ZnSe-ZnS多层量子阱光学双稳态器件

本文报道了以YAG三倍频激光为光源时,在用MBE生长的ZnSe-ZnS多量子阱材料制成的F—P标准具光双稳器件上观察到的脉冲压缩效应。根据入射脉冲波形和透射脉冲波形得到了该器件的双稳回线。     

毫米波圆柱波导自由电子激光放大器的数值模拟

本文以单粒子理论为基础，在不计空间电荷效应的近似条件下推导了带轴向引导磁场的三维圆柱波导非线性模拟方程组。用CAGFEL程序计算、分析了在带入口区、常数摇摆器条件下两组不同物理参数的自由电子激光放大器的物理模型。计算结果可靠，物理图象合理。对于其中的第二组参数还着重考查了光波频率、输入功率和摇摆器场振幅改变对输出功率和效率的影响。上述这些计算结果对0．7MeV 自由电子激光放大器的设计和实验具有一定的参考价值。     

喇曼型无引导场自由电子激光实验

EPA-74脉冲线加速器二极管改用凹面聚焦阴极产生束流,从有栅网阳极孔引出后,通过磁透镜将束流注进长1.5m,周期长3.45cm的双绕螺旋摇摆器中,摇摆器磁场为1.25kGs时,进入摇摆器均匀区的束流为280A,传输到均匀区末端束流130A。实验得到130dB/m的增长率和辐射输出饱和现象,饱和功率7.6MW,效率5％。由波导色散线和微波量热计分别测得辐射频率为37GHz和辐射能量48mJ。辐射波模为TE_(11)圆波模。     

激光辐照环境对金属材料反射特性的影响

 利用积分球绝对测量法,对在20 Pa真空缺氧、1 000 Pa空气,10⁵ Pa空气及1 000 Pa氧气环境下,1 064 nm波长连续激光辐照30CrMnSiA碳钢材料过程中的反射光信号进行了测量,得到了30CrMnSiA碳钢在4种辐照环境下的反射率和温度变化曲线。结果表明：在空气组分辐照环境的低压到10⁵ Pa范围内,材料初始反射率随压力增大而增大;在缺氧和富氧环境的激光辐照过程中,缺氧环境下材料反射率变化缓慢,且变化拐点温度高于富氧环境,富氧环境下材料被加热后的快速氧化反应有利于材料对激光能量的吸收;不同辐照环境（缺氧和富氧）相同材料温度条件下,材料反射率并不相同。     

ArF laser surface modification of polyethersulfone film: Effect of laser fluence in improving surface biocompatibility

ArF laser treatment of polyethersulfone (PES) films was performed to improve biocompatibility of surfaces. For this purpose, the threshold fluence for laser ablation of PES was obtained from experimental measurements and then samples were irradiated at 2 separate ranges of fluences, i.e. below and above the ablation threshold. In order to investigate the physico-chemical changes, the modified surfaces were characterized by attenuated total reflectance (ATR) infrared spectroscopy and contact-angle measurements. The biocompatibility of the treated samples in comparison to those untreated was examined in vitro using a platelet adhesion test. The number of adhered platelets was obtained using the lactate dehydrogenase (LDH) method. For surfaces irradiated below the ablation threshold, a high reduction in the number of the adhered platelets was observed; while this number increased in samples treated at the fluence above the ablation threshold. The change in platelet adhesion was attributed to the change in chemistry and roughness of the irradiated surfaces.     

Characterization of ZnO-SnO2 thin film composites prepared by pulsed laser deposition

Thin films of ZnO-SnO₂ composites have been deposited on Si(1 0 0) and glass substrates at 500 °C by pulsed laser ablation using different composite targets with ZnO amount varying between 1 and 50 wt%. The effect of increasing ZnO-content on electrical, optical and structural properties of the ZnO-SnO₂ films has been investigated. X-ray diffraction analysis indicates that the as-deposited ZnO-SnO₂ films can be both crystalline (for ZnO <1 wt%) and amorphous (for ZnO ≥ 10 wt%) in nature. Atomic force microscopy studies of the as-prepared composite films indicate that the surfaces are fairly smooth with rms roughness varying between 3.07 and 2.04 nm. The average optical transmittance of the as-deposited films in the visible range (400-800 nm), decreases from 90% to 72% for increasing ZnO concentration in the film. The band gap energy (E_g) seems to depend on the amount of ZnO addition, with the maximum obtained at 1 wt% ZnO. Assuming that the interband electron transition is direct, the optical band gap has been found to be in the range 3.24-3.69 eV for as-deposited composite films. The lowest electrical resistivity of 7.6 × 10⁻³ Ω cm has been achieved with the 25 wt% ZnO composite film deposited at 500 °C. The photoluminescence spectrum of the composite films shows a decrease in PL intensity with increasing ZnO concentration.     

