Bound-State Solutions of the Klein-Gordon Equation for the Generalized <Emphasis Type="Italic">PT</Emphasis>-Symmetric Hulthén Potential

The one-dimensional Klein-Gordon equation is solved for the PT-symmetric generalized Hulthén potential in the scalar coupling scheme. The relativistic bound-state energy spectrum and the corresponding wave functions are obtained by using the Nikiforov-Uvarov method which is based on solving the second-order linear differential equations by reduction to a generalized equation of hypergeometric type. PACS numbers: 03.65.Fd, 03.65.Ge     

Raising and Lowering of Generalized Hulthén Potential from Supersymmetry Approaches

We obtain the exact bound states of the generalized of Hulthén potential with negative energy levels using an analytic approach. In order to obtain bound states, we use the associated Jacobi differential equation. Using the supersymmetry approach to quantum mechanics, we show that these bound states, via four pairs of first order differential operators, represent four types of ladder equations. Two types of these supersymmetric structures suggest derivation of algebric solutions for the bound states using two different approaches. PACS 21.60.Cs; 21.60.Fw; 21.60.-n; 03.65.Fd; 03.65.Ge; 03.65.-w     

三维各向同性谐振子波函数的递推关系(英文)

本文应用拉普拉斯变换得到了三维各向同性谐振子波函数边界的精确解,同时,利用同种方法还得到了利用产生算符和湮灭算符表达的该波函数的递推关系.     

色散耦合道光学模型对28Si的核子散射数据分析

在光学势中引入色散关系, 相比于通常的耦合道光学模型, 极大地减少了光学势 参数的个数. 采用基于软旋转子模型的耦合道方法对较轻形变核²⁸Si核的中子和质子散射实验数据进行了计算分析, 拟合得到一组色散光学势参数. 计算的中子总截面、以及中子、质子的弹性与非弹性散射微分截面与实验数据有较好的符合.     

7Li2分子23Πu激发态的解析势能函数、振动能级及其转动惯量

使用Gaussian03程序包中的“对称性匹配簇-组态相互作用”方法、在0.13—2.0nm的核间距范围内利用6-311 G(d,p)基组对7Li2(23Πu)分子的势能曲线进行了计算,同时使用最小二乘法将计算结果拟合成了解析势能函数.利用拟合出的解析势能函数并结合Rydberg-Klein-Rees方法,计算了该态的谐振频率,进而计算了该态的其他光谱常数,分别为Te=3.6701eV,De=1.0764eV,Re=0.3000nm,ωe=285.69cm-1,ωeχe=1.8351cm-1,αe=0.00942cm-1和Be=0.5340cm-1,其中光谱常数Te,De,Re和ωe的值与文献值相符很好.以得到的解析势能函数为基础,通过求解双原子分子核运动的径向Schr dinger方程,发现J=0时7Li2(23Πu)分子存在67个振动态,求出了相应于每一振动态的振动能级、振动经典转折点及转动惯量.     

Characterization of SiC and Si<Subscript>3</Subscript>N<Subscript>4</Subscript> nanoparticles and their aqueous dispersions

Nanoparticles of SiC and Si₃N₄ were previously used to obtain electroless NiP/particles nanocomposites. The incorporation process was very different, depending on the particle: SiC tended to agglomerate and had a high incorporation level; Si₃N₄ particles were not aggregated, but their incorporation level was very low. To try to explain these differences, the particles and their aqueous dispersions were characterized. Although the as-received products were both oxidized and of the identical mean size, results showed that the size distributions and the surface oxidation products were rather different. The zeta potential in water dispersions was similar and negative for both particles but, as the electrolyte ions were introduced, it showed a different evolution: nitride particles retained a small negative charge and carbide was almost uncharged. The overall results obtained in this study explain the different behavior of both ceramic particles and provide possible solutions to improve their co-deposition with nickel.     

Constructing the time independent Hamiltonian from a time dependent one

In this paper we introduce a method for finding a time independent Hamiltonian of a given Hamiltonian dynamical system by canonoid transformation of canonical momenta. We find a condition that the system should satisfy to have an equivalent time independent formulation. We study the example of a damped harmonic oscillator and give the new time independent Hamiltonian for it, which has the property of tending to the standard Hamiltonian of the harmonic oscillator as damping goes to zero.      

Fluctuation of semiconductor surface potential in Si-SiO<Subscript>2</Subscript> structure after irradiation and subsequent annealing

Fluctuations of the semiconductor surface potential in a Si-SiO₂ structure, caused by irradiation with different high-energy particles (50 MeV electrons and 40 keV arsenic ions) and subsequent annealing, have been studied by measuring the semiconductor interface state parameters. It is established that the fluctuation of the semiconductor surface potential decreases slightly, from 0.049 V to 0.044 V, after irradiation, while a considerable increase is observed after annealing. For the samples irradiated by arsenic ions, the increase in fluctuation is much larger (0.096 V) than that for the electron-irradiated samples (0.06 V).     

Calculation of stopping power for partially stripped ions using an oscillator model

Collision of swift ions with atoms was considered in this paper. The projectile and target atoms were modeled as assemblies of quantum oscillators and it was assumed that both, target and projectile could be excited or ionized, without charge exchange. The model presented here is an extension of the one given by Sigmund and Haagerup [Phys. Rev. A 34, 892 (1986)]. The number of electrons bound to the projectile, as a function of the projectile velocity, was used from Cabrera-Trujillo et al. [Phys. Rev. A 55, 2864 (1997)]. Contributions to energy loss from excitation of the projectile and targets were separately considered. It has been found that projectile excitation contributes up to 20% to the total energy loss in the lower energy region. Comparisons with other authors, including SRIM 2003, are also given and good agreement was found.     

The matrix rate of return

In this paper we give definitions of matrix rates of return which do not depend on the choice of basis describing baskets. We give their economic interpretation. The matrix rate of return describes baskets of arbitrary type and extends portfolio analysis to the complex variable domain. This allows us for simultaneous analysis of evolution of baskets parameterized by complex variables in both continuous and discrete time models.