性质和作用。  相似文献   
920.
A continuous cyclic voltammetric study of methyldopa at gold micro electrode was carried out. The drug in phosphate buffer (pH 2.0) is adsorpted at 400 mV, giving rise to change in the current of well-defined oxidation peak of gold in the flow injection system. The proposed detection method has some of advantages, the greatest one of which are as follows: first, it is no more necessary to remove oxygen from the analyte solution and second, this is a very fast and appropriate technique for determination of the drug compound in a wide variety of chromatographic analysis methods. Signal-to-noise ratio has significantly increased by application of discrete Fast Fourier transform (FFT) method, background subtraction and two-dimensional integration of the electrode response over a selected potential range and time window. Also in this work some parameters such as sweep rate, eluent pH, and accumulation time and potential were optimized. The linear concentration range was of 1.0×10-7—1.0×10-11 mol•L-1 (r=0.9975) with a limit of detection and quantitation 0.004 nmol•L-1 and 0.03 nmol•L-1, respectively. The method has the requisite accuracy, sensitivity, precision and selectivity to assay methyldopa in tablets. The influences of pH of eluent, accumulation potential, sweep rate, and accumulation time on the determination of the methyldopa were considered.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号