Surface morphologic and structural analysis of IR irradiated silver

The microstructural morphological changes in laser irradiated targets are investigated. Nd:YAG laser (1064 nm, ∼12 ns nominal, 1.1 MW) is used to irradiate 4 N pure (99.99%) fine polished and annealed silver samples in ambient air and under vacuum ∼10⁻⁶ Torr. The laser spot size and power density at tight focus are 12 μm and 3×10¹¹ W/cm², respectively. SEM micrographs and X-ray diffractograms of the exposed and unexposed targets reveal the surface texture and structural changes, respectively. Amongst the ablation mechanisms involved, exfoliation and hydrodynamic sputtering are found to be dominant. Surface modifications appear in the form of craters and ripples formation. Heat is conducted non-uniformly through narrow channels at the surface. Thermal stresses induced by the laser do not disturb inter planar distance of the target. On the other hand irradiation causes significant variations in grain size and diffracted X-rays intensities.     

基于GaSe和GaSe_(0.7)S_(0.3)单晶的单脉冲CO_2激光倍频器(英文)

描述了使用电感储能发生器和半导体转换开关泵浦的工作波长为10.6μm的高效CO2激光器。给出了激光泵浦的非线性晶体GaSe和GaSe0.7S0.3的二次谐波振荡的实验数据和理论估算结果。结果显示,GaSe晶体在输入能量为180mJ时,最大能量转换效率为0.38%,倍频激光的峰值功率为8 kW。     

Crystallization and grain growth characteristics of yttria-stabilized zirconia thin films grown by pulsed laser deposition

Knowledge about the crystallization and grain growth characteristics of metal oxide thin films is essential for effective microstructural engineering by thermal post-annealing and the integration to Si-based miniaturized electroceramic devices. Finite size and interface effects may cause fundamentally different behavior compared to three dimensional macroscopic systems. This work presents a comprehensive investigation of the crystallization kinetics and microstructural evolution upon thermal post-annealing of amorphous 200 nm and 1.2 μm thin films of 8 mol% yttria-stabilized zirconia grown by pulsed laser deposition (PLD) using ex- and in-situ X-ray diffraction, Raman spectroscopy, and electron microscopy techniques. The layers exhibit a remarkably low crystallization temperature of 200-250 °C while exposure to energetic electrons induces the formation of randomly dispersed ~ 20 nm sized crystallites already at ambient temperature. The isothermal amorphous to crystalline phase transformation kinetics can be described quantitatively by the Johnson-Mehl-Avrami-Kolmogorov model. They reveal characteristics of a three dimensional growth under cation bulk diffusion control with heterogeneous nucleation that changes from continuous to instantaneous initial seeding at temperatures above 300 °C. Large (> 100 nm) equiaxed grains are formed rapidly without a stabilization of transient nanocrystals during the thermally induced phase transformation. A stagnation of normal grain growth resulting in a logarithmic normal size distribution is observed once the average grain dimensions approach the film thickness. The results on the crystallization and grain growth of the PLD-grown YSZ films are evaluated with regards to the fabrication of YSZ solid electrolyte membranes for Si-supported micro solid oxide fuel cells and gas sensors.     

Effects of phase explosion in pulsed laser deposition of nickel thin film and sub-micron droplets

Nickel (Ni) thin films were deposited on glass substrates in high vacuum and at room temperature with third-harmonic or 355-nm output from a nanosecond Nd:YAG laser. At low laser fluence of 1 J/cm², the deposition rate was about 0.0016 nm/shot which increased linearly until 4 J/cm². Above 4 J/cm², the onset of phase explosion in the ablation abruptly increased the optical emission intensity from laser-produced Ni plume as well as thin-film deposition rate by about 6×. The phase explosion also shifted the size distribution and number density of Ni droplets on its thin-film surface. On the other hand, the surface structures of the ablated Ni targets were compared between the scan-mode and the fixed-mode ablations, which may suggest that droplets observed on the thin-film surface were caused by direct laser-induced splashing of molten Ni rather than vapour-to-cluster condensation during the plume propagation.