Impact of delays and rewiring on the dynamics of small-world neuronal networks with two types of coupling

We study synchronization transitions and pattern formation on small-world networks consisting of Morris-Lecar excitable neurons in dependence on the information transmission delay and the rewiring probability. In addition, networks formed via gap junctional connections and coupling via chemical synapses are considered separately. For gap-junctionally coupled networks we show that short delays can induce zigzag fronts of excitations, whereas long delays can further detriment synchronization due to a dynamic clustering anti-phase synchronization transition. For the synaptically coupled networks, on the other hand, we find that the clustering anti-phase synchronization can appear as a direct consequence of the prolongation of information transmission delay, without being accompanied by zigzag excitatory fronts. Irrespective of the coupling type, however, we show that an appropriate small-world topology can always restore synchronized activity if only the information transmission delays are short or moderate at most. Long information transmission delays always evoke anti-phase synchronization and clustering, in which case the fine-tuning of the network topology fails to restore the synchronization of neuronal activity.     

Smooth and discontinuous junctions in the p-system

Consider the p-system describing the subsonic flow of a fluid in a pipe with section a=a(x). We prove that the resulting Cauchy problem generates a Lipschitz semigroup, provided the total variation of the initial datum and the oscillation of a are small. An explicit estimate on the bound of the total variation of a is provided, showing that at lower fluid speeds, higher total variations of a are acceptable. An example shows that the bound on TV(a) is mandatory, for otherwise the total variation of the solution may grow arbitrarily.     

Charge transport through ferromagnet/two-dimensional electron gas/d-wave superconductor junctions with Rashba spin-orbit coupling

Along the lines of Blonder, Tinkham and Klapwijk, we investigate the charge transport through ferromagnet/two-dimensional electronic gas/d-wave superconductor (F/2DEG/S) junctions in the presence of Rashba spin-orbit (SO) coupling and focus our attention on the interplay between spin polarization and spin precession. At zero spin polarization, the spin-mixing scattering resulted from Rashba SO coupling decreases the zero-bias conductance peak. Under spin polarization, spin precession introduces novel Andreev reflection, which competes with the effect of spin-mixing scattering. If the F layer is a half metal, the later effect is overwhelmed by that of novel Andreev reflection. As a result, the zero-bias conductance dip caused by spin polarization is enhanced, and at strong Rashba SO coupling, a split zero-bias peak is found in the gap. In an intermediate region where the two effects are comparable with each other, the zero-bias conductance shows a reentrant behavior as a function of Rashba SO coupling.     

Analysis of silicon light emission under breakdown condition using an indirect intraband model

The light emission from silicon (npn) emitter–base junctions under breakdown condition has been modelled. The model suggests an indirect intraband processes combined with self-absorption. Good agreement between simulated and measured electroluminescence (EL) spectra is shown which demonstrates that the model is simple and more consistent with fundamental physical device characteristics particularly in the spectral range studied (1.4–2 eV).     

Interface effects in spin-polarized metal/insulator layered structures

Recent advances in thin-film deposition techniques, such as molecular beam epitaxy and pulsed laser deposition, have allowed for the manufacture of heterostructures with nearly atomically abrupt interfaces. Although the bulk properties of the individual heterostructure components may be well-known, often the heterostructures exhibit novel and sometimes unexpected properties due to interface effects. At heterostructure interfaces, lattice structure, stoichiometry, interface electronic structure (bonding, interface states, etc.), and symmetry all conspire to produce behavior different from the bulk constituents. This review discusses why knowledge of the electronic structure and composition at the interfaces is pivotal to the understanding of the properties of heterostructures, particularly the (spin polarized) electronic transport in (magnetic) tunnel junctions.     

Quantum‐Transport Characteristics of a p–n Junction on Single‐Layer TiS3

By using density functional theory and non‐equilibrium Green′s function‐based methods, we investigated the electronic and transport properties of a TiS₃ monolayer p–n junction. We constructed a lateral p–n junction on a TiS₃ monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS₃ p–n junction. In addition, the spin‐dependent current–voltage characteristics of the constructed TiS₃ p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin‐polarized currents in the TiS₃ p–n junction. These prominent conduction properties of the TiS₃ p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single‐layered material.     

Nonlinear resonance between a soliton and Josephson plasma waves: experiment and theory

Resonant interaction of a soliton (Josephson fluxon) with its self-generated Josephson plasma waves is studied experimentally, numerically, and analytically. An externally applied magnetic field H forms a cos-like potential relief for the soliton in the annular junction. Soliton motion under the influence of the bias current leads to an emission of plasma waves, which gives rise to a resonance at a certain soliton velocity. This resonance on the current–voltage characteristics shows a clear backbending accompanied by a negative differential resistance. Our analysis quantitatively explains the observed effect.     

Dynamic singular perturbation problems for multi‐structures

This paper contains an overview of recent development in asymptotic analysis of fields in multi‐structures. We begin with simple examples of scalar dynamic problems in two dimensions, and then present analysis of time‐dependent fields in 1D–3D multi‐structures. The asymptotic results, presented here, are based on the method of compound asymptotic expansions. Copyright © 2000 John Wiley & Sons, Ltd.