LD侧面抽运板条激光器热效应分析

针对板状Nd:YLF激光介质,在高斯光束抽运情况下,用ANSYS有限元软件模拟了激光介质的热效应,对激光介质中各点的温度和应力分布进行了分析和比较.研究发现双侧抽运与单侧抽运相比,更易获得对称的温度分布,随着抽运光斑横截面变大,抽运面中心温度变低.同时得到板条的棱边、端角处存在较大热应力,且引入的机械应力不可忽视,因此,激光器运转时此区域需防止断裂.     

调谐半导体激光吸收光谱自平衡检测方法研究

可调谐半导体激光吸收光谱技术(TDLAS)是利用半导体激光器的波长调谐特性,扫描待测气体特征吸收线,从而获得待测气体的浓度信息。基于可调谐半导体激光吸收光谱的自平衡检测方法能够有效地消除激光器光强波动等共模噪声和其他同性干扰的影响。实验表明自平衡检测方法可以获得较理想的结果,检测限低于体积比1.2×10-6,与直接吸收光谱法相比降低了一个数量级。自平衡检测电路简单,自带的电子增益补偿机制能够自动进行平衡探测,该方法不用加信号调制和锁相放大器,直接探测待测气体的吸收光谱,从而降低成本,减小系统装置体积,易于集成为便携式痕量气体检测仪。     

用于脉冲γ强度测量的Ф60,1000μmPIN探测器

采用电阻率为10000—20000Ω.cm的高阻单晶硅材料,研制成功灵敏区尺寸为60mm,耗尽层厚度~1000μm的大面积厚PIN半导体探测器.设计了该类探测器厚度测量专用的反冲质子测量系统,对探测器的时间响应、γ灵敏度、漏电流、γ/n分辨等物理参数进行了测量和分析,结果表明,这类探测器可满足低强度裂变n/γ混合场中脉冲γ强度测量的需要.     

弱湍流大气激光通信中的光强闪烁研究

大气激光通信中，湍流引起的光强闪烁严重影响通信系统的性能指标（误码率）。通过对湍流条件下光强分布的数值仿真，得出弱湍流时接收光强服从对数正态分布，与Rytov理论一致。用随机过程分析的方法给出了系统误码率与光强闪烁的关系，并进行MATLAB数值模拟。研究表明误码率随对数振幅方差（湍流强度）的增加而上升，且当对数振幅方差在0～0．02时，误码率随对数振幅方差的变化较快，近似呈线性递增。在工程中，可采用自适应光学或多发射机等技术抑制湍流对大气激光通信的影响。     

激光主动探测中回波信号的小波去噪方法

在分析激光主动探测中回波信号的噪声特性和小波变换去噪原理的基础上，提出了一种基于最大信噪比准则的小渡阈值去噪方法。首先用最大信噪比准则对小波变换系数进行阈值选取，然后采用软阂值方法对小波系数进行量化处理后再重构。仿真结果表明最大信噪比准则小波去噪方法改善信噪比效果十分显著，检测下限达到-16．2dB。证明了该方法在激光主动探测系统回波信号检测中的有效性。     

The Analysis of Scattering Effect for the Transmission of 1.06?μm Laser In Lower Altitude Atmosphere

On the basis of Mie’s scattering theory, the light scattering properties of atmospheric molecules and aerosol particles are analyzed and a forward-scattering model for atmospheric transmission in city outskirts is built. Through theoretical analysis and the numerical calculations to the irradiance distribution of the 1.06 μm pulse laser while transmitting in lower altitude atmosphere, we can draw some conclusions which provide usable information for the research and manufacture of off-axis scattering warning systems.     

Two-period model for calculation of level populations in subbands of multi-period quantum-cascade superlattice structures

For two periods of quantum-cascade laser structures, we propose a system of closed balance equations that make it possible to calculate the occupancy of the energy levels, the quasi-Fermi levels, and also the injection current density taking into account different charge carrier scattering mechanisms. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 6, pp. 801–804, November–December, 2007.     

Combination of two basic types of synchronization in a coupled semiconductor laser system

Combination of two basic types of synchronization, anticipatory synchronization and lagged synchronization, is investigated numerically between two coupled semiconductor lasers. It is found that lagged synchronization produced by a backward coupling with a suitable delay can combine with the originally hidden anticipatory synchronization and produce a type of synchronization overcoming the original lagged synchronization produced by a forward coupling. We study the combination synchronization phenomenon when the delay of the backward coupling is different from that of the original anticipatory synchronization. Our results suggest that the synchronization combination phenomenon might allow an interpretation of an experimental observation by Sivaprakasam et al. [Phys. Rev. Lett. 87, 154101 (2001)] that the anticipating time is irrespective of the external-cavity round trip time, which to date remains to be understood.     

Parallel Plate Interferometer with a Reflecting Mirror for Measuring Angular Displacement

A parallel plate interferometer with a reflecting mirror for measuring angular displacement is proposed. A deflection angle of a beam caused by an angular displacement is amplified by use of a reflecting mirror to increase the optical path difference (OPD) in the plane-parallel plate, which provides high sensitivity of the phase measurement. Detection of light transmitted through the plane-parallel plate with a position sensitive detector (PSD) enables high accurate measurement of the initial angle of incidence to the plane-parallel plate with insensitivity to stray light. The improved parallel plate interferometer achieves a measurement repeatability of 10⁻⁸ rad.     

Silicon detector technology development in India for the participation in international experiments

A specific research and development program has been carried out by BARC in India to develop the technology for large area silicon strip detectors for application in nuclear and high energy physics experiments. These strip detectors will be used as pre-shower detector in the CMS experiment at LHC, CERN for π ⁰/λ rejection. The fabrication technology to produce silicon strip detectors with very good uniformity over a large area of ∼40 cm², low leakage currents of the order of 10 nA/cm² per strip and high breakdown voltage of >500 V has been developed by BARC. The production of detectors is already under way to deliver 1000 detector modules for the CMS and 90% production is completed. In this paper, research and development work carried out to develop the detector fabrication technology is briefly described. The performance of the silicon strip detectors produced in India is presented. The present status of the detector technology is discussed.